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VN10KE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: VN10KE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 0.17 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 25 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm

Encapsulados: TO-52

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VN10KE datasheet

 9.1. Size:57K  1
vn0610l vn10kls vn2222l.pdf pdf_icon

VN10KE

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel

 9.2. Size:57K  vishay
vn0610l vn10kls vn2222l.pdf pdf_icon

VN10KE

VN0610L, VN10KLS, VN2222L Vishay Siliconix N-Channel 60-V (D-S) MOSFETs with Zener Gate PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27 VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Rel

 9.3. Size:51K  vishay
vn10kc.pdf pdf_icon

VN10KE

VN10KC New Product Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 60 5 @ VGS = 10 V 0.8 to 2.5 0.31 FEATURES BENEFITS APPLICATIONS D Zener Diode Input Protected D Extra ESD Protection D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. D Low On-Resistance 3 W D Low Offset Voltage D Batt

 9.4. Size:571K  supertex
vn10k.pdf pdf_icon

VN10KE

Supertex inc. VN10K N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdown vertical DMOS structure and Supertex s well-proven, silicon- Low power drive requirement gate manufacturing process. This combination produces a Ease of paralleling device with the power

Otros transistores... U1898 , J308 , SST308 , SST309 , SST310 , U309 , U310 , VN0610L , P60NF06 , VN10KM , VN2222L , TN0601L , VN0606L , VN66AFD , 2SK2671 , 2SK2850-01 , 2SK2148-01R .

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