J201 Todos los transistores

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J201 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J201

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.625 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 1.5 V

Corriente continua de drenaje (Id): 0.001 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92

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J201 Datasheet (PDF)

1.1. lj2015-52.pdf Size:105K _upd

J201
J201

锦州辽晶电子科技有限公司 LJ2015-52 FD75C 型 NPN 硅功率达林顿晶体管 参数符号 测试条件 规范值 单位 P T =25℃ 75 W CM C 极 I 10 A CM 限 T 150 ℃ jm 值 T -55~150 ℃ stg V I =2mA ≥50 V (BR)CBO CB V I =2mA ≥50 V (BR)CEO CE I V =20V ≤2 mA CBO CB 直 I V =20V ≤2 mA CEO EB 流 参 V ≤2.5 V BEsat 数 I =5A C I =0.5A B

1.2. cj201nl.pdf Size:151K _upd

J201

 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT–23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications

 1.3. 2sj201.pdf Size:268K _toshiba

J201
J201

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC ? Gate-source voltage

1.4. j201 j202 mmbfj201 mmbfj202 mmbfj203.pdf Size:783K _fairchild_semi

J201
J201

January 2008 J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. TO-92 SOT-23 3 2 Marking Marking J201 MMBFJ201 : 62P J202 MMBFJ202 : 62Q 1 1 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute Maximu

 1.5. j201.pdf Size:851K _fairchild_semi

J201
J201

J201 MMBFJ201 J202 MMBFJ202 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 62P / 62Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Units

1.6. j201 j202 j204c sst201 sst202 sst204c.pdf Size:78K _vishay

J201
J201

J/SST201 Series Vishay Siliconix N-Channel JFETs J201 SST201 J202 SST202 J204 SST204 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 -0.3 to -1.5 -40 0.5 0.2 J/SST202 -0.8 to -4 -40 1 0.9 J/SST204 -0.3 to -2 -25 0.5 0.2 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage: J201 <1.5 V D Full Performance from Low Voltage D High-Gain, Low-Noi

1.7. j201 j202 j203 j204 sst201 sst202 sst203 sst204.pdf Size:22K _calogic

J201

N-Channel JFET General Purpose Amplifier CORPORATION J201 – J204 / SST201 – SST204 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) • High Input Impedance • • Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V • Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range

Otros transistores... JFTJ105 , J174 , J175 , J176 , J177 , MMBFJ175 , MMBFJ176 , MMBFJ177 , IRF740 , J202 , MMBFJ201 , MMBFJ202 , J210 , MMBFJ210 , MMBFJ211 , MMBFJ212 , J270 .

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