All MOSFET. 15N70 Datasheet


15N70 MOSFET. Datasheet pdf. Equivalent

Type Designator: 15N70

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 180 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.43 Ohm

Package: TO-3P

15N70 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


15N70 Datasheet (PDF)

1.1. fqaf15n70.pdf Size:743K _fairchild_semi


April 2000 TM QFET QFET QFET QFET 700V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 9.5A, 700V, RDS(on) = 0.56 Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 70 nC) planar stripe, DMOS technology. • Low Crss ( typical 27 pF) This advanced technology has b

1.2. ixth15n70.pdf Size:148K _ixys


查询IXTH15N70供应商 捷多邦,专业PCB打样工厂,24小时加急出货 IXTH 15N70 VDSS = 700 V MegaMOSTMFET ID (cont) = 15 A Ω RDS(on) = 0.45 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 700 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 700 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 T

 1.3. 15n70.pdf Size:194K _utc


UNISONIC TECHNOLOGIES CO., LTD 15N70 Preliminary Power MOSFET 15A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N70 is an N-Channel enhancement MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. It can also withstand high energy pulse in the avalanche and commutation modes. The UT

Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .


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