SUN0465F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUN0465F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 32 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 10 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 54 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET SUN0465F

SUN0465F Datasheet (PDF)

..1. Size:516K auk
sun0465f.pdf

SUN0465F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.3 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.7pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0465F SUN0465 TO-

7.1. Size:456K auk
sun0465i2.pdf

SUN0465I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.3 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.7pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0465I2 SUN0465 I2-PA

8.1. Size:444K auk
sun0460d.pdf

SUN0460D New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.1 (Typ.) Low gate charge: Qg=10nC (Typ.) D Low reverse transfer capacitance: Crss=4.5pF (Typ.) RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252 SUN0460D SUN0460 TO

8.2. Size:516K auk
sun0460f.pdf

SUN0460F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.1 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0460F SUN0460 TO-

8.3. Size:457K auk
sun0460i2.pdf

SUN0460I2 New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=2.1 (Typ.) Low gate charge: Qg=10nC (Typ.) Low reverse transfer capacitance: Crss=4.5pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package I2-PAK SUN0460I2 SUN0460 I2-PA

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Liste

Recientemente añadidas las descripciónes de los transistores: