MMBF5103 Datasheet. Equivalente

 ..1. Size:79K  fairchild semi
 mmbf5103.pdf

MMBF5103 N-Channel Switch G This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics. S SOT-23 D Mark 66A 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Ga

 9.1. Size:294K  motorola
 mmbf5484lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5484LT1/D JFET Transistor N Channel MMBF5484LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Drain Gate Voltage VDG 25 Vdc Reverse Gate Source Voltage VGS(r) 25 Vdc CASE 318 08, STYLE 10 Forward Gate Current IG(f) 10 mAdc SOT 23 (TO 236AB) Contin

 9.2. Size:103K  motorola
 mmbf5457lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5457LT1/D JFET General Purpose MMBF5457LT1 Transistor N Channel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 10 SOT 23 (TO 236AB) Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Reverse Gate Source Voltage VGS(r) 25 Vdc Gate Current IG 10

 9.3. Size:357K  fairchild semi
 2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf

February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007

 9.4. Size:129K  fairchild semi
 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE Source & Drain D D are interchangeable Mark 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S

 9.5. Size:754K  fairchild semi
 2n5484 mmbf5484.pdf

2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark 6B / 6M / 6H NOTE Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value

 9.6. Size:114K  fairchild semi
 2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf

2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE Source & Drain S Mark 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25 C unless otherwise noted -

 9.7. Size:73K  fairchild semi
 mmbf5434.pdf

MMBF5434 N-Channel Switch This device is designed for digital switching 3 applications where very low on resistance is mandatory. Sourced from Process 58. 2 SuperSOT-3 1 Marking 61Z 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gat

 9.8. Size:148K  onsemi
 mmbf5484lt1.pdf

MMBF5484LT1 Preferred Device JFET Transistor N-Channel Features Pb-Free Package is Available http //onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 3 GATE Reverse Gate-Source Voltage VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below PD 1 DRAIN TC = 25 C 200 mW Linear Derating Factor 2.8 m

 9.9. Size:60K  onsemi
 mmbf5460lt1-d.pdf

MMBF5460LT1 JFET - General Purpose Transistor P-Channel http //onsemi.com Features Pb-Free Package is Available 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc 1 DRAIN Forward Gate Current IGF 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR-5 Board,

 9.10. Size:55K  onsemi
 mmbf5457lt1-d.pdf

MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N-Channel http //onsemi.com Features Pb-Free Package is Available 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGS(r) -25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Charac