MMBF4416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBF4416A
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.225 W
Voltaje máximo drenador - fuente |Vds|: 35 V
Voltaje máximo fuente - puerta |Vgs|: 5.5 V
Corriente continua de drenaje |Id|: 0.015 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 2.5 V
Paquete / Cubierta: SOT-23
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MMBF4416A Datasheet (PDF)
mmbf4416a.pdf
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March 2005MMBF4416AN-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50.GSSOT-23DMark: 6BGAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 35 VVGS Gate-Source Voltage -35 VIGF Forward Gate Current 10 mATJ, TSTG Operating and Storage Junction Temperature Range - 5
mmbf4416lt1rev0d.pdf
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4416LT1/DJFETMMBF4416LT1VHF/UHF Amplifier TransistorNChannelMotorola Preferred Device2 SOURCE3GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 10DrainSource Voltage VDS 30 VdcSOT23 (TO236AB)DrainGate Voltage VDG 30 VdcGateSource Voltage VGS 30 Vdc
mmbf4416.pdf
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April 2009MMBF4416N-Channel RF Amplifiers This device is designed for RF amplifiers.G Sourced from process 50.SSOT-23DMark: 6AAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mATJ, TSTG Junction and Storage Temperature Range -55 to +150 C
mmbf4416lt1.pdf
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MMBF4416LT1Preferred Device JFET VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc1 DRAINGate-Source Voltage VGS 30 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS3SOT-23 (TO-236)Characteristic Sym
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