January 2008J201 - J202 / MMBFJ201 - MMBFJ203N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.TO-92 SOT-2332MarkingMarking J201MMBFJ201 : 62PJ202MMBFJ202 : 62Q1 11. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute

J201 MMBFJ201J202 MMBFJ202GSTO-92GS SOT-23 NOTE: Source & DrainDD are interchangeableMark: 62P / 62QN-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 52.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Uni

J/SST201 Series Vishay SiliconixN-Channel JFETsJ201 SST201J202 SST202J204 SST204PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J/SST201 -0.3 to -1.5 -40 0.5 0.2J/SST202 -0.8 to -4 -40 1 0.9J/SST204 -0.3 to -2 -25 0.5 0.2FEATURES BENEFITS APPLICATIONSD Low Cutoff Voltage: J201

N-Channel JFETGeneral Purpose AmplifierCORPORATIONJ201 J204 / SST201 SST204FEATURES ABSOLUTE MAXIMUM RATINGS(TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40VGate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mAStorage Temperature Range

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -200 VJEDEC Gate-source voltag

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications

LJ2015-52FD75C NPN P T =25 75 WCM CI 10 ACMT 150 jmT -55~150 stgV I 2mA 50 V(BR)CBO CBV I 2mA 50 V(BR)CEO CEI V =20V 2 mACBO CBI V =20V 2 mACEO EBV 2.5 VBEsatI =5ACI =0.5AB

LJ2015-53CS7456DP N P T =25 1.9 WD AI V =10V,T =25 5.7 AD GS AI 40 ADMV 20 VGST +150 jmT -55 +150 stgR 65thJA /WR 1.8thJCBV V =0V,I =0.25mA 100 VDSS GS DV =10V,I =9.3A 0.025