9N80 Todos los transistores

 ..1. Size:224K  utc
 9n80.pdf

UNISONIC TECHNOLOGIES CO., LTD 9N80 Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a 1 minimum on-state resistance and superior switching performance. It TO-220F1 also can

 0.1. Size:338K  1
 sth9n80 sth9n80fi.pdf

 0.2. Size:756K  st
 stf9n80k5 stfi9n80k5.pdf

STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in TO-220FP and I PAKFP packages Datasheet - production data Features Order code V R max. I DS DS(on) D STF9N80K5 800 V 0.90 7 A STFI9N80K5 TO-220FP I2PAKFP (TO-281) Industry s lowest RDS(on) x area Industry s best figure of merit (FoM) Ultra-low gate cha

 0.3. Size:791K  st
 stp9n80k5 stw9n80k5.pdf

STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP9N80K5 800 V 0.90 7 A STW9N80K5 3 3 Industry s lowest R x area DS(on) 2 2 1 Industry s best FoM (figure of merit) 1 Ultra-low gate charge 100% avala

 0.4. Size:935K  samsung
 ssf9n80a.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.5. Size:936K  samsung
 ssh9n80a.pdf

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.000 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

 0.6. Size:89K  ixys
 ixft9n80q.pdf

IXFH 9N80Q VDSS = 800 V HiPerFETTM IXFT 9N80Q ID25 = 9 A Power MOSFETs RDS(on) = 1.1 Q-Class N-Channel Enhancement Mode trr 250 ns Avalanche Rated Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transi

 0.7. Size:204K  ixys
 ixfh8n80 ixfh9n80.pdf

Preliminary Data Sheet VDSS ID25 RDS(on) trr HiPerFETTM IXFH8N80 800V 8A 1.1 250 ns IXFH9N80 800V 9A 0.9 250 ns Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 800 V VDGR TJ = 25 C to 150 C; RGS = 1 M 800 V VGS Continuous 20 V VGSM Transient 30 V TO-247 SMD*

 0.8. Size:652K  convert
 cs9n80f cs9n80p.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS9N80F, CS9N80P 800V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS9N80F TO-220F CS9N80F CS9N8

 0.9. Size:13503K  cn scilicon
 sfp052n80bi3 sfb049n80bi3.pdf

SFP052N80BI3,SFB049N80BI3 N-MOSFET 80V, 4.4m , 120A Features Product Summary Enhancement Mode VDS 80V Very Low On-Resistance RDS(on) 4.4m Fast Switching ID 120A 100% DVDS Tested Applications 100% Avalanche Tested Light Electric Vehicles 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested

 0.10. Size:3764K  cn scilicon
 sfp049n80c3 sfb046n80c3.pdf

SFP049N80C3, SFB046N80C3 N-MOSFET 80V, 4.2m , 120A Features Product Summary Extremely low on-resistance RDS(on) VDS 80V Excellent gate charge x RDS(on) product(FOM) RDS(on) 4.2m ID 120A 100% DVDS Tested Application Motor control and drives 100% Avalanche Tested Battery management 100% Avalanche Tested 100% Avalanche Tested 100% Avalanche Tested 100% Av

 0.11. Size:687K  cn scilicon
 sfp052n80c3 sfb049n80c3.pdf

Enhancement Mode Very Low On-Resistance Fast Switching Motor Control and Drive

 0.12. Size:217K  inchange semiconductor
 9n80a.pdf

isc N-Channel MOSFET Transistor 9N80A DESCRIPTION Avalanche rugged technology Rugged gate oxide technology Lower input capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 800 V DSS GS