MMBFJ309 Todos los transistores

 

MMBFJ309 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMBFJ309

Código: 6U

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.35 W

Tensión drenaje-fuente (Vds): 25 V

Tensión compuerta-fuente (Vgs): 4 V

Corriente continua de drenaje (Id): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: SOT-23

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MMBFJ309 Datasheet (PDF)

1.1. mmbfj309 mmbfj310.pdf Size:165K _motorola

MMBFJ309
MMBFJ309

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBFJ309LT1/D JFET VHF/UHF Amplifier Transistor MMBFJ309LT1 NChannel 2 SOURCE MMBFJ310LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit DrainSource Voltage VDS 25 Vdc CASE 31808, STYLE 10 GateSource Voltage VGS 25 Vdc SOT23 (TO236AB) Gate Current IG 10 mAdc THERMAL CHARACTERISTICS Characteristi

1.2. j309 j310 mmbfj309 mmbfj310.pdf Size:207K _fairchild_semi

MMBFJ309
MMBFJ309

December 2010 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable. J309 MMBFJ309 J310 MMBFJ310 G S SOT-23 G TO-92 Mark MMBFJ309 : 6U S D

 1.3. mmbfj309lt1 mmbfj310lt1.pdf Size:144K _onsemi

MMBFJ309
MMBFJ309

MMBFJ309LT1G, MMBFJ310LT1G JFET - VHF/UHF Amplifier Transistor N-Channel http://onsemi.com Features 2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit 1 DRAIN Drain-Source Voltage VDS 25 Vdc Gate-Source Voltage VGS 25 Vdc Gate Current IG 10 mAdc 3 SOT-23 (TO-236) THERMAL CHARACTERISTICS CASE 318 1

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