10N70 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 10N70
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 200 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: TO-220F
TO-220F1
Búsqueda de reemplazo de 10N70 MOSFET
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10N70 datasheet
..1. Size:232K utc
10n70.pdf 
UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use
0.2. Size:219K utc
10n70kl-tf1-t 10n70kg-tf1-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 10N70K Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70K is an N-channel Power MOSFET using UTC s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc. The UTC 10N70K is generally applied in high efficient DC to DC converters, PWM motor controls and bridge cir
0.3. Size:243K utc
10n70l-tf1-t 10n70g-tf1-t 10n70l-tf2-t 10n70g-tf2-t 10n70l-tf3-t 10n70g-tf3-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 10N70 Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switchin
0.4. Size:189K ape
ap10n70p.pdf
AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applicati
0.5. Size:172K ape
ap10n70s.pdf
AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90 265VAC off-line AC/DC converter applications. TO-263 type provid
0.6. Size:189K ape
ap10n70p-a.pdf
AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applica
0.7. Size:59K ape
ap10n70i-a-hf.pdf
AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged
0.8. Size:127K ape
ap10n70i-a.pdf
AP10N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D TO-22
0.9. Size:102K ape
ap10n70p r-a-lf.pdf
AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 650V Fast Switching Characteristic RDS(ON) 0.62 Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90 265VAC off-line AC/DC converter applic
0.10. Size:222K ape
ap10n70w.pdf
AP10N70W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Avalanche Test D BVDSS 600V Fast Switching Characteristic RDS(ON) 0.6 Simple Drive Requirement ID 10A G S Description AP10N70 series are specially designed as main switching devices for universal 90 265VAC off-line AC/DC converter applications. The TO-3P type p
0.11. Size:291K sisemi
sif10n70c.pdf
Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF10N70C N- MOS / N-CHANNEL POWER MOSFET SIF10N70C
0.12. Size:2011K jilin sino
jcs10n70c jcs10n70b jcs10n70s jcs10n70f.pdf
N R N-CHANNEL MOSFET JCS10N70C Package MAIN CHARACTERISTICS ID 10A VDSS 700 V Rdson-max 1.10 @Vgs=10V Qg-typ 33.6nC APPLICATIONS High frequency switch mode power supply Electronic ballasts UPS UPS FEATURE
0.14. Size:664K cystek
mtn10n70ea.pdf
Spec. No. C725EA-A Issued Date 2010.06.18 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 770V @Tj=150 RDS(ON) 0.92 MTN10N70EA ID 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re
0.15. Size:348K crhj
cs10n70f a9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
0.16. Size:350K crhj
cs10n70 a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
0.17. Size:1248K cn wxdh
d10n70.pdf
D10N70 10A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.96 2 Features Fast switching ESD im
0.18. Size:1297K cn wxdh
f10n70.pdf
F10N70 10A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP)
0.19. Size:909K belling
bl10n70a-p bl10n70a-a.pdf
BL10N70A Power MOSFET 1 Description Step-Down Converter BL10N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS
0.20. Size:1134K belling
bl10n70-p bl10n70-a.pdf
BL10N70 Power MOSFET 1 Description Step-Down Converter BL10N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
0.21. Size:1390K maple semi
slp10n70c slf10n70c.pdf
SLP10N70C/SLF10N70C 700V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 10A, 700V, RDS(on) typ. = 0.9 @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 40nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching
0.22. Size:696K pipsemi
psp10n70 psa10n70.pdf
PSP10N70 PSA10N70 700V N-ch Planar MOSFET General Features BVDSS RDS(ON),typ. ID RoHS Compliant 700V 0.80 10A RDS(ON),typ.=0.80 @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode Applications Adaptor Charger G D S G D SMPS Standby Power S Ordering Information TO-220 TO-220F Part Number Package Brand
0.23. Size:653K samwin
sw10n70d swu10n70d.pdf
SW10N70D N-channel Enhanced mode TO-262 MOSFET Features TO-262 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charge, TV-Power 3 1 1. Gate 2. Drain 3. Source General Description 3 This power M
0.24. Size:722K samwin
swu10n70d.pdf
SW10N70D N-channel Enhanced mode TO-262 MOSFET Features TO-262 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 2 Application LED, Charger, TV-Power 3 1 1. Gate 2. Drain 3. Source General Description 3 This power
0.25. Size:905K samwin
swf10n70k swd10n70k.pdf
SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D
0.26. Size:946K samwin
sw10n70k swf10n70k swd10n70k.pdf
SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De
0.27. Size:2320K way-on
wml10n70d1 wmo10n70d1.pdf
WML10N70D1 WMO10N70D1 700V 10A 0.88 N-ch Power MOSFET Description TO-220F TO-252 WMOSTM D1 is Wayon s 1st generation VDMOS family that is dramatic reduction TAB in on-resistance and ultra-low gate charge for applications requiring high power density and high efficiency. And it is very D G robust and RoHS compliant. G S D S Features Typ.R =0.88 @V =10V DS(on) GS 1
0.28. Size:668K way-on
wmm10n70c4 wml10n70c4 wmo10n70c4 wmn10n70c4 wmp10n70c4 wmk10n70c4.pdf
WMM10N70C4, WML10N7 WM C4 70C4, MO10N70C WMN10N70C4, WMP10N7 WM C4 70C4, MK10N70C 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM
0.29. Size:660K way-on
wml10n70em wmk10n70em wmm10n70em wmn10n70em wmp10n70em wmo10n70em.pdf
WML10 WMK10N7 0N70EM, W 70EM, WMM10N70EM WMN10 WMP10N7 0N70EM, W 70EM, WMO10N70EM 700V 0.52 S T V Super Junction Power MOSFET Descrip ption WMOSTM EM is Wayon s 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re S D D G G G S D G T and low ga ce. WMOSTM EM is ate
0.30. Size:224K wuxi china
cs10n70fa9d.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9D VDSS 700 V General Description ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou
0.31. Size:350K wuxi china
cs10n70a8d.pdf
Silicon N-Channel Power MOSFET R CS10N70 A8D VDSS 700 V General Description ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25 ) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various
0.32. Size:387K wuxi china
cs10n70fa9r.pdf
Silicon N-Channel Power MOSFET R CS10N70F A9R General Description VDSS 700 V CS10N70F A9R, the silicon N-channel Enhanced ID 10 A PD(TC=25 ) 40 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.88 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various p
0.33. Size:2398K first semi
fir10n70fg.pdf
FIR10N70FG 700V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 37nC (Typ.). BVDSS=700V,ID=10A G DS RDS(on) 1.0 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Locati
0.34. Size:861K cn hmsemi
hm10n70f.pdf
VDSS 700 V General Description ID 10 A HM10N70F, the silicon N-channel Enhanced PD (TC=25 ) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturizati
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