MMBFJ177 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBFJ177
Tipo de FET: JFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.225 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 2.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 300 Ohm
Encapsulados: SOT-23
Búsqueda de reemplazo de MMBFJ177 MOSFET
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MMBFJ177 datasheet
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf
J174 MMBFJ175 J175 MMBFJ176 J176 MMBFJ177 J177 G S S TO-92 D SOT-23 G D Mark 6W / 6X / 6Y NOTE Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 88. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units
mmbfj177lt1rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ177LT1/D JFET Chopper P Channel Depletion MMBFJ177LT1 2 SOURCE 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Drain Gate Voltage VDG 25 Vdc CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Reverse Gate Source Voltage VGS(r) 25 Vdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
mmbfj177lt1-d.pdf
MMBFJ177LT1G JFET Chopper P-Channel - Depletion Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 1 DRAIN Reverse Gate-Source Voltage VGS(r) -25 Vdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings
mmbfj175.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ175LT1/D JFET Chopper MMBFJ175LT1 P Channel Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Gate Voltage VDG 25 V Reverse Gate Source Voltage VGS(r) 25 V THERMAL CHARACTERISTICS Charact
Otros transistores... J107 , JFTJ105 , J174 , J175 , J176 , J177 , MMBFJ175 , MMBFJ176 , IRF3205 , J201 , J202 , MMBFJ201 , MMBFJ202 , J210 , MMBFJ210 , MMBFJ211 , MMBFJ212 .
History: 3SK224 | 3SK180-5 | 3SK290 | 2SK529 | DMN7022LFGQ | 3SK139Q | 3SK169P
History: 3SK224 | 3SK180-5 | 3SK290 | 2SK529 | DMN7022LFGQ | 3SK139Q | 3SK169P
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