8N80 Datasheet and Replacement

UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 8N80DESCRIPTIONStatic Drain-Source On-Resistance: R = 1.25(Max) @ I = 4ADS(on) DDrain Current I =8.0A@ T =25D CFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed switching powe

STP8N80K5, STU8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in TO-220 and IPAK packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. ID PTOTSTP8N80K5TAB800 V 0.95 6 A 110 WTABSTU8N80K53 Worldwide best FOM (figure of merit)2132 Ultra low gate charge1IPAKTO-220 100% avalanche tested

STL8N80K5N-channel 800 V, 0.80 typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT 5x6 VHV packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. IDSTL8N80K5 800 V 0.95 4.5 A Outstanding RDS(on)*area1 Worldwide best FOM (figure of merit)23 Ultra low gate charge4 100% avalanche testedPowerFLAT 5x6 VHV Zene

STD8N80K5N-channel 800 V, 0.8 typ., 6 A Zener-protected SuperMESH 5 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on)max. ID PTOTSTD8N80K5 800 V 0.95 6 A 110 WTAB Worldwide best FOM (figure of merit)3 Ultra low gate charge1 100% avalanche testedDPAK Zener protectedApplications Switching applicationsF

STF8N80K5, STFI8N80K5N-channel 800 V, 0.8 typ., 6 A MDmesh K5 Power MOSFET in TO-220FP and I2PAKFP packagesDatasheet - production dataFeaturesOrder codes VDS RDS(on)max. ID PTOTSTF8N80K5800 V 0.95 6 A 25 WSTFI8N80K5 Industrys lowest RDS(on) x area Industrys best figure of merit (FoM) 3122 Ultra low gate charge13TO-220FPI2PAKFP (TO-2

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

January 2009TMQFETFQP8N80C/FQPF8N80C/FQPF8N80CYDTU800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 8A, 800V, RDS(on) = 1.55 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 35 nC)planar stripe, DMOS technology. Low Crss ( typical 13 pF)This advanced technology has

March 2001TMQFETFQAF8N80800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.9A, 800V, RDS(on) = 1.2 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 44 nC)planar stripe, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Valu

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1000 (Typ.)1231.Gate 2. Drain 3. Source1.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSy

SPP08N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.65DS(on)max Extreme dv/dt ratedQ 45 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

SPA08N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.65DS(on)max Extreme dv/dt ratedQ 45 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capac

SPI08N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.65DS(on)max Extreme dv/dt ratedQ 45 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262-3 Ultra low gate charge Ultra low eff

Preliminary Data SheetVDSS ID25 RDS(on) trrHiPerFETTMIXFH8N80 800V 8A 1.1 250 nsIXFH9N80 800V 9A 0.9 250 nsPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 V TO-247 SMD*

December 2013FQP8N80C / FQPF8N80C / FQPF8N80CYDTUN-Channel QFET MOSFET800 V, 8.0 A, 1.55 Description FeaturesThis N-Channel enhancement mode power MOSFET is 8.0 A, 800 V, RDS(on) = 1.55 (Max.) @ VGS = 10 V,produced using Fairchild Semiconductors proprietary planar ID = 4.0 Astripe and DMOS technology. This advanced MOSFET Low Gate Charge (Typ. 35 nC)tec

UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTCs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche a

TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate VDS (V) RDS(on)() ID (A) 2. Drain 3. Source 800 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide

AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOT8N80/AOTF8N80800V, 7.4A N-Channel MOSFETGeneral Description Product Summary VDS900V@150The AOT8N80 & AOTF8N80 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 7.4Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

AOK8N80800V,7.4A N-Channel MOSFETGeneral Description Product Summary VDS900@150The AOK8N80 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 7.4Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

GOFORDG8N80BFTO-220FPage 1HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORDG8N80BFPage 2HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORDG8N80BFPage 3HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORDG8N80BFPage 4HTTP://www.gofordsemi.com TEL0755-29 961262 FAX0755-29961466 GOFORD

SSF8N80ZFMain Product Characteristics: VDSS 800V RDS(on) 1.1 (typ.) ID 8ATO-220FMarking and pin Schematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF8N80F Main Product Characteristics: VDSS 800V RDS(on) 1.3 (typ.) ID 8A TO-220F Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov

SSF8N80 Main Product Characteristics: VDSS 800V RDS(on) 1.38(typ.) ID 8A TO-220 Ma r k ing an d pin S che ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

BRF8N80(BRCS8N80FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, Low Crss , Fast switching. / Applications DC/DC These devices are well suited for h

RoHS 8N80 Series RoHS SEMICONDUCTORNell High Power ProductsN-Channel Power MOSFET(8A, 800Volts)DESCRIPTION The Nell 8N80 is a three-terminal silicon device with current conduction capability of 8A,fast switching speed, low on-state resistance,Dbreakdown voltage rating of 800V ,and max. threshold voltage of 5 volts. They are designed for use in applications. suchas sw

Silicon N-Channel Power MOSFET R CS8N80 A8H VDSS 800 V General Description ID 8 A CS8N80 A8H, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS8N80 A8D VDSS 800 V General Description ID 8 A CS8N80 A8D, the silicon N-channel Enhanced PD (TC=25) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.0 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

Silicon N-Channel Power MOSFET R CS8N80F A9H VDSS 800 V General Description ID 8 A CS8N80F A9H, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

RC88FMN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 12 1 23

RC88MN0 www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 800V N-Channel VDMOS RoHS 12 3

SEMICONDUCTORFTK8N80P/D/DDTECHNICAL DATA8.0 Amps, 800 Volts N-Channel MOS-FETDESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superior TO-220switching performance,and Withstand high energy pulsein

MSF8N80 800V N-Channel MOSFET Description The MSF8N80 is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220F package is universally preferred for all commercial-industrial applications Features RDS(on) (typ 1.3 )@VGS=10V Gate Char

N N-CHANNEL MOSFET FHF8N80B MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 800V Crss ( 14pF) Low Crss (typical 14pF ) Rdson-typ @Vgs=10V 1.25 Fast switching Qg-typ 49nC 100% 100% avalanche tested dv/dt Improved dv/dt

JFPC8N80C JFFM8N80C N- MOS / N-CHANNEL POWER MOSFET RoHS FEATURESLOW THERMAL RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SU

SW8N80K N-channel Enhancement mode TO-220F/TO-251/TO-251N/TO-252/TO-262 MOSFET Features BVDSS : 800V TO-220F TO-251 TO-251N TO-252 TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.67)@VGS=10V RDS(ON) : 0.67 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 1 2 1 2 1 2 1 2 3 3 3 3 Application:Adapter,LE

Dec 2010BVDSS = 800 VRDS(on) typ = 1.55 HFS8N80ID = 8.0 A800V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 35 nC (Typ.) Unrivalled Gate Charge : 35 nC (Typ ) Ex

CS48N80 PbCS48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The CS48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS CS48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

DK48N80 PbDK48N80Pb Free Plating Product70V,87A N-Channel Trench Process Power MOSFETGeneral Description The DK48N80 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS DK48N80capability and ultra low RDS(ON) is suitable for PWM, load (TO-220 HeatSink)switching especially for E-Bike controller applications. Features

TMAN8N80 N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 800V 8A

TMP8N80(G)/TMPF8N80(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 100% avalanche tested 800V 8A

WML08N80M3, W 80M3, WM M3 WMN08N8 MM08N80MWMO0 80M3, WM M3 08N80M3, WMP08N8 MK08N80M 800V 1.2 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM M3 is Wayo neration 800M ons 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D GG G Tand low ga charge pe

Silicon N-Channel Power MOSFET R CS8N80F A9D VDSS 800 V General Description ID 8 A CS8N80F A9D, the silicon N-channel Enhanced PD (TC=25) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 1.1 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

ATM8N80TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 800V Continuous Drain Current: 8A DESCRIPTION The ATM8N80TF is a N-channel mode power MOSFET, it uses ATs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse

FIR8N80FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FFeatures Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 27nC (Typ.) G BVDSS=800V,ID=7.5A D S RDS(on) : 1.9 (Max) @VG=10V gSchematic dia ram D 100% Avalanche Tested G S Marking DiagramY = YearA

Shenzhen Tuofeng Semiconductor Technology Co., LtdTF68N80POWER MOSFET Features 68V,80A N-Channel MOSFET RDS(on)(typ.)=6.5m@VGS=10V GG High ruggedness GDD Fast switching TO-263S STO-220H 100% avalanche tested Exceptional dv/dt capability Applications Switching application Absolute Maximum Ratings Symbol Parameter Value Units

HMS18N80,HMS18N80FN-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction VDS 800 V technology and design to provide excellent RDS(ON) with low RDS(ON) TYP. 280 m gate charge. This super junction MOSFET fits the industrys ID 18 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applicatio

SFP060N80C3,SFB058N80C3 N-MOSFET 80V, 5.0m, 120AFeatures Product Summary Low on resistanceV 80V DS Low gate chargeR 5.0m DS(on) typ. Fast switchingI 120A D High avalanche current Low reverse transfer capacitances100% DVDS Tested Application 100% Avalanche Tested Brushed and BLDC Motor drive systems Battery Management DC/DC and

INCHANGE Semiconductorisc N-Channel MOSFET Transistor AOTF8N80FEATURESWith TO-220 packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stagesLCD & PDP TVPower supplySwitching applicationsABSOLUTE MAXIMUM

isc N-Channel MOSFET Transistor SPP08N80C3ISPP08N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.65Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh peak current capabilityUltra low gate chargeUltra low effective capacitancesABS

isc N-Channel MOSFET Transistor FMH08N80EFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.45(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS generally applied in high efficiency switch modepower supplies.

isc N-Channel MOSFET Transistor AOK8N80FEATURESDrain Current I = 7.4A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSSStatic Drain-Source On-Resistance: R = 1.63(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA08N80C3FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET