J304 Todos los transistores

 

J304 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J304

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 6 V

Corriente continua de drenaje (Id): 0.015 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92

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J304 Datasheet (PDF)

1.1. buj304ax 2.pdf Size:57K _philips

J304
J304

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL

1.2. buj304a 2.pdf Size:54K _philips

J304
J304

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CO

 1.3. 2sj304.pdf Size:379K _toshiba

J304
J304

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L -?-MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m? (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 µA (max) (V = -60 V) DS Enhancement-mode

1.4. ssm3j304t 100126.pdf Size:243K _toshiba

J304
J304

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T 0 Power Management Switch Applications 0 High-Speed Switching Applications Unit: mm • 1.8-V drive • Low ON-resistance: RDS(ON) = 297 m? (max) (@VGS = -1.8 V) RDS(ON) = 168 m? (max) (@VGS = -2.5 V) RDS(ON) = 127 m? (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25?C) Characteristic Symbo

 1.5. j304.pdf Size:26K _fairchild_semi

J304
J304

J304 N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50. TO-92 1 1. Drain 2. Source 3. Gate NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forw

1.6. j304 j305.pdf Size:77K _vishay

J304
J304

J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: J304, D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB (typ) @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise: 3.

1.7. mj3042.pdf Size:195K _inchange_semiconductor

J304
J304

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 250 (Min) @ IC =2.5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONS ·Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE MA

1.8. mj3040.pdf Size:195K _inchange_semiconductor

J304
J304

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 100 (Min) @ IC =2.5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS ·Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE MA

1.9. mj3041.pdf Size:195K _inchange_semiconductor

J304
J304

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3041 DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 250 (Min) @ IC =2.5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONS ·Developed for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE MA

Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .

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