MMBF4416A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBF4416A
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 35 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 5.5 V
   |Id|ⓘ - Corriente continua de drenaje: 0.015 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 2.5 V
Paquete / Cubierta: SOT-23

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MMBF4416A Datasheet (PDF)

..1. Size:49K fairchild semi
mmbf4416a.pdf

March 2005MMBF4416AN-Channel RF Amplifier This device is designed for RF amplifiers. Sourced from process 50.GSSOT-23DMark: 6BGAbsolute Maximum Ratings* Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 35 VVGS Gate-Source Voltage -35 VIGF Forward Gate Current 10 mATJ, TSTG Operating and Storage Junction Temperature Range - 5

6.1. Size:292K motorola
mmbf4416lt1rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF4416LT1/DJFETMMBF4416LT1VHF/UHF Amplifier TransistorNChannelMotorola Preferred Device2 SOURCE3GATE31 DRAIN1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 10DrainSource Voltage VDS 30 VdcSOT23 (TO236AB)DrainGate Voltage VDG 30 VdcGateSource Voltage VGS 30 Vdc

6.2. Size:100K fairchild semi
mmbf4416.pdf

April 2009MMBF4416N-Channel RF Amplifiers This device is designed for RF amplifiers.G Sourced from process 50.SSOT-23DMark: 6AAbsolute Maximum Ratings TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 30 VVGS Gate-Source Voltage -30 VIGF Forward Gate Current 10 mATJ, TSTG Junction and Storage Temperature Range -55 to +150 C

6.3. Size:149K onsemi
mmbf4416lt1.pdf

MMBF4416LT1Preferred Device JFET VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Source Voltage VDS 30 VdcDrain-Gate Voltage VDG 30 Vdc1 DRAINGate-Source Voltage VGS 30 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS3SOT-23 (TO-236)Characteristic Sym

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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