All MOSFET. 9N70 Datasheet

 

9N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: 9N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 156 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 21 nS

Drain-Source Capacitance (Cd): 130 pF

Maximum Drain-Source On-State Resistance (Rds): 1.1 Ohm

Package: TO-220_TO-220F

9N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

9N70 Datasheet (PDF)

1.1. tmp9n70 tmpf9n70.pdf Size:609K _update

9N70
9N70

 TMP9N70(G)/TMPF9N70(G) N-channel MOSFET Features BVDSS ID RDS(on)  Low gate charge 700V 9A <1.05W  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D G S Device Package Marking Remark TMP9N70 / TMPF9N70 TO-220 / TO-220F TMP9N70 / TMPF9N70 RoHS TMP9N70G / TMPF9N70G TO-220 / TO-220F TMP9N

1.2. ssm09n70gp-a.pdf Size:568K _upd-mosfet

9N70
9N70

SSM09N70GP-A N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY DESCRIPTION The SSM09N70GP-A achieves fast switching performance BVDSS 650V with low gate charge without a complex drive circuit. It RDS(ON) 0.75Ω is suitable for high voltage applications such as AC/DC converters, SMPS and general off-line switching circuits. I 9A D Pb-free; RoHS-compliant TO-220 The SSM09N70GP

 1.3. 9n70.pdf Size:150K _utc

9N70
9N70

UNISONIC TECHNOLOGIES CO., LTD 9N70 Preliminary Power MOSFET 9A, 700V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 9N70 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC converter

1.4. aotf9n70.pdf Size:528K _aosemi

9N70
9N70

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

 1.5. aowf9n70.pdf Size:296K _aosemi

9N70
9N70

AOWF9N70 700V,9A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOWF9N70 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 9A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 1.2Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche cap

1.6. aob9n70l.pdf Size:403K _aosemi

9N70
9N70

AOT9N70/AOTF9N70/AOB9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT9N70 & AOTF9N70 & AOB9N70 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 9A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 1.2Ω performance and robustness in popular AC-DC applications. By providing low RDS(on), Cis

1.7. aot9n70.pdf Size:528K _aosemi

9N70
9N70

AOT9N70/AOTF9N70 700V, 9A N-Channel MOSFET General Description Product Summary VDS 800V@150℃ The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 9A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 1.2Ω robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along wi

1.8. ap09n70i-h-hf.pdf Size:63K _a-power

9N70
9N70

AP09N70I-H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 700V Ў Fast Switching Characteristic RDS(ON) 0.85? Ў Simple Drive Requirement ID 8.3A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized d

1.9. ap09n70r-a-hf.pdf Size:97K _a-power

9N70
9N70

AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test BVDSS 650V D D Ў Fast Switching RDS(ON) 0.75? Ў Simple Drive Requirement ID 9A G G Ў RoHS Compliant S S Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. TO-262

1.10. ap09n70i-a.pdf Size:97K _a-power

9N70
9N70

AP09N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching RDS(ON) 0.75? Ў Simple Drive Requirement ID 9A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectivene

1.11. ap09n70p-h.pdf Size:64K _a-power

9N70
9N70

AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Rated D BVDSS 700V Ў Fast Switching Characteristics RDS(ON) 0.85? Ў Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90~265VAC off-line AC/DC converter applicatio

1.12. ap09n70p-a-hf.pdf Size:57K _a-power

9N70
9N70

AP09N70P-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test D BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.75Ω ▼ Simple Drive Requirement ID 9A G ▼ RoHS Compliant & Halogen-Free S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

1.13. ap09n70r.pdf Size:97K _a-power

9N70
9N70

AP09N70R RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Rated BVDSS 600V D D Ў Fast Switching RDS(ON) 0.75? Ў Simple Drive Requirement ID 9A G G S S Description AP09N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications.The TO-262 type provide high

1.14. ap09n70i-a-hf.pdf Size:98K _a-power

9N70
9N70

AP09N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching RDS(ON) 0.75? Ў Simple Drive Requirement ID 9A G Ў RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

1.15. ap09n70p-a.pdf Size:120K _a-power

9N70
9N70

AP09N70P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Ў 100% Avalanche Test BVDSS 650V D Ў Fast Switching RDS(ON) 0.75? GG Ў Simple Drive Requirement ID 9A S Ў RoHS Compliant S Description The TO-220 package is widely preferred for all commercial-industrial applications. The device is suited for DC-DC ,AC-DC converters for

1.16. ap09n70p-h-lf.pdf Size:64K _a-power

9N70
9N70

AP09N70P/R-H RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Rated D BVDSS 700V ▼ Fast Switching Characteristics RDS(ON) 0.85Ω ▼ Simple Drive Requirement ID 8.3A G S Description G AP09N70 series are specially designed as main switching devices for TO-220(P) D S universal 90~265VAC off-line AC/DC converter app

1.17. ap09n70r-a.pdf Size:201K _a-power

9N70
9N70

AP09N70R-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test D BVDSS 650V ▼ Fast Switching RDS(ON) 0.75Ω ▼ Simple Drive Requirement ID 9A G ▼ RoHS Compliant S Description AP09N70 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance an

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