MMBF4119 Todos los transistores

 

MMBF4119 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBF4119
   Código: 61A_61E
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.6 V
   Paquete / Cubierta: SOT-23

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MMBF4119 Datasheet (PDF)

 ..1. Size:128K  fairchild semi
pn4117 pn4118 pn4119 mmbf4117 mmbf4118 mmbf4119.pdf

MMBF4119
MMBF4119

PN4117 MMBF4117PN4118 MMBF4118PN4119 MMBF4119GSG TO-92SSOT-23 DDMark: 61A / 61C / 61ENOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low current DC and audio applications.These devices provide excellent performance as input stages forsub-picoamp instrumentation or any high impedance signalsources. Sourced from Process 53.Abso

 9.1. Size:51K  1
mmbf4860.pdf

MMBF4119
MMBF4119

 9.2. Size:292K  motorola
mmbf4416lt1rev0d.pdf

MMBF4119
MMBF4119

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4416LT1/DJFETMMBF4416LT1VHF/UHF Amplifier TransistorNChannelMotorola Preferred Device2 SOURCE3GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 10DrainSource Voltage VDS 30 VdcSOT23 (TO236AB)DrainGate Voltage VDG 30 VdcGateSource Voltage VGS 30 Vdc

 9.3. Size:139K  motorola
mmbf4391lt1 mmbf4392lt1 mmbf4393lt1.pdf

MMBF4119
MMBF4119

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4391LT1/DMMBF4391LT1JFET Switching TransistorsMMBF4392LT1NChannel2 SOURCEMMBF4393LT13GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDS 30 VdcCASE 31808, STYLE 10DrainGate Voltage VDG 30 VdcSOT23 (TO236AB)GateSource Voltage VGS 30 VdcForward

 9.4. Size:49K  fairchild semi
mmbf4416a.pdf

MMBF4119
MMBF4119

March 2005MMBF4416AN-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50.GSSOT-23DMark: 6BGAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 35 VVGS Gate-Source Voltage -35 VIGF Forward Gate Current 10 mATJ, TSTG Operating and Storage Junction Temperature Range - 5

 9.5. Size:708K  fairchild semi
pn4391 pn4392 pn4393 mmbf4391 mmbf4392 mmbf4393.pdf

MMBF4119
MMBF4119

PN4391 MMBF4391PN4392 MMBF4392PN4393 MMBF4393GSG TO-92SSOT-23 DDMark: 6J / 6K / 6GNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabalized amplifiers. Sourcedfrom Process 51. See J111 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise noted

 9.6. Size:55K  fairchild semi
pn4091 pn4092 pn4093 mmbf4091 mmbf4092 mmbf4093.pdf

MMBF4119
MMBF4119

PN4091 MMBF4091PN4092 MMBF4092PN4093 MMBF4093GDG TO-92S SSOT-23DMark: 61J / 61K / 61LNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabalized amplifiers. Sourcedfrom Process 51. See J111 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise no

 9.7. Size:100K  fairchild semi
mmbf4416.pdf

MMBF4119
MMBF4119

April 2009MMBF4416N-Channel RF Amplifiers This device is designed for RF amplifiers.G Sourced from process 50.SSOT-23DMark: 6AAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mATJ, TSTG Junction and Storage Temperature Range -55 to +150 C

 9.8. Size:279K  onsemi
mmbf4391 mmbf4392 mmbf4393.pdf

MMBF4119
MMBF4119

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.9. Size:127K  onsemi
mmbf4391lt1 mmbf4392lt1g mmbf4393lt1g.pdf

MMBF4119
MMBF4119

MMBF4391LT1G,MMBF4392LT1G,MMBF4393LT1GJFET Switching TransistorsN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGS1 DRAINRating Symbol Value UnitDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc3Gate-Source Voltage VGS 30 Vdc1Forward Gate Current IG(f) 50 mAdc

 9.10. Size:149K  onsemi
mmbf4416lt1.pdf

MMBF4119
MMBF4119

MMBF4416LT1Preferred Device JFET VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc1 DRAINGate-Source Voltage VGS 30 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS3SOT-23 (TO-236)Characteristic Sym

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