All MOSFET. U309 Datasheet

 

U309 MOSFET. Datasheet pdf. Equivalent


   Type Designator: U309
   Type of Transistor: JFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.03 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 35 Ohm
   Package: TO-52

 U309 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

U309 Datasheet (PDF)

 ..1. Size:96K  vishay
 j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf

U309 U309

J/SST/U308 SeriesVishay SiliconixN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310PRODUCT SUMMARYPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 -1 to -6.5 -25 8 12J309 -1 to -4 -25 10 12J310 -2 to -6.5 -25 8 24SST308 -1 to -6.5 -25 8 12SST309 -1 to -4 -25 10 12SST310 -2 to -6.5 -25 8 24U309 -1 to -4 -25 10 12U310 -2.5 to -6 -25 10

 ..2. Size:98K  siliconix
 j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf

U309 U309

J/SST/U308 SeriesN-Channel JFETsJ308 SST308 U309J309 SST309 U310J310 SST310Product SummaryPart Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)J308 1 to 6.5 25 8 12J309 1 to 4 25 10 12J310 2 to 6.5 25 8 24SST308 1 to 6.5 25 8 12SST309 1 to 4 25 10 12SST310 2 to 6.5 25 8 24U309 1 to 4 25 10 12

 0.1. Size:195K  samhop
 stu309dh.pdf

U309 U309

GreenProductS TU309DHS amHop Microelectronics C orp.Apr 20 2007Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max22 @ VG S = 10V 34 @ VG S = -10V-30V -14A30V 18A34 @ VG S = 4.5V 54 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1

 0.2. Size:174K  samhop
 stu309d.pdf

U309 U309

S TU309DS amHop Microelectronics C orp.Nov 22 2006Dual E nhancement Mode Field Effect Transistor ( N and P Channel)(N-C hannel) (PPR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel)VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max23 @ VG S = 10V 35 @ VG S = -10V-30V -14A30V 18A35 @ VG S = 4.5V 55 @ VG S = -4.5VD1 D2D1/D2G 1G 2S 1G1S 2S 1 N-ch S

 0.3. Size:662K  ruichips
 ru3091m.pdf

U309 U309

RU3091MN-Channel Advanced Power MOSFETFeatures Pin Description 30V/90A,DRDS (ON) =2.8m(Typ.)@VGS=10V DDDRDS (ON) =3.4m(Typ.)@VGS=4.5V Super High Dense Cell Design Ultra Low On-Resistance Fast Switching SpeedG 100% avalanche tested SSSPIN1 Lead Free and Green Devices Available (RoHS Compliant)PIN1PDFN5060DApplications DC/DC

 0.4. Size:305K  ruichips
 ru3090m.pdf

U309 U309

RU3090M N-Channel Advanced Power MOSFET Features Pin Description 30V/98A, RDS (ON) =1.7m(Typ.)@VGS=10V RDS (ON) =3.2m(Typ.)@VGS=4.5V Super High Dense Cell Design Reliable and Rugged 100% avalanche tested PDFN5060 Lead Free and Green Devices Available (RoHS Compliant) Applications DC/DC Conversion Switching Application N-Channel MO

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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