J304 Todos los transistores

J304 N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50. TO-92 1 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25 C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V

J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain J304, D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB (typ) @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYM

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit mm 1.8-V drive Low ON-resistance RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25 C) Character

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L - -MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 80 m (typ.) DS (ON) High forward transfer admittance Y = 8.0 S (typ.) fs Low leakage current IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE

isc Silicon NPN Darlington Power Transistor MJ3041 DESCRIPTION High DC Current Gain Low Collector-Emitter Saturation Voltage 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated amplifier series pass and switching regulator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE