SMN0665F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMN0665F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 29 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 5.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 79 nS
Conductancia de drenaje-sustrato (Cd): 67 pF
Resistencia entre drenaje y fuente RDS(on): 2.2 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET SMN0665F
SMN0665F Datasheet (PDF)
smn0665f.pdf
SMN0665F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=650V (Min.) Low gate charge: Qg=14nC (Typ.) Low drain-source On resistance: RDS(on)=2.2 (Max.) 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0665F SMN0665 TO-220F-3L
psmn063-150d 2.pdf
Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTION PINNING SOT428 (Dpak)SiliconMAX products use the latest PIN DESCRIPTIONtab
psmn069-100ys.pdf
PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren
psmn063-150d.pdf
PSMN063-150DN-channel TrenchMOS SiliconMAX standard level FETRev. 04 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a
psmn069-100ys.pdf
PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
