All MOSFET. 10N70 Datasheet

 

10N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: 10N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 200 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO-220F_TO-220F1

10N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

10N70 Datasheet (PDF)

1.1. cs10n70fa9d.pdf Size:348K _update_mosfet

10N70
10N70

Silicon N-Channel Power MOSFET R ○ CS10N70F A9D VDSS 700 V General Description: ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.2. cs10n70a8d.pdf Size:350K _update_mosfet

10N70
10N70

Silicon N-Channel Power MOSFET R ○ CS10N70 A8D VDSS 700 V General Description: ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

 1.3. ssh10n70 ssh10n80.pdf Size:294K _samsung

10N70
10N70

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

1.4. 10n70.pdf Size:232K _utc

10N70
10N70

UNISONIC TECHNOLOGIES CO., LTD 10N70 Preliminary Power MOSFET 10A, 700V N-CHANNEL POWER MOSFET 1 ? DESCRIPTION TO-220F The UTC 10N70 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at

 1.5. ap10n70i-a.pdf Size:127K _a-power

10N70
10N70

AP10N70I-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ 100% Avalanche Test D BVDSS 650V ▼ Fast Switching Characteristic RDS(ON) 0.62Ω ▼ Simple Drive Requirement ID 10A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, low D TO-22

1.6. ap10n70p r-a-lf.pdf Size:102K _a-power

10N70
10N70

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching Characteristic RDS(ON) 0.62? Ў Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90~265VAC off-line AC/DC converter applications.

1.7. ap10n70i-a-hf.pdf Size:59K _a-power

10N70
10N70

AP10N70I-A-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching Characteristic RDS(ON) 0.62? Ў Simple Drive Requirement ID 10A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized dev

1.8. ap10n70p-a.pdf Size:189K _a-power

10N70
10N70

AP10N70R/P-A RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 650V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90~265VAC off-line AC/DC converter applications.B

1.9. ap10n70s.pdf Size:172K _a-power

10N70
10N70

AP10N70S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description AP10N70S is specially designed as main switching devices for universal G D 90~265VAC off-line AC/DC converter applications. TO-263 type provide high

1.10. ap10n70p.pdf Size:189K _a-power

10N70
10N70

AP10N70R/P RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description G AP10N70 series are specially designed as main switching devices for D TO-262(R) S universal 90~265VAC off-line AC/DC converter applications.Bot

1.11. ap10n70w.pdf Size:222K _a-power

10N70
10N70

AP10N70W RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў 100% Avalanche Test D BVDSS 600V Ў Fast Switching Characteristic RDS(ON) 0.6? Ў Simple Drive Requirement ID 10A G S Description AP10N70 series are specially designed as main switching devices for universal 90~265VAC off-line AC/DC converter applications. The TO-3P type provide

1.12. sif10n70c.pdf Size:291K _sisemi

10N70
10N70

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF10N70C N- MOS 管/ N-CHANNEL POWER MOSFET SIF10N70C

1.13. mtn10n70ea.pdf Size:664K _cystek

10N70
10N70

Spec. No. : C725EA-A Issued Date : 2010.06.18 CYStech Electronics Corp. Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS : 770V @Tj=150℃ RDS(ON) : 0.92Ω MTN10N70EA ID : 9.5A Description The MTN10N70EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

1.14. cs10n70f a9d.pdf Size:348K _crhj

10N70
10N70

Silicon N-Channel Power MOSFET R ○ CS10N70F A9D VDSS 700 V General Description: ID 10 A CS10N70F A9D, the silicon N-channel Enhanced PD (TC=25℃) 50 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

1.15. cs10n70 a8d.pdf Size:350K _crhj

10N70
10N70

Silicon N-Channel Power MOSFET R ○ CS10N70 A8D VDSS 700 V General Description: ID 10 A CS10N70 A8HD, the silicon N-channel Enhanced PD (TC=25℃) 130 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.78 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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