MMBF5486 Todos los transistores

 ..1. Size:357K  fairchild semi
 2n5484 2n5485 2n5486 mmbf5484 mmbf5485 mmbf5486.pdf

February 2009 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N5484/5485/5486 MMBF5484/5485/5486 Rev. 1.0.0 1 2N5484/5485/5486 MMBF5484/5485/5486 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 2 2007 Fairchild Semiconductor Corporation www.fairchildsemi.com Rev. 1.0.0 3 2007

 7.1. Size:294K  motorola
 mmbf5484lt1rev0d.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBF5484LT1/D JFET Transistor N Channel MMBF5484LT1 2 SOURCE Motorola Preferred Device 3 GATE 1 DRAIN 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Drain Gate Voltage VDG 25 Vdc Reverse Gate Source Voltage VGS(r) 25 Vdc CASE 318 08, STYLE 10 Forward Gate Current IG(f) 10 mAdc SOT 23 (TO 236AB) Contin

 7.2. Size:754K  fairchild semi
 2n5484 mmbf5484.pdf

2N5484 MMBF5484 2N5485 MMBF5485 2N5486 MMBF5486 G S G TO-92 S SOT-23 D D Mark 6B / 6M / 6H NOTE Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching applications such as low On Resistance analog switching. Sourced from Process 50. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value

 7.3. Size:148K  onsemi
 mmbf5484lt1.pdf

MMBF5484LT1 Preferred Device JFET Transistor N-Channel Features Pb-Free Package is Available http //onsemi.com MAXIMUM RATINGS 2 SOURCE Rating Symbol Value Unit Drain-Gate Voltage VDG 25 Vdc 3 GATE Reverse Gate-Source Voltage VGS(r) 25 Vdc Forward Gate Current IG(f) 10 mAdc Continuous Device Dissipation at or Below PD 1 DRAIN TC = 25 C 200 mW Linear Derating Factor 2.8 m