U309 JFET Datasheet: N-Ch, 25V, 0.03A. Full specification with pinout and replacement list

U309 Specs and Replacement

Type Designator: U309

Type of Transistor: JFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 4 V

|Id| ⓘ - Maximum Drain Current: 0.03 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 35 Ohm

Package: TO-52

U309 substitution

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U309 datasheet

..1. Size:96K vishay
j308 sst308 j309 sst309 j310 sst310 u309 u310.pdf pdf_icon

J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 -1 to -6.5 -25 8 12 J309 -1 to -4 -25 10 12 J310 -2 to -6.5 -25 8 24 SST308 -1 to -6.5 -25 8 12 SST309 -1 to -4 -25 10 12 SST310 -2 to -6.5 -25 8 24 U309 -1 to -4 -25 10 12 U310 -2.5 to -6 -25 10... See More ⇒

..2. Size:98K siliconix
j308 j309 j310 sst308 sst310 sst309 u309 u310.pdf pdf_icon

J/SST/U308 Series N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 Product Summary Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 1 to 6.5 25 8 12 J309 1 to 4 25 10 12 J310 2 to 6.5 25 8 24 SST308 1 to 6.5 25 8 12 SST309 1 to 4 25 10 12 SST310 2 to 6.5 25 8 24 U309 1 to 4 25 10 12... See More ⇒

0.1. Size:195K samhop
stu309dh.pdf pdf_icon

Green Product S TU309DH S amHop Microelectronics C orp. Apr 20 2007 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 22 @ VG S = 10V 34 @ VG S = -10V -30V -14A 30V 18A 34 @ VG S = 4.5V 54 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1... See More ⇒

0.2. Size:174K samhop
stu309d.pdf pdf_icon

S TU309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field Effect Transistor ( N and P Channel) (N-C hannel) (P PR ODUC T S UMMAR Y PR ODUC T S UMMAR Y -C hannel) VDS S ID R DS (ON) ( m ) Max VDS S ID R DS (ON) ( m ) Max 23 @ VG S = 10V 35 @ VG S = -10V -30V -14A 30V 18A 35 @ VG S = 4.5V 55 @ VG S = -4.5V D1 D2 D1/D2 G 1 G 2 S 1 G1 S 2 S 1 N-ch S... See More ⇒