All MOSFET. 7N90 Datasheet

 

7N90 MOSFET. Datasheet pdf. Equivalent

Type Designator: 7N90

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 240 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 80 nS

Drain-Source Capacitance (Cd): 140 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO-3P_TO-220F1_TO-220_TO-262

7N90 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

7N90 Datasheet (PDF)

1.1. tmp7n90 tmpf7n90.pdf Size:440K _update

7N90
7N90

TMP7N90/TMPF7N90G VDSS = 990 V @Tjmax Features ID = 7A  Low gate charge RDS(ON) = 1.9 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP7N90 TO-220 TMP7N90 RoHS TMPF7N90G TO-220F TMPF7N90G Halogen Free Absolute Maximum Ratings

1.2. tma7n90.pdf Size:487K _upd-mosfet

7N90
7N90

TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A  Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni

 1.3. tman7n90.pdf Size:487K _upd-mosfet

7N90
7N90

TMA7N90/TMAN7N90 VDSS = 990 V @Tjmax Features ID = 7.2A  Low gate charge RDS(on) = 1.9 W(max) @ VGS= 10 V  100% avalanche tested  Improved dv/dt capability  RoHS compliant  JEDEC Qualification D TO-3P/TO3PN G S Device Package Marking Remark TMA7N90/TMAN7N90 TO-3P TMA7N90/TMAN7N90 RoHS Absolute Maximum Ratings Parameter Symbol TMA7N90/TMAN7N90 Uni

1.4. fmh07n90e.pdf Size:346K _upd-mosfet

7N90
7N90

http://www.fujisemi.com FMH07N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-3P(Q) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate thres

 1.5. tsm7n90ci tsm7n90cz.pdf Size:400K _update_mosfet

7N90
7N90

 TSM7N90 900V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)(Ω) ID (A) 2. Drain 3. Source 900 1.9 @ VGS =10V 3.5 General Description The TSM7N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provi

1.6. fqa7n90m.pdf Size:677K _fairchild_semi

7N90
7N90

January 2002 TM QFET FQA7N90M 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7A, 900V, RDS(on) = 1.8Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 40 nC) planar stripe, DMOS technology. • Low Crss ( typical 17 pF) This advanced technology has been especially tailored

1.7. fqaf7n90.pdf Size:681K _fairchild_semi

7N90
7N90

March 2001 TM QFET FQAF7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.2A, 900V, RDS(on) = 1.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored

1.8. fqa7n90.pdf Size:674K _fairchild_semi

7N90
7N90

March 2001 TM QFET FQA7N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 7.4A, 900V, RDS(on) = 1.55Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar stripe, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored

1.9. ssf7n90a.pdf Size:928K _samsung

7N90
7N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

1.10. ssh7n90a.pdf Size:930K _samsung

7N90
7N90

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 1.247 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDS

1.11. ixfh7n90q ixft7n90q.pdf Size:112K _ixys

7N90
7N90

www.DataSheet.co.kr Advanced Technical Information IXFH 7N90Q VDSS = 900 V HiPerFETTM IXFT 7N90Q ID25 = 7 A Power MOSFETs RDS(on) = 1.5 W Q-Class N-Channel Enhancement Mode trr £ 250 ns Avalanche Rated, Low Qg, High dv/dt TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 900 V VGS Continuous ±20 V VGSM

1.12. 7n90.pdf Size:187K _utc

7N90
7N90

UNISONIC TECHNOLOGIES CO., LTD 7N90 Power MOSFET 7A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N90 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse i

Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

 
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