Справочник MOSFET. VN10KE

 

VN10KE MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: VN10KE
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 15 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.17 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Cossⓘ - Выходная емкость: 25 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 5 Ohm
   Тип корпуса: TO-52

 Аналог (замена) для VN10KE

 

 

VN10KE Datasheet (PDF)

 9.1. Size:57K  1
 vn0610l vn10kls vn2222l.pdf

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VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel

 9.2. Size:57K  vishay
 vn0610l vn10kls vn2222l.pdf

VN10KE VN10KE

VN0610L, VN10KLS, VN2222LVishay SiliconixN-Channel 60-V (D-S) MOSFETs with Zener GatePRODUCT SUMMARYPart Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)VN0610L 5 @ VGS = 10 V 0.8 to 2.5 0.27VN10KLS 60 5 @ VGS = 10 V 0.8 to 2.5 0.31VN2222L 7.5 @ VGS = 10 V 0.6 to 2.5 0.23FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Rel

 9.3. Size:51K  vishay
 vn10kc.pdf

VN10KE VN10KE

VN10KCNew ProductVishay SiliconixN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYV(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A)60 5 @ VGS = 10 V 0.8 to 2.5 0.31FEATURES BENEFITS APPLICATIONSD Zener Diode Input Protected D Extra ESD Protection D Drivers: Relays, Solenoids, Lamps, Hammers, Displays,Memories, Transistors, etc.D Low On-Resistance: 3 W D Low Offset VoltageD Batt

 9.4. Size:571K  supertex
 vn10k.pdf

VN10KE VN10KE

Supertex inc. VN10KN-Channel Enhancement-ModeVertical DMOS FETFeatures General DescriptionThis enhancement-mode (normally-off) transistor utilizes a Free from secondary breakdownvertical DMOS structure and Supertexs well-proven, silicon- Low power drive requirementgate manufacturing process. This combination produces a Ease of parallelingdevice with the power

 9.5. Size:129K  semelab
 vn10kcsm4.pdf

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VN10KCSM4

 9.6. Size:223K  semelab
 vn10k-to18.pdf

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N-CHANNEL ENHANCEMENT MODE MOSFET VN10K Low RDS(on), VGS(th), CISS And Fast Switching Speeds Hermetic TO-18 Metal package. Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VDS Drain Source Voltage 60V VGS G

 9.7. Size:202K  siliconix
 vn0619l vn10km vn2222l.pdf

VN10KE VN10KE

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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