2N7002B Todos los transistores

 ..1. Size:237K  auk
 2n7002b.pdf

2N7002B N-Channel Enhancement Mode MOSFET High Speed Switching Application Features ESD rating 2000V (HBM) Low On-Resistance RDS(on)

 ..2. Size:1211K  umw-ic
 2n7002b.pdf

R UMW UMW 2N7002B UMW 2N7002B UMW 2N7002B UMW 2N7002B UMW 2N7002B UMW 2N7002B - SOT 23 Plastic-Encapsulate MOSFETS 2N7002B MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-23 5 @10V 60V 115mA 7 @5V 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage co

 0.1. Size:334K  philips
 2n7002bkt.pdf

2N7002BKT 60 V, 290 mA N-channel Trench MOSFET Rev. 1 15 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

 0.2. Size:236K  toshiba
 t2n7002bk.pdf

T2N7002BK MOSFETs Silicon N-Channel MOS T2N7002BK T2N7002BK T2N7002BK T2N7002BK 1. Applications 1. Applications 1. Applications 1. Applications High-Speed Switching 2. Features 2. Features 2. Features 2. Features (1) ESD(HBM) level 2 kV (2) Low drain-source on-resistance RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

 0.3. Size:477K  nxp
 2n7002bks.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.4. Size:921K  nxp
 2n7002bkv.pdf

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trenc

 0.5. Size:661K  nxp
 2n7002bkmb.pdf

2N7002BKMB 60 V, single N-channel Trench MOSFET Rev. 2 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compa

 0.6. Size:719K  nxp
 2n7002bkw.pdf

2N7002BKW 60 V, 310 mA N-channel Trench MOSFET Rev. 1 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

 0.7. Size:732K  nxp
 2n7002bk.pdf

2N7002BK 60 V, 350 mA N-channel Trench MOSFET Rev. 1 17 June 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tech

 0.8. Size:1611K  cn vbsemi
 2n7002bk.pdf

2N7002BK www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1

 0.9. Size:1927K  cn tech public
 2n7002bks.pdf

V 2.5