SMN0250F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SMN0250F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 36 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3.4 Ohm
   Paquete / Cubierta: TO-220F

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SMN0250F Datasheet (PDF)

..1. Size:345K auk
smn0250f.pdf

SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=500V (Min.) Low gate charge: Qg=7nC (Typ.) Low drain-source On resistance: RDS(on)=3.4 (Max.) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0250F SMN0250 TO-220F-3L

8.1. Size:97K philips
psmn025-100d 2.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTION PINNING SOT428 (DPAK)SiliconMAX products use the latest PIN DESCRIPTIONtab

8.2. Size:762K nxp
psmn025-80yl.pdf

PSMN025-80YLN-channel 80 V, 25 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon an

8.3. Size:794K nxp
psmn025-100d.pdf

PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FETRev. 4 12 January 2012 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app

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