MMBFJ177 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: MMBFJ177
Тип транзистора: JFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 0.225 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 0.02 A
Tjⓘ - Максимальная температура канала: 150 °C
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 300 Ohm
Тип корпуса: SOT-23
- подбор MOSFET транзистора по параметрам
MMBFJ177 Datasheet (PDF)
j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177.pdf

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units
mmbfj177lt1rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ177LT1/DJFET ChopperPChannel Depletion MMBFJ177LT12 SOURCE3GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainGate Voltage VDG 25 VdcCASE 31808, STYLE 10SOT23 (TO236AB)Reverse GateSource Voltage VGS(r) 25 VdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit
mmbfj177lt1-d.pdf

MMBFJ177LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliant2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc1 DRAINReverse Gate-Source Voltage VGS(r) -25 VdcStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings
mmbfj175.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1PChannel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 10SOT23 (TO236AB)DrainGate Voltage VDG 25 VReverse GateSource Voltage VGS(r) 25 VTHERMAL CHARACTERISTICSCharact
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: RU3013H | AP6P090H | CJP05N60B | PD5E8BA | SI9945DY | NCE6080K | STP40NF10L
History: RU3013H | AP6P090H | CJP05N60B | PD5E8BA | SI9945DY | NCE6080K | STP40NF10L



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