J305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: J305

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 3 V

Corriente continua de drenaje (Id): 0.008 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: TO-92

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J305 Datasheet (PDF)

1.1. mj3055.pdf Size:11K _upd

MJ3055 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

1.2. mmbfj305.pdf Size:120K _update_mosfet

July 2011 MMBFJ305 N-Channel RF Amplifier SOT-23 Features G • This device is designed primarily for electronic switching S applications such as low On Resistance analog switching. Marking : 6Q • Sourced from process 50. D Note : Drain & Source are interchangeable. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage

1.3. ssm3j305t 071101.pdf Size:173K _toshiba

SSM3J305T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J305T High-Speed Switching Applications Unit: mm • 4 V drive • Low ON-resistance: Ron = 477 m? (max) (@VGS = -4 V) Ron = 237 m? (max) (@VGS = -10 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain–source voltage VDS -30 V Gate–source voltage VGSS ± 20 V DC ID -1.7

1.4. 2sj305.pdf Size:335K _toshiba

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications • High input impedance • Low gate threshold voltage.: V = -0.5~-1.5 V th • Excellent switching times.: t = 0.06 µs (typ.) on t = 0.15 µs (typ.) off • Low drain-source ON resistance: R = 2.4 ? (typ.) DS (ON) • Small package

1.5. j305.pdf Size:91K _fairchild_semi

September 2007 J305 N-Channel RF Amplifier � This device is designed primarily for electronic switching applications such as low on resistance analog switching. � Sourced from process 50. TO-92 1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings* Ta=25�C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Curr

1.6. j304 j305.pdf Size:77K _vishay

J304/305 Vishay Siliconix N-Channel JFETs PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J304 -2 to -6 -30 4.5 5 J305 -0.5 to -3 -30 3 1 FEATURES BENEFITS APPLICATIONS D Excellent High Frequency Gain: J304, D Wideband High Gain D High-Frequency Amplifier/Mixer Gps 11 dB (typ) @ 400 MHz D Very High System Sensitivity D Oscillator D Very Low Noise: 3.

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