MMBF5103 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MMBF5103
Тип транзистора: JFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.35 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 2.7 V
Минимальное напряжение отсечки |Vgs(off)|: 1.2 V
Максимально допустимый постоянный ток стока |Id|: 0.04 A
Максимальная температура канала (Tj): 150 °C
Тип корпуса: SOT-23
MMBF5103 Datasheet (PDF)
mmbf5103.pdf
MMBF5103N-Channel SwitchG This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics.SSOT-23DMark: 66A1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 40 VVGS Ga
mmbf5484lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5484LT1/DJFET TransistorN ChannelMMBF5484LT12 SOURCEMotorola Preferred Device3GATE1 DRAIN3MAXIMUM RATINGSRati
mmbf5457lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorN Channel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating S
2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf
February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007
2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf
2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS
2n5484 mmbf5484.pdf
2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value
2n5460 2n5461 2n5462 mmbf5460 mmbf5461 mmbf5462.pdf
2N5460 MMBF54602N5461 MMBF54612N5462 MMBF5462GSG TO-92 DSOT-23NOTE: Source & DrainSMark: 6E / 61U / 61V are interchangeableDP-Channel General Purpose AmplifierThis device is designed primarily for low level audio and generalpurpose applications with high impedance signal sources. Sourcedfrom Process 89.Absolute Maximum Ratings* TA = 25C unless otherwise noted-
mmbf5434.pdf
MMBF5434N-Channel Switch This device is designed for digital switching 3applications where very low on resistance is mandatory. Sourced from Process 58.2SuperSOT-31Marking: 61Z1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -25 VIGF Forward Gat
mmbf5484lt1.pdf
MMBF5484LT1Preferred Device JFET TransistorN-ChannelFeatures Pb-Free Package is Availablehttp://onsemi.comMAXIMUM RATINGS2 SOURCERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc3GATEReverse Gate-Source Voltage VGS(r) 25 VdcForward Gate Current IG(f) 10 mAdcContinuous Device Dissipation at or Below PD1 DRAINTC = 25C 200 mWLinear Derating Factor 2.8 m
mmbf5460lt1-d.pdf
MMBF5460LT1JFET - General PurposeTransistorP-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Gate Voltage VDG 40 VdcReverse Gate-Source Voltage VGSR 40 Vdc1 DRAINForward Gate Current IGF 10 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit3Total Device Dissipation FR-5 Board,
mmbf5457lt1-d.pdf
MMBF5457LT1Preferred Device JFET - General Purpose TransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Source Voltage VDS 25 Vdc1 DRAINDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGS(r) -25 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS 3SOT-23 (TO-236)Charac
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