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5N70K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 5N70K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

5N70K Datasheet (PDF)

 ..1. Size:205K  utc
 5n70k.pdf pdf_icon

5N70K

UNISONIC TECHNOLOGIES CO., LTD 5N70K Preliminary Power MOSFET 5A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N70K is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications a

 0.1. Size:414K  silan
 svs5n70fd2 svs5n70dd2tr svs5n70mjd2 svs5n70kd2.pdf pdf_icon

5N70K

SVS5N70F(D)(MJ)(K)D2 5A700V MOS 2 123SVS5N70F(D)(MJ)(K)D2 N MOSFET TO-251J-3L1 MOS 3SVS5N70F(D)(MJ)(K)D2

 0.2. Size:907K  samwin
 swn5n70k swj5n70k.pdf pdf_icon

5N70K

SW5N70K N-channel Enhanced mode TO-251N/TO-262N MOSFET Features TO-251N TO-262N BVDSS : 700V ID : 5A High ruggedness Low RDS(ON) (Typ 0.94)@VGS=10V RDS(ON) : 0.94 Low Gate Charge (Typ 13nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:LED, Charger, TV-Power 3 3 1 1. Gate 2. Drain 3. Source 3 General D

 0.3. Size:1235K  cn hmsemi
 hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf pdf_icon

5N70K

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore

MOSTRAR MÁS

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IMW65R027M1H | CSD16410Q5A

 

 
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