SUN0550D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUN0550D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 10.5 nC
   trⓘ - Tiempo de subida: 26 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm
   Paquete / Cubierta: TO-252

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SUN0550D Datasheet (PDF)

..1. Size:304K auk
sun0550d.pdf

SUN0550D Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) D Low reverse transfer capacitance: Crss=2pF (Typ.) Halogen free device and RoHS compliant device 100% avalanche tested G Ordering Information S Part Number Marking Package TO-252

7.1. Size:371K auk
sun0550f.pdf

SUN0550F Advanced N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: RDS(on)=1.23 (Typ.) Low gate charge: Qg=10.5nC (Typ.) Low reverse transfer capacitance: Crss=2pF (Typ.) RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN0550F SUN0550 TO-220F

9.1. Size:680K auk
sun05a25f.pdf

SUN05A25F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =0.92 (Typ.) DS(on) Low gate charge: Q =6nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss RoHS compliant device 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A25F SU

9.2. Size:603K auk
sun05a50zd.pdf

SUN05A50ZD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on)D Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested G S Ordering Information TO-252 Part Number Marking Package SUN05A50ZD

9.3. Size:640K auk
sun05a50zf.pdf

SUN05A50ZF New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features Low drain-source On resistance: R =1.23 (Typ.) DS(on) Low gate charge: Q =17.5nC (Typ.) g Low reverse transfer capacitance: C =5pF (Typ.) rss Built-in ESD Diode 100% avalanche tested Ordering Information G D S Part Number Marking Package TO-220F-3L SUN05A50ZF

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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