SMN0665F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SMN0665F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 79 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
   Paquete / Cubierta: TO-220F

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SMN0665F Datasheet (PDF)

..1. Size:591K auk
smn0665f.pdf

SMN0665F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =650V (Min.) DSS Low gate charge: Q =14nC (Typ.) g Low drain-source On resistance: R =2.2 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0665F SMN0665 TO-

0.1. Size:423K auk
smn0665fd.pdf

SMN0665FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=650V (Min.) Low gate charge: Qg=14nC (Typ.) Low drain-source On resistance: RDS(on)=1.8 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0665FD SMN0665 TO-220F-3L Mar

9.1. Size:97K philips
psmn063-150d 2.pdf

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTION PINNING SOT428 (Dpak)SiliconMAX products use the latest PIN DESCRIPTIONtab

9.2. Size:223K philips
psmn069-100ys.pdf

PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

9.3. Size:733K nxp
psmn063-150d.pdf

PSMN063-150DN-channel TrenchMOS SiliconMAX standard level FETRev. 04 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

9.4. Size:823K nxp
psmn069-100ys.pdf

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