J201 - описание и поиск аналогов

January 2008 J201 - J202 / MMBFJ201 - MMBFJ203 N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. TO-92 SOT-23 3 2 Marking Marking J201 MMBFJ201 62P J202 MMBFJ202 62Q 1 1 1. Drain 2. Source 3. Gate 1. Drain 2. Source 3. Gate Absolute

J201 MMBFJ201 J202 MMBFJ202 G S TO-92 G S SOT-23 NOTE Source & Drain D D are interchangeable Mark 62P / 62Q N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Uni

J/SST201 Series Vishay Siliconix N-Channel JFETs J201 SST201 J202 SST202 J204 SST204 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J/SST201 -0.3 to -1.5 -40 0.5 0.2 J/SST202 -0.8 to -4 -40 1 0.9 J/SST204 -0.3 to -2 -25 0.5 0.2 FEATURES BENEFITS APPLICATIONS D Low Cutoff Voltage J201

N-Channel JFET General Purpose Amplifier CORPORATION J201 J204 / SST201 SST204 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) High Input Impedance Low IGSS Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -40V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range

2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ201 High-Power Amplifier Application Unit mm High breakdown voltage VDSS = -200 V High forward transfer admittance Yfs = 5.0 S (typ.) Complementary to 2SK1530 Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -200 V JEDEC Gate-source voltag

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors CJ201NL TRANSISTOR (NPN) SOT 23 FEATURES High Collector Current Capability Low Collector-emitter Saturation Voltage High Efficiency Leading to Less Heat Generation 1. BASE Reduced PCB Requirements 2. EMITTER Alternatived Effectively to MOSFETS in Specific Applications

LJ2015-52 FD75C NPN P T =25 75 W CM C I 10 A CM T 150 jm T -55 150 stg V I 2mA 50 V (BR)CBO CB V I 2mA 50 V (BR)CEO CE I V =20V 2 mA CBO CB I V =20V 2 mA CEO EB V 2.5 V BEsat I =5A C I =0.5A B

LJ2015-53 CS7456DP N P T =25 1.9 W D A I V =10V,T =25 5.7 A D GS A I 40 A DM V 20 V GS T +150 jm T -55 +150 stg R 65 thJA /W R 1.8 thJC BV V =0V,I =0.25mA 100 V DSS GS D V =10V,I =9.3A 0.025