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 ..1. Size:150K  utc
 9n70.pdf

UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC conv

 0.1. Size:403K  1
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 0.2. Size:528K  aosemi
 aot9n70.pdf

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.3. Size:528K  aosemi
 aotf9n70.pdf

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.4. Size:403K  aosemi
 aob9n70l.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 0.5. Size:296K  aosemi
 aowf9n70.pdf

AOWF9N70 700V,9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOWF9N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.6. Size:403K  aosemi
 aot9n70 aotf9n70 aob9n70.pdf

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150 The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V)

 0.7. Size:97K  ape
 ap09n70i-a.pdf

AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effe

 0.8. Size:201K  ape
 ap09n70r-a.pdf

AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance an

 0.9. Size:64K  ape
 ap09n70p-h-lf ap09n70p-h.pdf

AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated D BVDSS 700V Fast Switching Characteristics RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90 265VAC off-line AC/DC converter app

 0.10. Size:120K  ape
 ap09n70p-a.pdf

AP09N70P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 650V D Fast Switching RDS(ON) 0.75 GG Simple Drive Requirement ID 9A S RoHS Compliant S Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-DC converte

 0.11. Size:97K  ape
 ap09n70r.pdf

AP09N70R RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Rated BVDSS 600V D D Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G G S S Description AP09N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications.The TO-262 type provi

 0.12. Size:97K  ape
 ap09n70r-a-hf.pdf

AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test BVDSS 650V D D Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G G RoHS Compliant S S Description AP09N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications.

 0.13. Size:98K  ape
 ap09n70i-a-hf.pdf

AP09N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res

 0.14. Size:63K  ape
 ap09n70i-h-hf.pdf

AP09N70I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 700V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8.3A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugg

 0.15. Size:57K  ape
 ap09n70p-a-hf.pdf

AP09N70P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.75 Simple Drive Requirement ID 9A G RoHS Compliant & Halogen-Free S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 0.16. Size:568K  silicon standard
 ssm09n70gp-a.pdf

SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N70GP-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 0.75 is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 9A D Pb-free; RoHS-compliant TO-220 The SSM09N70GP

 0.17. Size:609K  trinnotech
 tmp9n70 tmpf9n70.pdf

TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 700V 9A

 0.18. Size:766K  cn hmsemi
 hm9n70.pdf

HM9N70 700VDS 30VGS 9A(ID) N-Channel Enha ncement Mode MOSFET Pin Description Features VDSS=700V VGSS= 30V ID=9A RDS(ON)=5m (max.)@VGS=10V Low Dense Cell Design Reliable and Rugged Advanced trench process technology Applications Synchronous Rectification Power Management in Inverter System Switching Time Test Circuit and Pin Des

 0.19. Size:261K  inchange semiconductor
 aot9n70.pdf

isc N-Channel MOSFET Transistor AOT9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 0.20. Size:252K  inchange semiconductor
 aotf9n70.pdf

isc N-Channel MOSFET Transistor AOTF9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.21. Size:252K  inchange semiconductor
 aotf9n70l.pdf

isc N-Channel MOSFET Transistor AOTF9N70L FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.22. Size:255K  inchange semiconductor
 aob9n70.pdf

isc N-Channel MOSFET Transistor AOB9N70 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

 0.23. Size:255K  inchange semiconductor
 aob9n70l.pdf

isc N-Channel MOSFET Transistor AOB9N70L FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =700V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.24. Size:240K  inchange semiconductor
 fmv09n70e.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMV09N70E FEATURES drain-source on-resistance RDS(on) 1.4 (max) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters ABSOLUTE MAXIMUM RATINGS(T