8N80 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 8N80
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 178 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 110 nS
Cossⓘ - Capacitancia de salida: 135 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.18 Ohm
Encapsulados: TO-220 TO-220F TO-220F1 TO-220F2
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8N80 datasheet
8n80.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a
8n80.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor 8N80 DESCRIPTION Static Drain-Source On-Resistance R = 1.25 (Max) @ I = 4A DS(on) D Drain Current I =8.0A@ T =25 D C Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed switching powe
stp8n80k5 stu8n80k5.pdf
STP8N80K5, STU8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features Order codes VDS RDS(on)max. ID PTOT STP8N80K5 TAB 800 V 0.95 6 A 110 W TAB STU8N80K5 3 Worldwide best FOM (figure of merit) 2 1 3 2 Ultra low gate charge 1 IPAK TO-220 100% avalanche tested
stl8n80k5.pdf
STL8N80K5 N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code VDS RDS(on)max. ID STL8N80K5 800 V 0.95 4.5 A Outstanding RDS(on)*area 1 Worldwide best FOM (figure of merit) 2 3 Ultra low gate charge 4 100% avalanche tested PowerFLAT 5x6 VHV Zene
std8n80k5.pdf
STD8N80K5 N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on)max. ID PTOT STD8N80K5 800 V 0.95 6 A 110 W TAB Worldwide best FOM (figure of merit) 3 Ultra low gate charge 1 100% avalanche tested DPAK Zener protected Applications Switching applications F
stf8n80k5 stfi8n80k5.pdf
STF8N80K5, STFI8N80K5 N-channel 800 V, 0.8 typ., 6 A MDmesh K5 Power MOSFET in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS RDS(on)max. ID PTOT STF8N80K5 800 V 0.95 6 A 25 W STFI8N80K5 Industry s lowest RDS(on) x area Industry s best figure of merit (FoM) 3 1 2 2 Ultra low gate charge 1 3 TO-220FP I2PAKFP (TO-2
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf
January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has
fqpf8n80cydtu.pdf
January 2009 TM QFET FQP8N80C/FQPF8N80C/FQPF8N80CYDTU 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 35 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has
fqaf8n80.pdf
March 2001 TM QFET FQAF8N80 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.9A, 800V, RDS(on) = 1.2 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 44 nC) planar stripe, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored
ssf8n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu
ssh8n80a.pdf
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Sy
spp08n80c3.pdf
SPP08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff
spa08n80c3.pdf
SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capac
spi08n80c3.pdf
SPI08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262-3 Ultra low gate charge Ultra low eff
ixfh8n80 ixfh9n80.pdf
Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*
fqp8n80c fqpf8n80c fqpf8n80cydtu.pdf
December 2013 FQP8N80C / FQPF8N80C / FQPF8N80CYDTU N-Channel QFET MOSFET 800 V, 8.0 A, 1.55 Description Features This N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor s proprietary planar ID = 4.0 A stripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC) tec
8n80l-ta3-t 8n80g-ta3-t 8n80l-tf3-t 8n80g-tf3-t 8n80l-tf1-t 8n80g-tf1-t 8n80l-tf2-t 8n80g-tf2-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a
tsm8n80ci tsm8n80cz.pdf
TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition 1. Gate VDS (V) RDS(on)( ) ID (A) 2. Drain 3. Source 800 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide
aot8n80.pdf
AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
aotf8n80.pdf
AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
aok8n80.pdf
AOK8N80 800V,7.4A N-Channel MOSFET General Description Product Summary VDS 900@150 The AOK8N80 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 7.4A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aot8n80 aotf8n80.pdf
AOT8N80/AOTF8N80 800V, 7.4A N-Channel MOSFET General Description Product Summary VDS 900V@150 The AOT8N80 & AOTF8N80 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)
g8n80bf.pdf
GOFORD G8N80BF TO-220F Page 1 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 2 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 3 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD G8N80BF Page 4 HTTP //www.gofordsemi.com TEL 0755-29 961262 FAX 0755-29961466 GOFORD
ssf8n80f.pdf
SSF8N80F Main Product Characteristics VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
ssf8n80.pdf
SSF8N80 Main Product Characteristics VDSS 800V RDS(on) 1.38 (typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
brf8n80.pdf
BRF8N80(BRCS8N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features , , Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well suited for h
8n80a 8n80af 8n80b.pdf
RoHS 8N80 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET (8A, 800Volts) DESCRIPTION The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A, fast switching speed, low on-state resistance, D breakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. such as sw
cs8n80 a8h.pdf
Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs8n80 a8d.pdf
Silicon N-Channel Power MOSFET R CS8N80 A8D VDSS 800 V General Description ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power
cs8n80f a9h.pdf
Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cs8n80f a9d.pdf
Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
cm8n80f.pdf
R C88F MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1 2 1 2 3
cm8n80 to220a.pdf
R C88 MN0 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 1 2 3
ftk8n80p f dd.pdf
SEMICONDUCTOR FTK8N80P/D/DD TECHNICAL DATA 8.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in
msf8n80.pdf
MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (typ 1.3 )@VGS=10V Gate Char
fhf8n80b.pdf
N N-CHANNEL MOSFET FHF8N80B MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 800V Crss ( 14pF) Low Crss (typical 14pF ) Rdson-typ @Vgs=10V 1.25 Fast switching Qg-typ 49nC 100% 100% avalanche tested dv/dt Improved dv/dt
jfpc8n80c jffm8n80c.pdf
JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURES LOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU
swf8n80k swi8n80k swn8n80k swd8n80k swu8n80k.pdf
SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID 8A High ruggedness Low RDS(ON) (Typ 0.67 )@VGS=10V RDS(ON) 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application Adapter,LE
hfs8n80.pdf
Dec 2010 BVDSS = 800 V RDS(on) typ = 1.55 HFS8N80 ID = 8.0 A 800V N-Channel MOSFET TO-220F FEATURES 1 Originative New Design 2 3 Superior Avalanche Rugged Technology 1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge 35 nC (Typ.) Unrivalled Gate Charge 35 nC (Typ ) Ex
tman8n80.pdf
TMAN8N80 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 8A
tmp8n80 tmpf8n80.pdf
TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A
wml08n80m3 wmn08n80m3 wmm08n80m3 wmo08n80m3 wmp08n80m3 wmk08n80m3.pdf
WML08N80M3, W 80M3, WM M3 WMN08N8 MM08N80M WMO0 80M3, WM M3 08N80M3, WMP08N8 MK08N80M 800V 1.2 S unction Power M T V Super Ju MOSFET Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge pe
cs8n80fa9d.pdf
Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po
atm8n80tf.pdf
ATM8N80TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 800V Continuous Drain Current 8A DESCRIPTION The ATM8N80TF is a N-channel mode power MOSFET, it uses ATs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse
fir8n80fg.pdf
FIR8N80FG Advanced N-Ch Power MOSFET PIN Connection TO-220F Features Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge Qg= 27nC (Typ.) G BVDSS=800V,ID=7.5A D S RDS(on) 1.9 (Max) @VG=10V g Schematic dia ram D 100% Avalanche Tested G S Marking Diagram Y = Year A
tf68n80.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TF68N80 POWER MOSFET Features 68V,80A N-Channel MOSFET RDS(on)(typ.)=6.5m @VGS=10V G G High ruggedness G D D Fast switching TO-263 S S TO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application Absolute Maximum Ratings Symbol Parameter Value Units
hms18n80 hms18n80f.pdf
HMS18N80,HMS18N80F N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industry s ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio
sfp060n80c3 sfb058n80c3.pdf
SFP060N80C3,SFB058N80C3 N-MOSFET 80V, 5.0m , 120A Features Product Summary Low on resistance V 80V DS Low gate charge R 5.0m DS(on) typ. Fast switching I 120A D High avalanche current Low reverse transfer capacitances 100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and
aotf8n80.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF8N80 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMUM
spp08n80c3.pdf
isc N-Channel MOSFET Transistor SPP08N80C3 ISPP08N80C3 FEATURES Static drain-source on-resistance RDS(on) 0.65 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION High peak current capability Ultra low gate charge Ultra low effective capacitances ABS
aok8n80.pdf
isc N-Channel MOSFET Transistor AOK8N80 FEATURES Drain Current I = 7.4A@ T =25 D C Drain Source Voltage- V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.63 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
spa08n80c3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA08N80C3 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
Otros transistores... 7N90, 1N80, 2N80, 3N80, 4N80, 5N80, 6N80, 7N80, 2N7002, 9N80, 10N80, 12N80, 1N70Z, 2N70, 2N70Z, 2N70ZL, 2N70K
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