Справочник MOSFET. MMBFJ309

 

MMBFJ309 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MMBFJ309
   Тип транзистора: JFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.35 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 25 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.03 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Тип корпуса: SOT-23
     - подбор MOSFET транзистора по параметрам

 

MMBFJ309 Datasheet (PDF)

 ..1. Size:165K  motorola
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MMBFJ309

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ309LT1/DJFET VHF/UHF Amplifier TransistorMMBFJ309LT1NChannel2 SOURCEMMBFJ310LT13GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainSource Voltage VDS 25 VdcCASE 31808, STYLE 10GateSource Voltage VGS 25 Vdc SOT23 (TO236AB)Gate Current IG 10 mAdcTHERMAL CHARACTERISTICS

 ..2. Size:207K  fairchild semi
j309 j310 mmbfj309 mmbfj310.pdfpdf_icon

MMBFJ309

December 2010J309 / J310 / MMBFJ309 / MMBFJ310N-Channel RF AmplifierFeatures This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92. Source & Drain are interchangeable.J309 MMBFJ309J310 MMBFJ310GSSOT-23G TO-92 Mark MMBFJ309

 0.1. Size:144K  onsemi
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MMBFJ309

MMBFJ309LT1G,MMBFJ310LT1GJFET - VHF/UHF AmplifierTransistorN-Channelhttp://onsemi.comFeatures2 SOURCE These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant3GATEMAXIMUM RATINGSRating Symbol Value Unit1 DRAINDrain-Source Voltage VDS 25 VdcGate-Source Voltage VGS 25 VdcGate Current IG 10 mAdc3SOT-23 (TO-236)THERMAL CHARACTERISTICS CASE 31

 7.1. Size:120K  fairchild semi
mmbfj305.pdfpdf_icon

MMBFJ309

July 2011MMBFJ305N-Channel RF AmplifierSOT-23FeaturesG This device is designed primarily for electronic switchingS applications such as low On Resistance analog switching.Marking : 6Q Sourced from process 50.DNote : Drain & Source are interchangeable.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP9468GH | DM616 | 2SK3572-Z | PSMN040-200W | DMP6185SEQ | ME7170-G | AP6N023H

 

 
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