UNISONIC TECHNOLOGIES CO., LTD 9N80 Power MOSFET 9A, 800V N-CHANNEL POWER MOSFET 1TO-220 DESCRIPTION The UTC 9N80 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a 1minimum on-state resistance and superior switching performance. ItTO-220F1also can

STF9N80K5, STFI9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in TO-220FP and IPAKFP packages Datasheet - production data Features Order code V R max. I DS DS(on) DSTF9N80K5 800 V 0.90 7 A STFI9N80K5 TO-220FP I2PAKFP (TO-281) Industrys lowest RDS(on) x area Industrys best figure of merit (FoM) Ultra-low gate cha

STP9N80K5, STW9N80K5 N-channel 800 V, 0.73 typ., 7 A MDmesh K5 Power MOSFETs in a TO-220 and TO-247 packages Datasheet - production data Features TABOrder code V R max. I DS DS(on) DSTP9N80K5 800 V 0.90 7 A STW9N80K5 33 Industrys lowest R x area DS(on)221 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avala

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

Advanced Power MOSFETFEATURESBVDSS = 800 V Avalanche Rugged TechnologyRDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.000 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

IXFH 9N80Q VDSS = 800 VHiPerFETTMIXFT 9N80Q ID25 = 9 APower MOSFETsRDS(on) = 1.1 Q-Class N-Channel Enhancement Mode trr 250 nsAvalanche Rated Low Qg, High dv/dtSymbol Test Conditions Maximum Ratings TO-247 AD (IXFH)VDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transi

Preliminary Data SheetVDSS ID25 RDS(on) trrHiPerFETTMIXFH8N80 800V 8A 1.1 250 nsIXFH9N80 800V 9A 0.9 250 nsPower MOSFETsN-Channel Enhancement ModeHigh dv/dt, Low trr, HDMOSTM FamilyTO-247 AD (IXFH)Symbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 800 VVDGR TJ = 25C to 150C; RGS = 1 M 800 VVGS Continuous 20 VVGSM Transient 30 V TO-247 SMD*

nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N80F, CS9N80P800V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N80F TO-220F CS9N80FCS9N8

SFP052N80BI3,SFB049N80BI3 N-MOSFET 80V, 4.4m, 120AFeatures Product Summary Enhancement Mode VDS80V Very Low On-Resistance RDS(on)4.4m Fast Switching ID 120A100% DVDS TestedApplications100% Avalanche Tested Light Electric Vehicles100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested

SFP049N80C3, SFB046N80C3 N-MOSFET 80V, 4.2m, 120AFeaturesProduct Summary Extremely low on-resistance RDS(on)VDS80V Excellent gate charge x RDS(on) product(FOM)RDS(on)4.2mID 120A100% DVDS TestedApplication Motor control and drives100% Avalanche Tested Battery management100% Avalanche Tested100% Avalanche Tested100% Avalanche Tested100% Av

Enhancement Mode Very Low On-Resistance Fast Switching Motor Control and Drive

isc N-Channel MOSFET Transistor 9N80ADESCRIPTIONAvalanche rugged technologyRugged gate oxide technologyLower input capacitanceMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)CSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage (V =0) 800 VDSS GS