SMK0965F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SMK0965F
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 40 W
Предельно допустимое напряжение сток-исток |Uds|: 650 V
Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 35 nC
Время нарастания (tr): 69 ns
Выходная емкость (Cd): 153 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.85 Ohm
Тип корпуса: TO-220F
SMK0965F Datasheet (PDF)
smk0965f.pdf
SMK0965FAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information Type No. Marking Package Code G D S SMK0965F SMK0965 TO-220F-3LS TO-220F-3L SMK0965F (HF) SMK0965 T
smk0965fj.pdf
SMK0965FJAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information G Type No. Marking Package Code D S S TO-220F-3L SMK0965FJ SMK0965TO-220F-3L (J Forming) Ma
smk0965fc.pdf
SMK0965FCAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=650V(Min.) D Low Crss : Crss=16pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.85(Max.) G Ordering Information Type No. Marking Package Code G D S S TO-220F-3L SMK0965FC SMK0965TO-220F-3L (C Forming) Marki
smk0990ci.pdf
SMK0990CI Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=900V (Min.) Low gate charge: Qg=52nC (Typ.) Low drain-source On resistance: RDS(on)=1.4 (Max.) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-3P SMK0990CI SMK0990 TO-3P Markin
smk0990fd.pdf
z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=900V Low gate charge: Qg=52nC (Typ.) Low drain-source On resistance: RDS(on)=1.4 (Max.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SMK0990FD SMK0990 TO-220F-3L
smk0990ci.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor SMK0990CIFEATURESNew revolutionary high voltage technologyWith TO-3PN packageDrain-Source breakdown voltage:BV =900V(Min.)DSSLow drain-source On resistance: R (on)=1.4 (Max.)DS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch
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