SUN0550D Todos los transistores

 

SUN0550D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUN0550D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-252
     - Selección de transistores por parámetros

 

SUN0550D Datasheet (PDF)

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SUN0550D

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) D Low reverse transfer capacitance: Crss=2pF (Typ.) Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252

 7.1. Size:371K  auk
 sun0550f.pdf pdf_icon

SUN0550D

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) Low reverse transfer capacitance: Crss=2pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0550F SUN0550 TO-220F

 9.1. Size:680K  auk
 sun05a25f.pdf pdf_icon

SUN0550D

SUN05A25F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.92 (Typ.) DS(on) Low gate charge: Q =6nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A25F SU

 9.2. Size:603K  auk
 sun05a50zd.pdf pdf_icon

SUN0550D

SUN05A50ZD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on)D Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SUN05A50ZD

MOSTRAR MÁS

Otros transistores... STK830P , SUN0260D , SUN0260F , SUN0460D , SUN0460F , SUN0460I2 , SUN0465F , SUN0465I2 , SKD502T , SUN0550F , SUN0760F , SUN0760I2 , SUN0765F , SUN0765I2 , SUN1060F , SUN1060I2 , 2N7002B .

History: EY4409 | SVF7N60CF | IRF7309IPBF | AFN6520S | WFY3N02 | APT904R2AN | BRD6N70

 

 
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