Справочник MOSFET. SMN0665F

 

SMN0665F MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SMN0665F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 29 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 79 ns
   Cossⓘ - Выходная емкость: 67 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.2 Ohm
   Тип корпуса: TO-220F

 Аналог (замена) для SMN0665F

 

 

SMN0665F Datasheet (PDF)

 ..1. Size:591K  auk
 smn0665f.pdf

SMN0665F SMN0665F

SMN0665F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =650V (Min.) DSS Low gate charge: Q =14nC (Typ.) g Low drain-source On resistance: R =2.2 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0665F SMN0665 TO-

 0.1. Size:423K  auk
 smn0665fd.pdf

SMN0665F SMN0665F

SMN0665FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=650V (Min.) Low gate charge: Qg=14nC (Typ.) Low drain-source On resistance: RDS(on)=1.8 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0665FD SMN0665 TO-220F-3L Mar

 9.1. Size:97K  philips
 psmn063-150d 2.pdf

SMN0665F SMN0665F

Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTION PINNING SOT428 (Dpak)SiliconMAX products use the latest PIN DESCRIPTIONtab

 9.2. Size:223K  philips
 psmn069-100ys.pdf

SMN0665F SMN0665F

PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

 9.3. Size:733K  nxp
 psmn063-150d.pdf

SMN0665F SMN0665F

PSMN063-150DN-channel TrenchMOS SiliconMAX standard level FETRev. 04 17 December 2009 Product data sheet1. Product profile1.1 General descriptionSiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial a

 9.4. Size:823K  nxp
 psmn069-100ys.pdf

SMN0665F SMN0665F

PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren

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