SMN0665F - параметры транзистора MOSFET, его аналоги, datasheet

SMN0665F Datasheet (PDF)

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SMN0665F Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV =650V (Min.) DSS Low gate charge: Q =14nC (Typ.) g Low drain-source On resistance: R =2.2 (Max.) DS(on) 100% avalanche tested RoHS compliant device G D S Ordering Information TO-220F-3L Part Number Marking Package SMN0665F SMN0665 TO-

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SMN0665FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BVDSS=650V (Min.) Low gate charge: Qg=14nC (Typ.) Low drain-source On resistance: RDS(on)=1.8 100% avalanche tested RoHS compliant device Ordering Information G D S Part Number Marking Package TO-220F-3L SMN0665FD SMN0665 TO-220F-3L Mar

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Philips Semiconductors Product specification N-channel TrenchMOS transistor PSMN063-150D FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Very low on-state resistance VDSS = 150 V Fast switching Low thermal resistance ID = 29 AgRDS(ON) 63 msGENERAL DESCRIPTION PINNING SOT428 (Dpak)SiliconMAX products use the latest PIN DESCRIPTIONtab

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psmn069-100ys.pdf pdf_icon

PSMN069-100YSN-channel LFPAK 100 V 72.4 m standard level MOSFETRev. 02 25 October 2010 Product data sheet1. Product profile1.1 General descriptionStandard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.1.2 Features and benefits Advanced Tren