MMBF4416A Todos los transistores

 ..1. Size:49K  fairchild semi
 mmbf4416a.pdf

March 2005 MMBF4416A N-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50. G S SOT-23 D Mark 6BG Absolute Maximum Ratings* Ta = 25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 10 mA TJ, TSTG Operating and Storage Junction Temperature Range - 5

 6.1. Size:292K  motorola
 mmbf4416lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF4416LT1/D JFET MMBF4416LT1 VHF/UHF Amplifier Transistor N Channel Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 10 Drain Source Voltage VDS 30 Vdc SOT 23 (TO 236AB) Drain Gate Voltage VDG 30 Vdc Gate Source Voltage VGS 30 Vdc

 6.2. Size:100K  fairchild semi
 mmbf4416.pdf

April 2009 MMBF4416 N-Channel RF Amplifiers This device is designed for RF amplifiers. G Sourced from process 50. S SOT-23 D Mark 6A Absolute Maximum Ratings TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 30 V VGS Gate-Source Voltage -30 V IGF Forward Gate Current 10 mA TJ, TSTG Junction and Storage Temperature Range -55 to +150 C

 6.3. Size:149K  onsemi
 mmbf4416lt1.pdf

MMBF4416LT1 Preferred Device JFET VHF/UHF Amplifier Transistor N-Channel http //onsemi.com Features Pb-Free Package is Available 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Source Voltage VDS 30 Vdc Drain-Gate Voltage VDG 30 Vdc 1 DRAIN Gate-Source Voltage VGS 30 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Characteristic Sym