2N7002B - Даташиты. Аналоги. Основные параметры

2N7002BN-Channel Enhancement Mode MOSFETHigh Speed Switching Application Features ESD rating: 2000V (HBM) Low On-Resistance: RDS(on)

RUMWUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002BUMW 2N7002B-SOT 23 Plastic-Encapsulate MOSFETS2N7002B MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-23 5@10V60V115mA 7@5V1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage co

2N7002BKT60 V, 290 mA N-channel Trench MOSFETRev. 1 15 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

T2N7002BKMOSFETs Silicon N-Channel MOST2N7002BKT2N7002BKT2N7002BKT2N7002BK1. Applications1. Applications1. Applications1. Applications High-Speed Switching2. Features2. Features2. Features2. Features(1) ESD(HBM) level 2 kV(2) Low drain-source on-resistance: RDS(ON) = 1.05 (typ.) (@VGS = 10 V) RDS(ON) = 1.15 (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

2N7002BKV60 V, 340 mA dual N-channel Trench MOSFETRev. 2 22 September 2010 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trenc

2N7002BKMB60 V, single N-channel Trench MOSFETRev. 2 13 June 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Logic-level compa

2N7002BKW60 V, 310 mA N-channel Trench MOSFETRev. 1 17 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technol

2N7002BK60 V, 350 mA N-channel Trench MOSFETRev. 1 17 June 2010 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tech

2N7002BKwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

V2.5