15N70 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 15N70
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 180 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.43 Ohm
   Paquete / Cubierta: TO-3P

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15N70 Datasheet (PDF)

..1. Size:194K utc
15n70.pdf

UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTCs advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can also withstand high energy pulse in the avalanche and commutation modes. The

0.1. Size:743K fairchild semi
fqaf15n70.pdf

April 2000TMQFETQFETQFETQFET 700V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 9.5A, 700V, RDS(on) = 0.56 @ VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 70 nC)planar stripe, DMOS technology. Low Crss ( typical 27 pF)This advanced technology has b

0.2. Size:148K ixys
ixth15n70.pdf

IXTH15N70 PCB24IXTH 15N70 VDSS = 700 VMegaMOSTMFET ID (cont) = 15 ARDS(on) = 0.45 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 700 VVDGR TJ = 25C to 150C; RGS = 1 M 700 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 T

0.3. Size:811K jilin sino
jcs15n70c jcs15n70f.pdf

N RN-CHANNEL MOSFET JCS15N70C Package MAIN CHARACTERISTICS ID 15.0 A VDSS 700 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS F

0.4. Size:1150K jilin sino
jcs15n70fc.pdf

N RN-CHANNEL MOSFET JCS15N70FC_K103 Package MAIN CHARACTERISTICS ID 15.0 A VDSS 710 V Rdson-max 0.55 @Vgs=10V Qg-typ 44.6 nC APPLICATIONS High frequency switching mode power supply Electronic ballast UPS UPS

0.5. Size:669K way-on
wml15n70c4 wmk15n70c4 wmm15n70c4 wmn15n70c4 wmp15n70c4 wmo15n70c4.pdf

WML1 MM15N70C15N70C4, WMK15N70C4, WM C4 WMN15N70C4, WMP15N70C4, WM C4 MO15N70C 700V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

0.6. Size:401K convert
cs15n70f.pdf

nvertSuzhou Convert Semiconductor Co ., Ltd.CS15N70F700V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS15N70F TO-220F CS15N70FAbsolute Ma

0.7. Size:1235K cn hmsemi
hms15n70d hms15n70k hms15n70f hms15n70b hms15n70 hms15n70i.pdf

HMS15N70K,HMS15N70I,HMS15N70HMS15N70F, HMS15N70D, HMS15N70B 700V N-Channel MOSFET FeaturesGeneral Description Features -15A, 700V, RDS(on) typ.= 0.3@VGS = 10 V This Power MOSFET is produced using H&M SemisAdvanced Super-Junction technology. - Low gate charge ( typical 43nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailore

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