U309 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: U309
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 35 Ohm
Paquete / Cubierta: TO-52

Búsqueda de reemplazo de MOSFET U309

U309 Datasheet (PDF)

..1. Size:96K vishay
j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf

J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

..2. Size:98K siliconix
j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

0.1. Size:195K samhop
stu309dh.pdf

GreenProductS TU309DHS amHop Microelectronics C orp.Apr 20 2007Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max22 @ VG S = 10V 34 @ VG S = -10V-30V -14A30V 18A34 @ VG S = 4.5V 54 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1

0.2. Size:174K samhop
stu309d.pdf

S TU309DS amHop Microelectronics C orp.Nov 22 2006Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max23 @ VG S = 10V 35 @ VG S = -10V-30V -14A30V 18A35 @ VG S = 4.5V 55 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1S 2S 1 N-ch S

0.3. Size:662K ruichips
ru3091m.pdf

RU3091MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DRDS (ON) =2.8m(Typ.)@VGS=10V DDDRDS (ON) =3.4m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching SpeedG 100% avalanche tested SSSPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN5060DApplications DC/DC

0.4. Size:305K ruichips
ru3090m.pdf

RU3090M N-Channel Advanced Power MOSFET Features Pin Description 30V/98A, RDS (ON) =1.7m(Typ.)@VGS=10V RDS (ON) =3.2m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MO

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