MMBF5103 Todos los transistores

 

MMBF5103 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBF5103

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 2.7 V

Corriente continua de drenaje (Id): 0.04 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: SOT-23

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MMBF5103 Datasheet (PDF)

1.1. mmbf5103.pdf Size:79K _fairchild_semi

MMBF5103
MMBF5103

MMBF5103 N-Channel Switch G This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics. S SOT-23 D Mark: 66A 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Gate-Source

5.1. mmbf5457lt1rev0d.pdf Size:103K _motorola

MMBF5103
MMBF5103

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5457LT1/D JFET General Purpose MMBF5457LT1 Transistor NChannel 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 31808, STYLE 10 SOT23 (TO236AB) DrainSource Voltage VDS 25 Vdc DrainGate Voltage VDG 25 Vdc Reverse GateSource Voltage VGS(r) 25 Vdc Gate Current IG 10 mAdc THERMAL CH

5.2. mmbf5484lt1rev0d.pdf Size:294K _motorola

MMBF5103
MMBF5103

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5484LT1/D JFET Transistor NChannel MMBF5484LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 DrainGate Voltage VDG 25 Vdc Reverse GateSource Voltage VGS(r) 25 Vdc CASE 31808, STYLE 10 Forward Gate Current IG(f) 10 mAdc SOT23 (TO236AB) Continuous Device Dis

 5.3. 2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf Size:357K _fairchild_semi

MMBF5103
MMBF5103

February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007 Fairchild Se

5.4. 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf Size:129K _fairchild_semi

MMBF5103
MMBF5103

2N5457 MMBF5457 2N5458 MMBF5458 2N5459 MMBF5459 G S TO-92 G S SOT-23 NOTE: Source & Drain D D are interchangeable Mark: 6D / 61S / 6L N-Channel General Purpose Amplifier This device is a low level audio amplifier and switching transistors, and can be used for analog switching applications. Sourced from Process 55. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbo

 5.5. mmbf5484.pdf Size:754K _fairchild_semi

MMBF5103
MMBF5103

2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25C unless otherwise noted Symbol Parameter Value Uni

5.6. mmbf5434.pdf Size:73K _fairchild_semi

MMBF5103
MMBF5103

MMBF5434 N-Channel Switch This device is designed for digital switching 3 applications where very low on resistance is mandatory. Sourced from Process 58. 2 SuperSOT-3 1 Marking: 61Z 1. Drain 2. Source 3. Gate Absolute Maximum Ratings * TA=25C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 25 V VGS Gate-Source Voltage -25 V IGF Forward Gate Curren

5.7. 2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf Size:114K _fairchild_semi

MMBF5103
MMBF5103

2N5460 MMBF5460 2N5461 MMBF5461 2N5462 MMBF5462 G S G TO-92 D SOT-23 NOTE: Source & Drain S Mark: 6E / 61U / 61V are interchangeable D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89. Absolute Maximum Ratings* TA = 25C unless otherwise noted - Sym

5.8. mmbf5460lt1-d.pdf Size:60K _onsemi

MMBF5103
MMBF5103

MMBF5460LT1 JFET - General Purpose Transistor P-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE MAXIMUM RATINGS 3 Rating Symbol Value Unit GATE Drain-Gate Voltage VDG 40 Vdc Reverse Gate-Source Voltage VGSR 40 Vdc 1 DRAIN Forward Gate Current IGF 10 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit 3 Total Device Dissipation FR-5 Board, PD 1

5.9. mmbf5457lt1-d.pdf Size:55K _onsemi

MMBF5103
MMBF5103

MMBF5457LT1 Preferred Device JFET - General Purpose Transistor N-Channel http://onsemi.com Features Pb-Free Package is Available 2 SOURCE 3 MAXIMUM RATINGS GATE Rating Symbol Value Unit Drain-Source Voltage VDS 25 Vdc 1 DRAIN Drain-Gate Voltage VDG 25 Vdc Reverse Gate-Source Voltage VGS(r) -25 Vdc Gate Current IG 10 mAdc THERMAL CHARACTERISTICS 3 SOT-23 (TO-236) Characteris

5.10. mmbf5484lt1.pdf Size:148K _onsemi

MMBF5103
MMBF5103

MMBF5484LT1 Preferred Device JFET Transistor N-Channel Features Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 3 GATE Reverse Gate-Source Voltage VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below PD 1 DRAIN TC = 25C 200 mW Linear Derating Factor 2.8 mW/C

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