SMN0250F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=500V (Min.) Low gate charge: Qg=7nC (Typ.) Low drain-source On resistance: RDS(on)=3.4 (Max.) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0250F SMN0250 TO-220F-3L

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN025-100D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 47 AgRDS(ON) 25 msGENERAL DESCRIPTION PINNING SOT428 (DPAK)SiliconMAX products use the latest PIN DESCRIPTIONtab

PSMN025-80YLN-channel 80 V, 25 m logic level MOSFET in LFPAK5614 April 2016 Product data sheet1. General descriptionLogic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOStechnology. This product is designed and qualified for use in a wide range of powersupply & motor control equipment.2. Features and benefits Advanced TrenchMOS provides low RDSon an

PSMN025-100DN-channel TrenchMOS SiliconMAX standard level FETRev. 4 12 January 2012 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial app