SMN01Z30Q MOSFET. Datasheet pdf. Equivalent
Type Designator: SMN01Z30Q
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 1.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.9 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 15 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: SOT-223
SMN01Z30Q Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SMN01Z30Q Datasheet (PDF)
smn01z30q.pdf
SMN01Z30QAdvanced N-Ch Power MOSFETSWITCHING REGULATOR APPLICATIONS Features PIN Connection High Voltage : BVDSS=300V(Min.) D Low Crss : Crss=3.2pF(Typ.) Low gate charge : Qg=2.9nC(Typ.) D Low RDS(on) : RDS(on)=8(Max.) G G Ordering Information D Type No. Marking Package Code S S SMN01Z30Q SMN01Z30 SOT-223SOT-223 Marking Diagram C
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psmn010-55d.pdf
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psmn010-55d 4.pdf
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psmn012-80ps.pdf
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psmn017-80bs.pdf
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psmn013-100yse.pdf
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psmn013-80ys.pdf
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psmn013-30ylc.pdf
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psmn017-30bl.pdf
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psmn018-100psf.pdf
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psmn011-80ys.pdf
PSMN011-80YSN-channel LFPAK 80 V 11 m standard level MOSFETRev. 02 28 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced TrenchMO
psmn011-30ylc.pdf
PSMN011-30YLCN-channel 30 V 11.6 m logic level MOSFET in LFPAK using NextPower technologyRev. 3 24 October 2011 Product data sheet1. Product profile1.1 General descriptionLogic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and bene
psmn012-60ys.pdf
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psmn010-25ylc.pdf
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psmn016-100ps.pdf
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psmn018-100esf.pdf
PSMN018-100ESFNextPower 100 V, 18 m N-channel MOSFET in I2PAKpackage10 April 2017 Product data sheet1. General descriptionNextPower 100 V standard level gate drive MOSFET. Qualified to 175 C and recommended forindustrial & consumer applications.2. Features and benefits Optimised for fast switching, low spiking, high efficiency Low QG x RDSon FOM for high efficiency s
psmn016-100ys.pdf
PSMN016-100YSN-channel 100 V 16.3 m standard level MOSFET in LFPAKRev. 4 27 September 2011 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanc
psmn012-80bs.pdf
PSMN012-80BSN-channel 80 V 11 m standard level MOSFET in D2PAKRev. 2 1 March 2012 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits High efficiency
psmn014-80yl.pdf
PSMN014-80YLN-channel 80 V, 14 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon and
psmn013-100bs.pdf
PSMN013-100BSN-channel 100V 13.9m standard level MOSFET in D2PAK21 February 2014 Product data sheet1. General descriptionStandard level N-channel MOSFET in D2PAK package qualified to 175C. This productis designed and qualified for use in a wide range of industrial, communications anddomestic equipment.2. Features and benefits High efficiency due to low switching and conduc
smn01l20q.pdf
SMN01L20Q Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R =1.35 @ V =10V DS(on) GSD Low gate charge: Q =5.7nC(Typ.) @V =10V g GS Fast switching 100% avalanche tested G RoHS compliant device D S Ordering Information SOT-223 Part Number Marking Package SMN01L20Q SMN01L20 SOT-223 Marking Information Colu
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: APQ03SN80CH
History: APQ03SN80CH
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918