PF5102 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PF5102
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 1.6 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Paquete / Cubierta: TO-92
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PF5102 Datasheet (PDF)
pf5102.pdf

PF5102N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabized amplifiers. Sourced from process 51. See J111 for characteristics.TO-9211. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 40 VVGS Gate-Source Voltage -40
pf5103.pdf

October 2006PF5103tmN-Channel SwitchFeatures This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers. Sourced from process 51. TO-92 Marking : PF51031 2 3 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 40 VVGS Ga
Otros transistores... MMBFJ310 , MPF102 , P1086 , P1087 , STP11NB40 , STP11NB40FP , STP9NB50 , STP9NB50FP , P60NF06 , PF5103 , PN4302 , PN4303 , PN4861 , PN5432 , PN5433 , PN5434 , TIS73 .
History: HGD040N06SL | BLP02N06-D | 2SK615 | VSA007N02KD | 2SK2272-01R | 2SK630 | KMB8D0P30Q
History: HGD040N06SL | BLP02N06-D | 2SK615 | VSA007N02KD | 2SK2272-01R | 2SK630 | KMB8D0P30Q



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