J304 Datasheet and Replacement

J304N-Channel RF Amplifier This device is designed for electronic switching applications such as low ON resistance analog switching. Sourced from process 50.TO-9211. Drain 2. Source 3. GateNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings* TC=25C unless otherwise noted Symbol Parameter Ratings UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 V

J304/305Vishay SiliconixN-Channel JFETsPRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J304 -2 to -6 -30 4.5 5J305 -0.5 to -3 -30 3 1FEATURES BENEFITS APPLICATIONSD Excellent High Frequency Gain: J304, D Wideband High Gain D High-Frequency Amplifier/MixerGps 11 dB (typ) @ 400 MHzD Very High System Sensitivity D OscillatorD Very Low Noise:

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for usein high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor controlsystems, etc.QUICK REFERENCE DATASYMBOL PARAMETER

Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304AX GENERAL DESCRIPTIONHigh-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intendedfor use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motorcontrol systems, etc.QUICK REFERENCE DATASYM

SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T Power Management Switch Applications High-Speed Switching Applications Unit: mm 1.8-V drive Low ON-resistance: RDS(ON) = 297 m (max) (@VGS = -1.8 V) RDS(ON) = 168 m (max) (@VGS = -2.5 V) RDS(ON) = 127 m (max) (@VGS = -4.0 V) Absolute Maximum Ratings (Ta = 25C) Character

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3042 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 250 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=350V(Min) APPLICATIONSDeveloped for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE

isc Silicon NPN Darlington Power Transistor MJ3041DESCRIPTIONHigh DC Current GainLow Collector-Emitter Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated amplifier series passand switching regulator applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor MJ3040 DESCRIPTION Built-in Base-Emitter Shunt Resistors High DC current gain- hFE = 100 (Min) @ IC =2.5A Collector-Emitter Sustaining Voltage- VCEO(SUS)=300V(Min) APPLICATIONSDeveloped for line operated amplifier, series pass and Switching regulator applications. ABSOLUTE