SMK0965F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SMK0965F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 35 nC
   trⓘ - Tiempo de subida: 69 nS
   Cossⓘ - Capacitancia de salida: 153 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
   Paquete / Cubierta: TO-220F

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SMK0965F Datasheet (PDF)

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smk0965f.pdf

SMK0965F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features High Voltage : BV =650V(Min.) DSS Low C : C =16pF(Typ.) rss rss Low gate charge : Qg=35nC(Typ.) Low R : R =0.85(Max.) DS(on) DS(on)G D S Ordering Information Part Number Marking Package TO-220F-3L SMK0965F SMK0965 TO-220F-3L Marking Diagram AUK = Manufacture Logo

0.1. Size:408K auk
smk0965fj.pdf

SMK0965FJAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information G Type No. Marking Package Code D S S TO-220F-3L SMK0965FJ SMK0965TO-220F-3L (J Forming) Ma

0.2. Size:472K auk
smk0965fc.pdf

SMK0965FCAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information Type No. Marking Package Code G D S S TO-220F-3L SMK0965FC SMK0965TO-220F-3L (C Forming) Marki

9.1. Size:574K auk
smk0990ci.pdf

SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =900V (Min.) DSS Low gate charge: Q =52nC (Typ.) g Low drain-source On resistance: R =1.4 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-3P Part Number Marking Package SMK0990CI SMK0990 TO-3P

9.2. Size:571K auk
smk0990fd.pdf

SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =900V DSS Low gate charge: Q =52nC (Typ.) g Low drain-source On resistance: R =1.4 (Max.) DS(on) RoHS compliant device 100% avalanche tested G D S Ordering Information TO-220F-3L Part Number Marking Package SMK0990FD SMK0990 TO-220F-

9.3. Size:236K inchange semiconductor
smk0990ci.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SMK0990CIFEATURESNew revolutionary high voltage technologyWith TO-3PN packageDrain-Source breakdown voltage:BV =900V(Min.)DSSLow drain-source On resistance: R (on)=1.4 (Max.)DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch

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