SMN01Z30Q Todos los transistores

 

SMN01Z30Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMN01Z30Q
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 2.9 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 15 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 8 Ohm
   Paquete / Cubierta: SOT-223

 Búsqueda de reemplazo de MOSFET SMN01Z30Q

 

SMN01Z30Q Datasheet (PDF)

 ..1. Size:436K  auk
smn01z30q.pdf

SMN01Z30Q
SMN01Z30Q

SMN01Z30QAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=300V(Min.) D Low Crss : Crss=3.2pF(Typ.) Low gate charge : Qg=2.9nC(Typ.) D Low RDS(on) : RDS(on)=8(Max.) G G Ordering Information D Type No. Marking Package Code S S SMN01Z30Q SMN01Z30 SOT-223SOT-223 Marking Diagram C

 9.1. Size:225K  philips
psmn018-80ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 9.2. Size:221K  philips
psmn012-80ps.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

 9.3. Size:101K  philips
psmn015-100p 100b.pdf

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PSMN015-100P/100BN-channel TrenchMOS Standard level FETRev. 05 14 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Avalanche ruggedness rated.1.3 Applications DC-to-DC converters Switched-

 9.4. Size:91K  philips
psmn015-110p.pdf

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PSMN015-110PTrenchMOS Standard level FETRev. 01 08 January 2004 Product data1. Product profile1.1 DescriptionSiliconMAX products use the latest Philips TrenchMOS technology to achievethe lowest possible on-state resistance in each package.1.2 Features Low on-state resistance Low gate charge.1.3 Applications DC-to-DC converters Switched-mode power supplies.1.4

 9.5. Size:218K  philips
psmn014-40ys.pdf

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SMN01Z30Q

PSMN014-40YSN-channel LFPAK 40 V, 14 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 9.6. Size:100K  philips
psmn010-55d.pdf

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Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)

 9.7. Size:190K  philips
psmn015-60ps.pdf

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SMN01Z30Q

PSMN015-60PSN-channel 60 V 14.8 m standard level MOSFETRev. 3 23 June 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to

 9.8. Size:170K  philips
psmn013-100ps.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-100PSN-channel 100V 13.9m standard level MOSFET in TO220.Rev. 02 22 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 9.9. Size:100K  philips
psmn010-55d 4.pdf

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Philips Semiconductors Product specification N-channel logic level TrenchMOS transistor PSMN010-55D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d VDSS = 55 V Very low on-state resistance Fast switching ID = 75 A Logic level compatibleRDS(ON) 10.5 m (VGS = 10 V)gRDS(ON) 12 m (VGS = 5 V)sGENERAL DESCRIPTION PINNING SOT428 (DPAK)

 9.10. Size:241K  philips
psmn017-60ys.pdf

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SMN01Z30Q

PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 9.11. Size:397K  philips
psmn017-30ll.pdf

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SMN01Z30Q

PSMN017-30LLN-channel QFN3333 30 V 17 m logic level MOSFETRev. 03 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

 9.12. Size:232K  philips
psmn012-100ys.pdf

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SMN01Z30Q

PSMN012-100YSN-channel 100V 12m standard level MOSFET in LFPAKRev. 04 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 9.13. Size:221K  philips
psmn013-80ys.pdf

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SMN01Z30Q

PSMN013-80YSN-channel LFPAK 80 V 12.9 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 9.14. Size:399K  philips
psmn013-30ll.pdf

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SMN01Z30Q

PSMN013-30LLN-channel QFN3333 30 V 13 m logic level MOSFETRev. 04 7 July 2010 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in QFN3333 package qualified to 150 C. This product is designed and qualified for use in a wide range of industrial, communications and power supply equipment.1.2 Features and benefits High efficiency due

 9.15. Size:219K  philips
psmn011-80ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 9.16. Size:213K  philips
psmn013-100es.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-100ESN-channel 100 V 13.9 m standard level MOSFET in I2PAKRev. 02 19 February 2010 Objective data sheet1. Product profile1.1 General descriptionStandard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits

 9.17. Size:232K  philips
psmn012-60ys.pdf

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SMN01Z30Q

PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench

 9.18. Size:153K  philips
psmn015-100 series hg 3.pdf

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SMN01Z30Q

DISCRETE SEMICONDUCTORSDATA SHEETPSMN015-100B; PSMN015-100PN-channel TrenchMOS(TM)transistorProduct specification August 1999Philips Semiconductors Product specificationN-channel TrenchMOS(TM) transistor PSMN015-100B; PSMN015-100PFEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low therma

 9.19. Size:236K  philips
psmn016-100ps.pdf

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SMN01Z30Q

PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO220Rev. 01 1 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 9.20. Size:240K  philips
psmn016-100ys.pdf

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SMN01Z30Q

PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 03 30 March 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tre

 9.21. Size:293K  nxp
psmn012-60ms.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-60MSN-channel 60 V 12 m standard level MOSFET in LFPAK3319 December 2019 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. This product isdesigned and qualified for use in a wide range of motor, industrial, communications and domesticequipment.2. Features and benefits High efficiency due to low switching and

 9.22. Size:825K  nxp
psmn018-80ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN018-80YSN-channel LFPAK 80 V 18 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 9.23. Size:365K  nxp
psmn013-30mlc.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-30MLCN-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower TechnologyRev. 4 15 June 2012 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and ben

 9.24. Size:338K  nxp
psmn011-60ml.pdf

SMN01Z30Q
SMN01Z30Q

PSMN011-60MLN-channel 60 V 11.3 m logic level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK33 package. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduction loss

 9.25. Size:194K  nxp
psmn017-30pl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN017-30PLN-channel 30 V 17 m logic level MOSFET in TO220Rev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t

 9.26. Size:723K  nxp
psmn012-80ps.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-80PSN-channel 80 V 11 m standard level MOSFETRev. 02 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to low

 9.27. Size:342K  nxp
psmn011-60ms.pdf

SMN01Z30Q
SMN01Z30Q

PSMN011-60MSN-channel 60 V 11.3 m standard level MOSFET in LFPAK334 June 2013 Product data sheet1. General descriptionStandard level enhancement mode N-channel MOSFET in LFPAK33 package. Thisproduct is designed and qualified for use in a wide range of industrial, communicationsand domestic equipment.2. Features and benefits High efficiency due to low switching and conductio

 9.28. Size:202K  nxp
psmn016-100bs.pdf

SMN01Z30Q
SMN01Z30Q

PSMN016-100BSN-channel 100V 16 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficienc

 9.29. Size:685K  nxp
psmn015-110p.pdf

SMN01Z30Q
SMN01Z30Q

PSMN015-110PN-channel TrenchMOS SiliconMAX standard level FETRev. 02 6 October 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

 9.30. Size:756K  nxp
psmn013-60yl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-60YLN-channel 60 V, 13 m logic level MOSFET in LFPAK563 June 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and l

 9.31. Size:707K  nxp
psmn015-100p.pdf

SMN01Z30Q
SMN01Z30Q

PSMN015-100PN-channel TrenchMOS SiliconMAX standard level FETRev. 06 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 9.32. Size:720K  nxp
psmn015-100yl.pdf

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SMN01Z30Q

PSMN015-100YLN-channel 100 V, 15 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.33. Size:819K  nxp
psmn014-40ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN014-40YSN-channel LFPAK 40 V, 14 m standard level MOSFETRev. 03 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchM

 9.34. Size:722K  nxp
psmn012-100yl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-100YLN-channel 100 V, 12 m logic level MOSFET in LFPAK5620 October 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.35. Size:800K  nxp
psmn017-80ps.pdf

SMN01Z30Q
SMN01Z30Q

PSMN017-80PSN-channel 80 V 17 m standard level MOSFET in TO220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High effic

 9.36. Size:797K  nxp
psmn015-60ps.pdf

SMN01Z30Q
SMN01Z30Q

PSMN015-60PSN-channel 60 V 14.8 m standard level MOSFETRev. 3 23 June 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due to

 9.37. Size:205K  nxp
psmn017-80bs.pdf

SMN01Z30Q
SMN01Z30Q

PSMN017-80BSN-channel 80 V 17 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 9.38. Size:731K  nxp
psmn010-80yl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN010-80YLN-channel 80 V, 10 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

 9.39. Size:317K  nxp
psmn011-100ysf.pdf

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SMN01Z30Q

PSMN011-100YSFNextPower 100V, 10.9 m N-channel MOSFET in LFPAK56package18 March 2019 Product data sheet1. General descriptionNextPower 100V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Low Qrr for higher efficiency and lower spiking Qualified to 175 C Low QG x RDSon FOM for

 9.40. Size:188K  nxp
psmn017-30el.pdf

SMN01Z30Q
SMN01Z30Q

PSMN017-30ELN-channel 30 V 17 m logic level MOSFET in I2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t

 9.41. Size:283K  nxp
psmn013-100yse.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-100YSEN-channel 100 V 13 m standard level MOSFET in LFPAK5618 December 2012 Product data sheet1. General descriptionStandard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part ofNXP's "NextPower Live" portfolio, the PSMN013-100YSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn on,whil

 9.42. Size:806K  nxp
psmn017-60ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN017-60YSN-channel LFPAK 60 V 15.7 m standard level MOSFETRev. 02 1 April 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 9.43. Size:205K  nxp
psmn013-100xs.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-100XSN-channel 100V 13 m standard level MOSFET in TO220F (SOT186A)Rev. 2 6 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in TO220F (SOT186A) package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefit

 9.44. Size:866K  nxp
psmn012-100ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-100YSN-channel 100V 12m standard level MOSFET in LFPAKRev. 04 23 February 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 9.45. Size:201K  nxp
psmn015-60bs.pdf

SMN01Z30Q
SMN01Z30Q

PSMN015-60BSN-channel 60 V 14.8 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficien

 9.46. Size:231K  nxp
psmn012-25ylc.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-25YLCN-channel 25 V 12.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 1 25 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 9.47. Size:743K  nxp
psmn019-100yl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN019-100YLN-channel 100 V, 19 m logic level MOSFET in LFPAK564 November 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon

 9.48. Size:728K  nxp
psmn013-80ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-80YSN-channel LFPAK 80 V 12.9 m standard level MOSFETRev. 01 25 June 2009 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMOS

 9.49. Size:902K  nxp
psmn013-30ylc.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-30YLCN-channel 30 V 13.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 9.50. Size:193K  nxp
psmn017-30bl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN017-30BLN-channel 30 V 17 m logic level MOSFET in D2PAKRev. 2 3 April 2012 Product data sheet1. Product profile1.1 General descriptionLogic level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency due t

 9.51. Size:259K  nxp
psmn018-100psf.pdf

SMN01Z30Q
SMN01Z30Q

PSMN018-100PSFNextPower 100 V, 18 m N-channel MOSFET in TO220package10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 9.52. Size:819K  nxp
psmn011-80ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO

 9.53. Size:226K  nxp
psmn011-30ylc.pdf

SMN01Z30Q
SMN01Z30Q

PSMN011-30YLCN-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 9.54. Size:852K  nxp
psmn012-60ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-60YSN-channel LFPAK 60 V, 11.1 m standard level MOSFETRev. 01 5 January 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Trench

 9.55. Size:233K  nxp
psmn010-25ylc.pdf

SMN01Z30Q
SMN01Z30Q

PSMN010-25YLCN-channel 25 V 10.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 2 25 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene

 9.56. Size:798K  nxp
psmn016-100ps.pdf

SMN01Z30Q
SMN01Z30Q

PSMN016-100PSN-channel 100V 16 m standard level MOSFET in TO-220Rev. 3 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High eff

 9.57. Size:250K  nxp
psmn018-100esf.pdf

SMN01Z30Q
SMN01Z30Q

PSMN018-100ESFNextPower 100 V, 18 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s

 9.58. Size:896K  nxp
psmn016-100ys.pdf

SMN01Z30Q
SMN01Z30Q

PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 4 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanc

 9.59. Size:204K  nxp
psmn012-80bs.pdf

SMN01Z30Q
SMN01Z30Q

PSMN012-80BSN-channel 80 V 11 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency

 9.60. Size:758K  nxp
psmn014-80yl.pdf

SMN01Z30Q
SMN01Z30Q

PSMN014-80YLN-channel 80 V, 14 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and

 9.61. Size:731K  nxp
psmn013-100bs.pdf

SMN01Z30Q
SMN01Z30Q

PSMN013-100BSN-channel 100V 13.9m standard level MOSFET in D2PAK21 February 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc

 9.62. Size:635K  auk
smn01l20q.pdf

SMN01Z30Q
SMN01Z30Q

SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R =1.35 @ V =10V DS(on) GSD Low gate charge: Q =5.7nC(Typ.) @V =10V g GS Fast switching 100% avalanche tested G RoHS compliant device D S Ordering Information SOT-223 Part Number Marking Package SMN01L20Q SMN01L20 SOT-223 Marking Information Colu

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
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