MMBF5485 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBF5485
Código: 6M
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.225 W
Voltaje máximo drenador - fuente |Vds|: 25 V
Voltaje máximo fuente - puerta |Vgs|: 4 V
Corriente continua de drenaje |Id|: 0.01 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Conductancia de drenaje-sustrato (Cd): 2 pF
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET MMBF5485
MMBF5485 Datasheet (PDF)
2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf
February 20092N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007
mmbf5484lt1rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5484LT1/DJFET TransistorNChannelMMBF5484LT12 SOURCEMotorola Preferred Device3GATE1 DRAIN3MAXIMUM RATINGSRating Symbol Value Unit12DrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcCASE 31808, STYLE 10Forward Gate Current IG(f) 10 mAdcSOT23 (TO236AB)Contin
2n5484 mmbf5484.pdf
2N5484 MMBF54842N5485 MMBF54852N5486 MMBF5486GSG TO-92SSOT-23 DDMark: 6B / 6M / 6HNOTE: Source & Drain are interchangeableN-Channel RF AmplifierThis device is designed primarily for electronic switchingapplications such as low On Resistance analog switching.Sourced from Process 50.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value
mmbf5484lt1.pdf
MMBF5484LT1Preferred Device JFET TransistorN-ChannelFeatures Pb-Free Package is Availablehttp://onsemi.comMAXIMUM RATINGS2 SOURCERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc3GATEReverse Gate-Source Voltage VGS(r) 25 VdcForward Gate Current IG(f) 10 mAdcContinuous Device Dissipation at or Below PD1 DRAINTC = 25C 200 mWLinear Derating Factor 2.8 m
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
