MMBF5485 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMBF5485
   Código: 6M
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.225 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
   |Id|ⓘ - Corriente continua de drenaje: 0.01 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 2 pF
Paquete / Cubierta: SOT-23

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MMBF5485 Datasheet (PDF)

..1. Size:357K fairchild semi
2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf

February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007

7.1. Size:294K motorola
mmbf5484lt1rev0d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5484LT1/DJFET TransistorNChannelMMBF5484LT12 SOURCEMotorola Preferred Device3GATE1 DRAIN3MAXIMUM RATINGSRating Symbol Value Unit12DrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcCASE 31808, STYLE 10Forward Gate Current IG(f) 10 mAdcSOT23 (TO236AB)Contin

7.2. Size:754K fairchild semi
2n5484 mmbf5484.pdf

2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value

7.3. Size:148K onsemi
mmbf5484lt1.pdf

MMBF5484LT1Preferred Device JFET TransistorN-ChannelFeatures Pb-Free Package is Availablehttp://onsemi.comMAXIMUM RATINGS2 SOURCERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc3GATEReverse Gate-Source Voltage VGS(r) 25 VdcForward Gate Current IG(f) 10 mAdcContinuous Device Dissipation at or Below PD1 DRAINTC = 25C 200 mWLinear Derating Factor 2.8 m

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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