U309 Todos los transistores

 

U309 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: U309
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 4 V
   |Id|ⓘ - Corriente continua de drenaje: 0.03 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 35 Ohm
   Paquete / Cubierta: TO-52
     - Selección de transistores por parámetros

 

U309 Datasheet (PDF)

 ..1. Size:96K  vishay
j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf pdf_icon

U309

J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

 ..2. Size:98K  siliconix
j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf pdf_icon

U309

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

 0.1. Size:195K  samhop
stu309dh.pdf pdf_icon

U309

GreenProductS TU309DHS amHop Microelectronics C orp.Apr 20 2007Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max22 @ VG S = 10V 34 @ VG S = -10V-30V -14A30V 18A34 @ VG S = 4.5V 54 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1

 0.2. Size:174K  samhop
stu309d.pdf pdf_icon

U309

S TU309DS amHop Microelectronics C orp.Nov 22 2006Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max23 @ VG S = 10V 35 @ VG S = -10V-30V -14A30V 18A35 @ VG S = 4.5V 55 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1S 2S 1 N-ch S

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRFU9220PBF | SIHF9540S | HITJ0203MP | SPP80P06PH | 2SK1443 | IRFPC42R | AP85U03GM-HF

 

 
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