SMN0250F MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SMN0250F datasheet

..1. Size:345K auk
smn0250f.pdf pdf_icon

SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage BVDSS=500V (Min.) Low gate charge Qg=7nC (Typ.) Low drain-source On resistance RDS(on)=3.4 (Max.) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0250F SMN0250 TO-220F-3L

8.1. Size:97K philips
psmn025-100d 2.pdf pdf_icon

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 A g RDS(ON) 25 m s GENERAL DESCRIPTION PINNING SOT428 (DPAK) SiliconMAX products use the latest PIN DESCRIPTION tab

8.2. Size:762K nxp
psmn025-80yl.pdf pdf_icon

PSMN025-80YL N-channel 80 V, 25 m logic level MOSFET in LFPAK56 14 April 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product is designed and qualified for use in a wide range of power supply & motor control equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon an

8.3. Size:794K nxp
psmn025-100d.pdf pdf_icon

PSMN025-100D N-channel TrenchMOS SiliconMAX standard level FET Rev. 4 12 January 2012 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

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