7N90 Todos los transistores

 ..1. Size:187K  utc
 7n90.pdf

UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy puls

 0.1. Size:296K  1
 ixfh7n90.pdf

 0.2. Size:326K  1
 sth7n90 sth7n90fi.pdf

 0.3. Size:270K  st
 stf7n90k5.pdf

STF7N90K5 Datasheet N-channel 900 V, 0.72 typ., 7 A, MDmesh K5 Power MOSFET in a TO-220FP package Features Order code VDS RDS(on ) max. ID STF7N90K5 900 V 0.81 7 A Industry s lowest RDS(on) x area 3 Industry s best FoM (figure of merit) 2 1 Ultra-low gate charge 100% avalanche tested TO-220FP Zener-protected D(2) Applications Switching appl

 0.4. Size:681K  fairchild semi
 fqaf7n90.pdf

March 2001 TM QFET FQAF7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.2A, 900V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored

 0.5. Size:674K  fairchild semi
 fqa7n90.pdf

March 2001 TM QFET FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7.4A, 900V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 45 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored

 0.6. Size:677K  fairchild semi
 fqa7n90m.pdf

January 2002 TM QFET FQA7N90M 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 900V, RDS(on) = 1.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored

 0.7. Size:928K  samsung
 ssf7n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

 0.8. Size:930K  samsung
 ssh7n90a.pdf

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

 0.9. Size:112K  ixys
 ixfh7n90q ixft7n90q.pdf

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 900 V VDGR TJ = 25 C to 150 C; RGS = 1 MW 900 V VGS Continuous 20 V VGSM

 0.10. Size:346K  fuji
 fmh07n90e.pdf

http //www.fujisemi.com FMH07N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate thres

 0.11. Size:400K  taiwansemi
 tsm7n90ci tsm7n90cz.pdf

TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi

 0.12. Size:369K  nell
 7n90a 7n90af.pdf

RoHS 7N90 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 7A, 900Volts DESCRIPTION D The Nell 7N90 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 900V, and max. threshold voltage of 5 volts. They are designed for use in applications such as G G s

 0.13. Size:566K  jiaensemi
 jfpc7n90c jffm7n90c.pdf

JFPC7N90C JFFM7N90C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

 0.14. Size:1165K  jiaensemi
 jfam7n90c.pdf

JFAM7N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 0.15. Size:982K  jiaensemi
 jffm7n90c.pdf

JFFM7N90C 900V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 0.16. Size:750K  samwin
 swwf7n90d swmn7n90d.pdf

SW7N90D N-channel Enhanced mode TO-220WF/TO-220SF MOSFET Features BVDSS 900V TO-220WF TO-220SF ID 7A High ruggedness Low RDS(ON) (Typ 1.7 )@VGS=10V RDS(ON) 1.7 Low Gate Charge (Typ 42nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 1 3 3 Application UPS, LED, SMPS 1. Gate 2. Drain 3. Source General Descript

 0.17. Size:487K  trinnotech
 tma7n90 tman7n90.pdf

TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni

 0.18. Size:440K  trinnotech
 tmp7n90 tmpf7n90.pdf

TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax Features ID = 7A Low gate charge RDS(ON) = 1.9 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification D G S Device Package Marking Remark TMP7N90 TO-220 TMP7N90 RoHS TMPF7N90G TO-220F TMPF7N90G Halogen Free Absolute Maximum Ratings

 0.19. Size:233K  inchange semiconductor
 fmh07n90e.pdf

isc N-Channel MOSFET Transistor FMH07N90E FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Static Drain-Source On-Resistance R = 2.0 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS (Uninterruptible Power Supply) DC-DC co

 0.20. Size:234K  inchange semiconductor
 7n90a.pdf

INCHANGE Semiconductor isc N-Channel Mosfet Transistor 7N90A FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching mode power supplies General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a