8N65 Todos los transistores

 

8N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 8N65
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 147 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28 nC
   trⓘ - Tiempo de subida: 60.5 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
   Paquete / Cubierta: TO-220 TO-262 TO-220F TO-220F1

 Búsqueda de reemplazo de MOSFET 8N65

 

8N65 Datasheet (PDF)

 ..1. Size:220K  utc
8n65.pdf

8N65
8N65

UNISONIC TECHNOLOGIES CO., LTD 8N65 Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching application

 ..2. Size:228K  inchange semiconductor
8n65.pdf

8N65
8N65

INCHANGE Semiconductorisc N-Channel Mosfet Transistor 8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage- : V = 650V(Min)DSSStatic Drain-Source On-Resistance : R = 1.4(Max)DS(on)Avalanche Energy SpecifiedFast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh efficiency switch

 0.1. Size:984K  1
kps8n65f.pdf

8N65
8N65

KPS8N65FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description This Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentavalanche characteristics. It is mainly suitable for active power factorcorrection and switching mode power supplies.FEATURES VDSS=650V, ID=8ADrain

 0.2. Size:854K  st
stw88n65m5.pdf

8N65
8N65

STW88N65M5N-channel 650 V, 0.024 typ., 84 A, MDmesh V Power MOSFET in TO-247 packageDatasheet production dataFeaturesVDSS Order code@Tjmax. RDS(on) max. IDSTW88N65M5 710 V

 0.3. Size:1101K  st
stl38n65m5.pdf

8N65
8N65

STL38N65M5N-channel 650 V, 0.090 typ., 22.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet preliminary dataFeaturesVDS @ RDS(on) Order code IDS(2) Bottom viewTJmax maxS(2)S(2)G(1)STL38N65M5 710 V 0.105 22.5 A(1)D(3)1. The value is rated according to Rthj-case and limited by package. 100% avalanche testedPowerFLAT 8x8 HV

 0.4. Size:1235K  st
stb28n65m2 stf28n65m2 stp28n65m2 stw28n65m2.pdf

8N65
8N65

STB28N65M2, STF28N65M2,STP28N65M2, STW28N65M2N-channel 650 V, 0.15 typ., 20 A MDmesh M2 Power MOSFETsin DPAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - preliminary dataFeaturesTABOrder codes VDS RDS(on) max IDSTB28N65M233STF28N65M212650 V 0.18 20 A1STP28N65M2D2PAKTO-220FPSTW28N65M2TAB Extremely low gate charge Excellent output

 0.5. Size:1015K  st
stb18n65m5 std18n65m5.pdf

8N65
8N65

STB18N65M5, STD18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in DPAK and DPAK packagesDatasheet production dataFeaturesVDSS @ RDS(on) Order codes IDTABTJmax maxTABSTB18N65M5710 V

 0.6. Size:563K  st
stfu18n65m2.pdf

8N65
8N65

STFU18N65M2 N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Datasheet - production data Features Order code V R max I DS DS(on) DSTFU18N65M2 650 V 0.33 12 A Extremely low gate charge Excellent output capacitance (C ) profile oss 100% avalanche tested 321 Zener-protected TO-220FPApplication

 0.7. Size:795K  st
stf18n65m2.pdf

8N65
8N65

STF18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packageDatasheet - production dataFeaturesRDS(on) Order code VDS IDmaxSTF18N65M2 650 V 0.33 12 A Extremely low gate charge32 Excellent output capacitance (Coss) profile1 100% avalanche testedTO-220FP Zener-protectedApplications Switching applicationsF

 0.8. Size:1002K  st
ste88n65m5.pdf

8N65
8N65

STE88N65M5N-channel 650 V, 0.024 typ., 88 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - production dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE88N65M5 710 V 0.029 88 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performanceISOTOPTM 100% avalanche testedApplicationsFigure 1. Internal sch

 0.9. Size:525K  st
sti18n65m2 stp18n65m2.pdf

8N65
8N65

STI18N65M2, STP18N65M2N-channel 650 V, 0.275 typ., 12 A MDmesh M2 Power MOSFET in IPAK and TO-220 packagesDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABTABSTI18N65M2650V 0.33 12 ASTP18N65M23 32211 Extremely low gate chargeI2PAK TO-220 Excellent output capacitance (Coss) profile 100% avalanche tested Zener-prote

 0.10. Size:1239K  st
stb8n65m5 std8n65m5 stf8n65m5 sti8n65m5 stp8n65m5 stu8n65m5.pdf

8N65
8N65

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

 0.11. Size:704K  st
stl18n65m2.pdf

8N65
8N65

STL18N65M2N-channel 650 V, 0.290 typ., 8 A MDmesh M2 Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesVDS @ Order codesTJmax RDS(on) max IDSTL18N65M2 715 V 0.365 8 A Extremely low gate charge123 Excellent output capacitance (Coss) profile4 100% avalanche testedPowerFLAT 5x6 HV Zener-protectedApplicatio

 0.12. Size:1582K  st
stb38n65m5 stf38n65m5 stp38n65m5 stw38n65m5.pdf

8N65
8N65

STB38N65M5, STF38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 , 30 A MDmesh V Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTAB2 VDSS @ RDS(on) 3 Order code ID1 TJmax max32D2PAKSTB38N65M51TO-220FP STF38N65M5

 0.13. Size:1667K  st
stb38n65m5 stp38n65m5 stw38n65m5.pdf

8N65
8N65

STB38N65M5, STP38N65M5, STW38N65M5N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs in D2PAK, TO-220 and TO-247 packagesDatasheet - production dataFeaturesTABVDS @ RDS(on) 2Order codes ID3TJmax max1STB38N65M5D2PAKSTP38N65M5 710 V 0.095 30 ATABSTW38N65M5 Higher VDSS rating and high dv/dt capability33 Excellent switching performance

 0.14. Size:1026K  st
stl8n65m5.pdf

8N65
8N65

STL8N65M5N-channel 650 V, 0.56 , 7 A MDmesh VPower MOSFET in PowerFLAT 5x5FeaturesVDSS @ RDS(on) Order code IDTJmax max 765STL8N65M5 710 V

 0.15. Size:1298K  st
stb8n65m5 std8n65m5 stf8n65m5 stu8n65m5 stp8n65m5 sti8n65m5.pdf

8N65
8N65

STB8N65M5, STD8N65M5, STF8N65M5STI8N65M5, STP8N65M5, STU8N65M5N-channel 650 V, 0.56 , 7 A MDmesh V Power MOSFETin DPAK, IPAK, TO-220, TO-220FP, DPAK and IPAKFeaturesType VDSS @ TJmax RDS(on) max. ID3STB8N65M5133STD8N65M522DPAK1 1STF8N65M5TO-220710 V

 0.16. Size:1223K  st
stwa88n65m5.pdf

8N65
8N65

STW88N65M5 STWA88N65M5N-channel 650 V, 0.024 typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packagesDatasheet - production dataFeaturesVDSS Order codes@Tjmax. RDS(on) max. IDSTW88N65M5710 V 0.029 84 ASTWA88N65M5321 Worldwide best RDS(on) in TO-247TO-247 Higher VDSS ratingTO-247 long leads Higher dv/dt capability Ex

 0.17. Size:1535K  st
stl18n65m5.pdf

8N65
8N65

STL18N65M5N-channel 650 V, 0.215 typ., 15 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - preliminary dataFeaturesOrder code VDS RDS(on)max. IDSTL18N65M5 710 V 0.240 15 A(1)1. The value is rated according to Rthj-case and limited by package.1 Outstanding RDS(on)*area23 Extremely large avalanche performance4 Gate charge minimize

 0.18. Size:948K  st
stf18n65m5 sti18n65m5 stp18n65m5 stw18n65m5.pdf

8N65
8N65

STF18N65M5, STI18N65M5, STP18N65M5,STW18N65M5N-channel 650 V, 0.198 typ., 15 A MDmesh V Power MOSFET in TO-220FP, IPAK, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABVDSS @ RDS(on) Order code IDTJmax max3213STF18N65M5 21TO-220FPSTI18N65M5IPAK710 V

 0.19. Size:1223K  st
stw88n65m5 stwa88n65m5.pdf

8N65
8N65

STW88N65M5 STWA88N65M5N-channel 650 V, 0.024 typ., 84 A, MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packagesDatasheet - production dataFeaturesVDSS Order codes@Tjmax. RDS(on) max. IDSTW88N65M5710 V 0.029 84 ASTWA88N65M5321 Worldwide best RDS(on) in TO-247TO-247 Higher VDSS ratingTO-247 long leads Higher dv/dt capability Ex

 0.20. Size:953K  st
stw78n65m5.pdf

8N65
8N65

STW78N65M5Automotive-grade N-channel 650 V, 0.024 typ., 69 A, MDmesh V Power MOSFET in a TO-247 packageDatasheet - production dataFeatures Order code VDS @Tjmax. RDS(on) max. IDSTW78N65M5 710 V 0.032 69 A Designed for automotive applications and AEC-Q101 qualified32 Higher VDSS rating1 Higher dv/dt capabilityTO-247 Excellent switching performan

 0.21. Size:1256K  st
stfw38n65m5.pdf

8N65
8N65

STF38N65M5, STFW38N65M5N-channel 650 V, 0.073 typ., 30 A MDmesh V Power MOSFETs in TO-220FP and TO-3PF packagesDatasheet - production dataFeaturesOrder codes VDS@ TJmax RDS(on) max IDSTF38N65M5710 V 0.095 30 ASTFW38N65M511132 Higher VDSS rating and high dv/dt capability13TO-220FP Excellent switching performance21 100% avalanche teste

 0.22. Size:249K  toshiba
tk28n65w5.pdf

8N65
8N65

TK28N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK28N65W5TK28N65W5TK28N65W5TK28N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 115 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.11 (typ.) by used to Super Junction Str

 0.23. Size:246K  toshiba
tk28n65w.pdf

8N65
8N65

TK28N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK28N65WTK28N65WTK28N65WTK28N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.094 (typ.) by used to Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) E

 0.24. Size:165K  vishay
sihp28n65e.pdf

8N65
8N65

SiHP28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37

 0.25. Size:144K  vishay
sihg28n65e.pdf

8N65
8N65

SiHG28N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.122 Reduced switching and conduction lossesQg max. (nC) 140 Ultra low gate charge (Qg)Qgs (nC) 21 Avalanche energy rated (UIS)Qgd (nC) 37

 0.26. Size:450K  diodes
dmg8n65sct.pdf

8N65
8N65

DMG8N65SCT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance BVDSS RDS(ON) Package TC = +25C High BVDSS Rating for Power Application TO220AB 650V 1.3@VGS = 10V 8A Low Input/Output Leakage (Type TH) Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 0.27. Size:2335K  infineon
ika08n65h5.pdf

8N65
8N65

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA08N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA08N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 0.28. Size:3302K  infineon
ika08n65et6.pdf

8N65
8N65

IKA08N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

 0.29. Size:2321K  infineon
ikp08n65h5.pdf

8N65
8N65

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 0.30. Size:2334K  infineon
ika08n65f5.pdf

8N65
8N65

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

 0.31. Size:2321K  infineon
ikp08n65f5.pdf

8N65
8N65

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP08N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP08N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

 0.32. Size:2018K  infineon
ikp28n65es5.pdf

8N65
8N65

IKP28N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked

 0.33. Size:113K  ixys
ixth48n65x2.pdf

8N65
8N65

Advance Technical InformationX2-Class VDSS = 650VIXTH48N65X2Power MOSFET ID25 = 48A RDS(on) 68m N-Channel Enhancement ModeAvalanche RatedTO-247GDSymbol Test Conditions Maximum RatingsSD (Tab)VDSS TJ = 25C to 150C 650 VG = Gate D = DrainVDGR TJ = 25C to 150C, RGS = 1M 650 VS = Source Tab = DrainVGSS Continu

 0.34. Size:238K  ixys
ixta8n65x2 ixtp8n65x2 ixty8n65x2.pdf

8N65
8N65

Preliminary Technical InformationX2-Class VDSS = 650VIXTY8N65X2Power MOSFET ID25 = 8AIXTA8N65X2 RDS(on) 500m IXTP8N65X2N-Channel Enhancement ModeTO-252 (IXTY)G SSymbol Test Conditions Maximum RatingsD (Tab)VDSS TJ = 25C to 150C 650 VTO-263 (IXTA)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VG

 0.35. Size:116K  ixys
ixtp8n65x2m.pdf

8N65
8N65

Advance Technical InformationX2-Class VDSS = 650VIXTP8N65X2MPower MOSFET ID25 = 4A RDS(on) 550m (Electrically Isolated Tab)N-Channel Enhancement ModeOVERMOLDEDSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 650 VVDGR TJ = 25C to 150C, RGS = 1M 650 VGDSVGSS Continuous 30 VVGSM Transient 40 V

 0.36. Size:336K  ixys
ixfa18n65x2 ixfp18n65x2 ixfh18n65x2.pdf

8N65
8N65

X2-Class HiPerFETTM VDSS = 650VIXFA18N65X2Power MOSFET ID25 = 18AIXFP18N65X2 RDS(on) 200m IXFH18N65X2N-Channel Enhancement ModeAvalanche RatedTO-263(IXFA)GSD (Tab)Symbol Test Conditions Maximum RatingsTO-220VDSS TJ = 25C to 150C 650 V(IXFP)VDGR TJ = 25C to 150C, RGS = 1M 650 VVGSS Continuous 30 VVGS

 0.37. Size:176K  utc
18n65.pdf

8N65
8N65

UNISONIC TECHNOLOGIES CO., LTD 18N65 Power MOSFET 18A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N65 uses UTCs advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) 0.5 @VGS =

 0.38. Size:202K  utc
8n65kl-tf3t-t 8n65kg-tf3t-t 8n65kl-tm3-t 8n65kg-tm3-t 8n65kl-tms-t 8n65kg-tms-t 8n65kl-tn3-r 8n65kg-tn3-r.pdf

8N65
8N65

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

 0.39. Size:202K  utc
8n65kl-ta3-t 8n65kg-ta3-t 8n65kl-tf3-t 8n65kg-tf3-t 8n65kl-tf1-t 8n65kg-tf1-t 8n65kl-tf2-t 8n65kg-tf2-t.pdf

8N65
8N65

UNISONIC TECHNOLOGIES CO., LTD 8N65K-MTQ Power MOSFET 8A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N65K-MTQ is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching

 0.40. Size:301K  jiangsu
cjb08n65.pdf

8N65
8N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263-2L Plastic-Encapsulate MOSFETS CJB08N65 N-Channel Power MOSFET TO-263-2L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig

 0.41. Size:393K  jiangsu
cjpf08n65.pdf

8N65
8N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF08N65 N-Channel Power MOSFET TO-220F GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high s

 0.42. Size:474K  jiangsu
cjp08n65.pdf

8N65
8N65

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate MOSFETS CJP08N65 N-Channel Power MOSFET TO-220-3L GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, hig

 0.43. Size:386K  kec
kp8n65d.pdf

8N65
8N65

KP8N65D/ISEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KP8N65DThis Super Junction MOSFET has better characteristics, such as fastswitching time, low on resistance, low gate charge and excellentA KDIM MILLIMETERSLavalanche characteristics. It is mainly suitable for active power factorC D_A 6.60 + 0.20_B 6.10 + 0.20correctio

 0.44. Size:443K  aosemi
aok18n65.pdf

8N65
8N65

AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.45. Size:359K  aosemi
aotf18n65.pdf

8N65
8N65

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.46. Size:359K  aosemi
aotf18n65l.pdf

8N65
8N65

AOTF18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOTF18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.47. Size:443K  aosemi
aok18n65l.pdf

8N65
8N65

AOK18N65650V,18A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOK18N65 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 18Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 0.48. Size:154K  aosemi
aot8n65.pdf

8N65
8N65

AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.49. Size:154K  aosemi
aotf8n65.pdf

8N65
8N65

AOT8N65/AOTF8N65650V, 8A N-Channel MOSFETGeneral Description Product Summary VDS750V@150The AOT8N65 & AOTF8N65 have been fabricated usingan advanced high voltage MOSFET process that is ID (at VGS=10V) 8Adesigned to deliver high levels of performance and RDS(ON) (at VGS=10V)

 0.50. Size:253K  sisemi
sif18n65c.pdf

8N65
8N65

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF18N65CN- MOS / N-CHANNEL POWER MOSFET SIF18N65CN- MOS / N-CHA

 0.51. Size:1248K  jilin sino
jcs8n65v jcs8n65r jcs8n65c jcs8n65f jcs8n65s jcs8n65b.pdf

8N65
8N65

N RN-CHANNEL MOSFET JCS8N65C MAIN CHARACTERISTICS Package 88888888 8ID .0 A VDSS 650 V Rdson-max1.35 @Vgs=10V Qg-typ 32 nC APPLICATIONS High frequency switching mode power supply Electronic ballast LED

 0.52. Size:250K  cystek
mtn8n65ea.pdf

8N65
8N65

Spec. No. : C727EA Issued Date : 2010.12.22 CYStech Electronics Corp.Revised Date : 2010.12.29 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.1(typ.) MTN8N65EA ID : 7.5A Description The MTN8N65EA is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-re

 0.53. Size:237K  cystek
mtn8n65e3.pdf

8N65
8N65

Spec. No. : C727E3 Issued Date : 2010.08.09 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) : 1.2(typ.) MTN8N65E3 ID : 7.5A Description The MTN8N65E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance a

 0.54. Size:326K  cystek
mtn8n65fi.pdf

8N65
8N65

Spec. No. : C727FI Issued Date : 2012.09.26 CYStech Electronics Corp.Revised Date : 2015.03.16 Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS 650VMTN8N65FI ID @ VGS=10V, TC=25C 7.5A 1.2 RDSON(TYP) @ VGS=10V, ID=3.75A Description The MTN8N65FI is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, r

 0.55. Size:364K  cystek
mtn8n65fp.pdf

8N65
8N65

Spec. No. : C727FP Issued Date : 2009.06.23 CYStech Electronics Corp.Revised Date : 2012.10.08 Page No. : 1/11 N-Channel Enhancement Mode Power MOSFETBVDSS : 650V RDS(ON) :1.2(typ.) MTN8N65FP ID : 7.5A Description The MTN8N65FP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-r

 0.56. Size:434K  silikron
ssf8n65.pdf

8N65
8N65

SSF8N65 Features VDSS = 650V Extremely high dv/dt capability ID = 8A Low Gate Charge Qg results in Simple Drive Requirement Rdson = 0.95 (typ.) 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Description The SSF8N65 is a new generation of high voltage NChannel enhancement mod

 0.57. Size:1275K  inpower semi
ita08n65r.pdf

8N65
8N65

ITA08N65R N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 650V 0.86 8A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND ITA08N65R TO-220F IPS Absolute M

 0.58. Size:1085K  blue-rocket-elect
brfl8n65.pdf

8N65
8N65

BRFL8N65 Rev.E Nov.-2017 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficien

 0.59. Size:979K  blue-rocket-elect
brf8n65.pdf

8N65
8N65

BRF8N65(BRCS8N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for hi

 0.60. Size:354K  crhj
cs8n65f a9h.pdf

8N65
8N65

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.61. Size:355K  crhj
cs8n65 a0h.pdf

8N65
8N65

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.62. Size:347K  crhj
cs8n65 a8h.pdf

8N65
8N65

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.63. Size:147K  jdsemi
cm8n65f.pdf

8N65
8N65

RCM8N65F www.jdsemi.cnShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET 650V N-Channel VDMOS RoHS

 0.64. Size:579K  first silicon
ftk8n65p f dd.pdf

8N65
8N65

SEMICONDUCTORFTK8N65P / F / DDTECHNICAL DATA8.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul

 0.65. Size:384K  silan
svf8n65rmj svf8n65rdtr.pdf

8N65
8N65

SVF8N65RD(MJ) 8A650V N SVF8N65RD(MJ) N MOS 2 F-CellTM VDMOS 1

 0.66. Size:452K  silan
svf18n65efjh.pdf

8N65
8N65

SVF18N65EFJH 18A, 650V N 2SVF18N65EFJH N MOS F-CellTM VDMOS 1 3

 0.67. Size:634K  silan
svf18n65f svf18n65t svf18n65pn.pdf

8N65
8N65

SVF18N65F/T/PN 18A650V N SVF18N65F/T/PN N MOS F-CellTM VDMOS AC-DC

 0.68. Size:429K  silan
svf8n65t svf8n65f.pdf

8N65
8N65

SVF8N65T/F 8A650V N SVF8N65T/F N MOS F-CellTM VDMOS AC-D

 0.69. Size:467K  ruichips
ru18n65p.pdf

8N65
8N65

RU18N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/18A, RDS (ON) =410m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversi

 0.70. Size:215K  winsemi
wff8n65l.pdf

8N65
8N65

WFF8N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD8.0A,650V,R (Max1.4)@V =10V DS(on) GS Ultra-low Gate charge(Typical 14.5nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produce

 0.71. Size:695K  winsemi
wff8n65b.pdf

8N65
8N65

WFF8N65BWFF8N65BWFF8N65BWFF8N65BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 7.5A,650V,R (Max1.3)@V =10VDS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150)General

 0.72. Size:308K  winsemi
wfj8n65b.pdf

8N65
8N65

WFJ8N65BSilicon N-Channel MOSFETFeatures 7.5A,650V,R (Max1.3)@V =10VDS(on) GS Ultra-low Gate charge(Typical 25nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage (V =4000V AC)ISO Maximum Junction Temperature Range(150) General Description This Power MOSFET is produced using Winsemi's advanced planar stripe, VDMOS technology. this late

 0.73. Size:970K  feihonltd
fhp8n65a fhf8n65a.pdf

8N65
8N65

N N-CHANNEL MOSFET FHP8N65A /FHF8N65A MAIN CHARACTERISTICS FEATURES ID 8A Low gate charge VDSS 650V Crss ( 5.5pF) Low Crss (typical 5.5pF ) Rdson-typ @Vgs=10V 1.0 Fast switching Qg-typ 24nC 100% 100% avalanche tested dv/dt Impr

 0.74. Size:126K  hy
hy8n65t.pdf

8N65
8N65

HY8N65T / HY8N65FT650V / 8A650V, RDS(ON)=1.4@VGS=10V, ID=4.0AN-Channel Enhancement Mode MOSFETFeatures Low ON Resistance Fast Switching Low Gate Charge & Low CRSS Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charger and SMPS112 2 In compliance with EU RoHs 2002/95/EC Directives G G33DDSS

 0.75. Size:1072K  jiaensemi
jfpc8n65c.pdf

8N65
8N65

JFPC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 0.76. Size:1066K  jiaensemi
jffc8n65c.pdf

8N65
8N65

JFFC8N65C 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 0.77. Size:861K  jiaensemi
jfpc18n65c jffc18n65c.pdf

8N65
8N65

JFFC18N65C JFPC18N65C 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A, 650V, RDS(on)typ. = 0.45@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge(40nC) technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching perf

 0.78. Size:740K  jiaensemi
jfpc8n65d.pdf

8N65
8N65

JFPC8N65D 650V N-Channel MOSFET General Description This Power MOSFET is produced using advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s

 0.79. Size:488K  jiaensemi
jfpc18n65ci.pdf

8N65
8N65

JFPC18N65CI 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using advanced - 18A , 650V, RDS(on)typ. = 0.60@VGS = 10 V planar stripe DMOS technology. This advanced - Low gate charge technology has been especially tailored to minimize - High ruggedness on-state resistance, provide superior switching - Fast switching performance, and wit

 0.80. Size:361K  maple semi
slp8n65c slf8n65c.pdf

8N65
8N65

SLP8N65C/SLF8N65C650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 7.5A, 650V, RDS(on) typ. = 1.2@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 29nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp

 0.81. Size:569K  pipsemi
ptp08n65 pta08n65.pdf

8N65
8N65

PTP08N65PTA08N65N-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Typ.) ID Adaptor Charger650 V 0.85 8 A SMPS Power Supply LCD Panel PowerDFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveGGGOrdering InformationDSDS TO-220FTO-220 SPART NUMBER PACKAGE

 0.82. Size:654K  samwin
swt38n65k2.pdf

8N65
8N65

SW38N65K2 N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 79m Low RDS(ON) (Typ 79m)@VGS=10V Low Gate Charge (Typ 71nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: Charger, LED , Servicer, UPS 1. Gate 2. Drain 3. Source 3 General Description This

 0.83. Size:675K  samwin
swu8n65k.pdf

8N65
8N65

SW8N65K N-channel Enhanced mode TO-262 MOSFET Features BVDSS : 650V TO-262 ID : 8A High ruggedness Low RDS(ON) (Typ 0.53)@VGS=10V RDS(ON) : 0.53 Low Gate Charge (Typ 20nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 Application:LED,Charger,PC Power 2 3 1. Gate 2. Drain 3. Source 1 3 General Description This power MOS

 0.84. Size:1171K  samwin
swp8n65d swi8n65d swd8n65d swf8n65d swnx8n65d.pdf

8N65
8N65

SW8N65D N-channel Enhanced mode TO-220/TO-251/TO-252/TO-220F/TO-251NX MOSFET BVDSS : 650V Features TO-220 TO-251 TO-252 TO-220F TO-251NX ID : 8A High ruggedness RDS(ON) : 1.1 Low RDS(ON) (Typ 1.1)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 1 1 1 100% Avalanche Tested 1 2 2 2 2 2 3 3 3 3 Application:Charg

 0.85. Size:612K  samwin
swt38n65k.pdf

8N65
8N65

SW38N65K N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 0.09)@VGS=10V RDS(ON) :0.09 Low Gate Charge (Typ 96nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 1 3 Application:ChargerLEDUPSServicer 1. Gate 2. Drain 3. Source 3 General Description

 0.86. Size:860K  samwin
swt38n65k2f swx38n65k2f.pdf

8N65
8N65

SW38N65K2F N-channel Enhanced mode TO-247/TO-220FB MOSFET Features TO-247 TO-220FB BVDSS : 650V ID : 38A High ruggedness Low RDS(ON) (Typ 83m)@VGS=10V RDS(ON) : 83m Low Gate Charge (Typ 71nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 2 2 1 3 3 Application: Charge, LED , Servicer, UPS 1. Gate 2. Drain 3. Source Gener

 0.87. Size:564K  samwin
swmn8n65la.pdf

8N65
8N65

SW8N65LA N-channel Enhanced mode TO-220SF MOSFET Features TO-220SF BVDSS : 650V ID : 8A High ruggedness Low RDS(ON) (Typ 0.6)@VGS=10V RDS(ON) : 0.6 Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED, Charger, PC Power 1. Gate 2. Drain 3. Source 3 General Description This po

 0.88. Size:707K  samwin
sw38n65kf swt38n65kf.pdf

8N65
8N65

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charge, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This p

 0.89. Size:1132K  samwin
sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf

8N65
8N65

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS : 650V TO-251 TO-252 TO-220F TO-262N ID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application:LED, Charge, PC Power 3 3 3 3 1

 0.90. Size:932K  samwin
swf18n65d swt18n65d.pdf

8N65
8N65

SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 18A High ruggedness RDS(ON) : 0.35 Low RDS(ON) (Typ 0.35)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 3 1 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source 3 Gen

 0.91. Size:621K  samwin
sw18n65d swf18n65d swt18n65d.pdf

8N65
8N65

SW18N65D N-channel Enhanced mode TO-220F/TO-247 MOSFET TO-220F TO-247 BVDSS : 650V Features ID : 18A High ruggedness RDS(ON) : 0.35 Low RDS(ON) (Typ 0.35)@VGS=10V Low Gate Charge (Typ 79nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 2 3 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 Gene

 0.92. Size:621K  samwin
swt38n65kf.pdf

8N65
8N65

SW38N65KF N-channel Enhanced mode TO-247 MOSFET TO-247 BVDSS : 650V Features ID : 38A High ruggedness RDS(ON) : 95m Low RDS(ON) (Typ 95m)@VGS=10V Low Gate Charge (Typ 99nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application:LED, UPS, Charger, Servicer 1 1. Gate 2. Drain 3. Source General Description 3 This

 0.93. Size:1066K  samwin
swi8n65db swd8n65db swf8n65db swj8n65db.pdf

8N65
8N65

SW8N65DBN-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFETFeatures BVDSS : 650VTO-251 TO-252TO-220F TO-262NID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC)2 Improved dv/dt Capability 1 100% Avalanche Tested 11 12 22 2 Application:LED, Charger, PC Power3 33 311. Gate 2. Drain

 0.94. Size:202K  semihow
hfd8n65u.pdf

8N65
8N65

Jan 2014BVDSS = 650 VRDS(on) typ HFD8N65U / HFU8N65U ID = 6.0 A650V N-Channel MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHFD8N65U HFU8N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 n

 0.95. Size:676K  semihow
hfw8n65u.pdf

8N65
8N65

Jan 2013BVDSS = 650 VRDS(on) typ HFW8N65U / HFI8N65U ID = 7.5 A650V N-Channel MOSFETD2-PAK I2-PAKFEATURES Originative New Design Superior Avalanche Rugged TechnologyHFW8N65U HFI8N65U Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Ext

 0.96. Size:198K  semihow
hfp8n65u.pdf

8N65
8N65

March 2013BVDSS = 650 VRDS(on) typ HFP8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FEATURES Originative New Design Superior Avalanche Rugged Technology 123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 0.97. Size:192K  semihow
hfp8n65s.pdf

8N65
8N65

Sep 2009BVDSS = 650 VRDS(on) typ HFP8N65SID = 7.2 A650V N-Channel MOSFETTO-220FEATURES Originative New Design 123 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Extended Safe Operating Area Lower RDS(O

 0.98. Size:307K  semihow
hfs8n65u.pdf

8N65
8N65

March 2013BVDSS = 650 VRDS(on) typ HFS8N65U ID = 7.5 A650V N-Channel MOSFETTO-220FFEATURES Originative New Design Superior Avalanche Rugged Technology123 Robust Gate Oxide Technology 1.Gate 2. Drain 3. Source Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22.0 nC (Typ.) Extended Safe Operating Area

 0.99. Size:249K  semihow
hfs8n65s.pdf

8N65
8N65

Sep 2009BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 22 nC (Typ.) Unrivalled Gate Charge : 22 nC (Typ ) E

 0.100. Size:736K  semihow
hfs8n65sa.pdf

8N65
8N65

August 2022BVDSS = 650 VRDS(on) typ = 1.16 HFS8N65SAID = 7.2 A650V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 21 nC (Typ.) Extended Safe O

 0.101. Size:596K  semihow
hfs8n65js.pdf

8N65
8N65

Mar. 2023HFS8N65JS650V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Superior Avalanche Rugged TechnologyBVDSS 650 V Robust Gate Oxide Technology Very Low Intrinsic CapacitancesID 7.2 A Excellent Switching CharacteristicsRDS(on), Typ 1.04 100% Avalanche TestedQg, Typ 25.3 nC RoHS CompliantTO-220FS SymbolSDGAbsolute Maximum

 0.102. Size:1169K  truesemi
tsp8n65m tsf8n65m.pdf

8N65
8N65

TSP8N65M/TSF8N65M650V N-Channel MOSFETGeneral DescriptionFeaturesThis Power MOSFET is produced using Truesemis 7.5A,650V,Max.RDS(on)=1.50 @ VGS =10Vadvanced planar stripe DMOS technology.This advanced technology has been especially tailored to Low gate charge(typical 29nC)minimize on-state resistance, provide superior switching High ruggednessperformance, an

 0.103. Size:673K  way-on
wml28n65f2 wmk28n65f2 wmn28n65f2 wmm28n65f2 wmj28n65f2.pdf

8N65
8N65

WML28N65F2, WM F2 MK28N65FWMN2 N65F2, WM F2 28N65F2, WMM28N MJ28N65F 650V 0.15 S TV Super Junction Power MOSFETDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sS D D G GG S D G SJ-MOSFE while of an extremely fa body ET fferin

 0.104. Size:668K  way-on
wml08n65em wmk08n65em wmm08n65em wmn08n65em wmp08n65em wmo08n65em.pdf

8N65
8N65

WML08 WMK08N68N65EM, W 65EM, WMM08N65EM WMN08 WMP08N68N65EM, W 65EM, WMO08N65EM 650V 0.8 S unction Power M TV Super Ju MOSFETDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is a

 0.105. Size:673K  way-on
wml28n65c4 wmk28n65c4 wmn28n65c4 wmm28n65c4 wmj28n65c4.pdf

8N65
8N65

WML28N6 WM C4 65C4, MK28N65CWMN2 MJ28N65C28N65C4, WMM28N65C4, WM C4 650V 0.13 S TV Super Junction Power MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G and low ga charge performanc WMOSTM C4 is ate c

 0.106. Size:708K  way-on
wml18n65em wmk18n65em wmm18n65em wmn18n65em wmp18n65em wmo18n65em.pdf

8N65
8N65

WML18 WMK18N68N65EM, W 65EM, WMM18N65EM WMN18 WMP18N68N65EM, W 65EM, WMO18N65EM 650V Super Ju MOSFETV 0.24 S unction Power M TDescripptionWMOSTM EM is Wayons 3rd generation super W n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reS D D G GG S D G Tand low ga ce. WMOSTM EM is

 0.107. Size:664K  way-on
wmm08n65c4 wml08n65c4 wmo08n65c4 wmn08n65c4 wmp08n65c4 wmk08n65c4.pdf

8N65
8N65

WMM0 65C4, MO08N65C08N65C4, WML08N6 WM C4 WMN0 65C4, MK08N65C08N65C4, WMP08N6 WM C4 650V 0.65 S unction Power M TSuper Ju MOSFETDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc

 0.108. Size:355K  wuxi china
cs8n65a0h.pdf

8N65
8N65

Silicon N-Channel Power MOSFET R CS8N65 A0H General Description VDSS 650 V CS8N65 A0H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 110 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

 0.109. Size:347K  wuxi china
cs8n65a8h.pdf

8N65
8N65

Silicon N-Channel Power MOSFET R CS8N65 A8H General Description VDSS 650 V CS8N65 A8H, the silicon N-channel Enhanced ID 8 A VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25) 110 W RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power swi

 0.110. Size:234K  wuxi china
cs8n65fa9h.pdf

8N65
8N65

Silicon N-Channel Power MOSFET R CS8N65F A9H General Description VDSS 650 V CS8N65F A9H, the silicon N-channel Enhanced ID 8 A PD(TC=25) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.9 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

 0.111. Size:6318K  desay
dm8n65c.pdf

8N65
8N65

 0.112. Size:428K  convert
cs8n65f cs8n65p cs8n65d cs8n65f-b.pdf

8N65
8N65

CS8N65F,CS8N65P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N65D,CS8N65F-B650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N65F TO

 0.113. Size:443K  convert
cs8n60f cs8n60p cs8n60u cs8n60d cs8n65f-b.pdf

8N65
8N65

CS8N60F,CS8N60P, nvertSuzhou Convert Semiconductor Co ., Ltd.CS8N60U,CS8N60D,CS8N65F-B600V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS

 0.114. Size:648K  convert
cs8n65f cs8n65p.pdf

8N65
8N65

nvertSuzhou Convert Semiconductor Co ., Ltd. CS8N65F,CS8N65P650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS8N65F TO-220F CS8N65FCS8N65P

 0.115. Size:3949K  first semi
fir8n65fg.pdf

8N65
8N65

FIR8N65FG650V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=28nC (Typ.). BVDSS=650V,ID=7AG RDS(on) : 1.30 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Y = YearA = Assembly LocationWW = W

 0.116. Size:2574K  first semi
fir18n65fg.pdf

8N65
8N65

FIR18N65FG650V N-Channel MOSFET-D . PIN Connection TO-220FFeatures 18A, 650V, RDS(on) = 380m @VGS = 10 V Low gate charge ( typical 38nC)G D S Low Crss ( typical 6.2pF) Fast switchingSchematic diagram 100% avalanche tested D Improved dv/dt capability G S Marking DiagramY = YearA = Assembly LocationYAWWVTWW = Work WeekFIR18N65FVT =

 0.117. Size:867K  huake
smf8n65.pdf

8N65
8N65

SMF8N65650V N-Channnel MOSFETFeatures 8.0A, 650V, R =1.1@V =10VDS(on)(Typ) GS Low Gate Charge Low Crss 100% Avalanche Tested Fast Switching Improved dv/dt CapabilityApplication: High Frequency Switching Mode Power Supply Active Power Factor CorrectionAbsolute Maximum Ratings(Tc=25C unless otherwise noted)Symbol Parameter Value

 0.118. Size:6056K  cn puolop
ptf8n65.pdf

8N65
8N65

PTF8 N6565 0V/8 A N-Channel A dv anced Power MOSFETFeatures RDS(on) (Typical 0.9 )@VGS=10V Improved dv/dt Capability, High Ruggedness 100% Avalanche Tested Maximum Junction Temperature Range (150C)G D STO-220FAbsolute Maximum RatingsStresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above t

 0.119. Size:539K  cn sino-ic
se8n65a.pdf

8N65
8N65

Mar 2015SE8N65AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V = 650VDSlow gate charge. It can be used in a wide R = 1.085 @ V =10VDS(ON) GSvariety of applicationPin configurationsSee Diagram belowTO-220FAbsolute Maximum Rati

 0.120. Size:1406K  cn sps
smirf8n65.pdf

8N65
8N65

SMIRF8N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

 0.121. Size:827K  cn vbsemi
vbzmb18n65.pdf

8N65
8N65

VBZMB18N65www.VBsemi.comN-Channel 650V (D-S) MOSFETPRODUCT SUMMARYFEATURESVDS (V) at TJ max. 650 Reduced trr, Qrr, and IRRMRDS(on) max. () at 25 C VGS = 10 V 0.50 Low figure-of-merit (FOM) Ron x QgQg max. (nC) Low input capacitance (Ciss)71Qgs (nC) 14 Low switching losses due to reduced Qrr Ultra low gate charge (Qg)Qgd (nC) 33 Avalanche ener

 0.122. Size:538K  cn wuxi unigroup
tma8n65h tmc8n65h tmd8n65h tmu8n65h.pdf

8N65
8N65

TMA8N65H, TMC8N65H,TMD8N65H, TMU8N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA

 0.123. Size:933K  cn hmsemi
hms8n65 hms8n65f hms8n65d.pdf

8N65
8N65

HMS8N65D, HMS8N65, HMS8N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applic

 0.124. Size:797K  cn hmsemi
hms8n65k hms8n65i.pdf

8N65
8N65

HMS8N65I, HMS8N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 540 m gate charge. This super junction MOSFET fits the industrys ID 8 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power applications.

 0.125. Size:792K  cn hmsemi
hms28n65 hms28n65d hms28n65f.pdf

8N65
8N65

HMS28N65/HMS28N65D/HMS28N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and ind

 0.126. Size:676K  cn hmsemi
hms28n65t.pdf

8N65
8N65

HMS28N65TN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 110 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 28 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power appli

 0.127. Size:405K  cn haohai electr
h8n65p h8n65f.pdf

8N65
8N65

8N65 SeriesN-Channel MOSFET7.5A, 650V, N H FQP8N65C H8N65P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs8N65FQPF8N65C H8N65F F: TO-220FP8N65 Series Pin AssignmentFeaturesID=7.5AOriginative New Design

 0.128. Size:378K  inchange semiconductor
aok18n65.pdf

8N65
8N65

isc N-Channel MOSFET Transistor AOK18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 0.129. Size:252K  inchange semiconductor
aotf18n65.pdf

8N65
8N65

isc N-Channel MOSFET Transistor AOTF18N65FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =650V(Min)DSSStatic Drain-Source On-Resistance: R =0.39(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.130. Size:190K  inchange semiconductor
stp8n65m5.pdf

8N65
8N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP8N65M5FEATURESHigher V ratingDSSExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 0.131. Size:185K  inchange semiconductor
stf18n65m5.pdf

8N65
8N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF18N65M5FEATURESHigher V ratingDSSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 0.132. Size:261K  inchange semiconductor
aot8n65.pdf

8N65
8N65

isc N-Channel MOSFET Transistor AOT8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 0.133. Size:208K  inchange semiconductor
std18n65m5.pdf

8N65
8N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD18N65M5FEATURESHigher V ratingDSSExcellent switching performance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSS

 0.134. Size:201K  inchange semiconductor
stf8n65m5.pdf

8N65
8N65

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STF8N65M5FEATURESExcellent switching performanceEasy to drive100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 650 VDSSV Gate-

 0.135. Size:252K  inchange semiconductor
aotf8n65.pdf

8N65
8N65

isc N-Channel MOSFET Transistor AOTF8N65FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.15(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 0.136. Size:261K  inchange semiconductor
dmg8n65sct.pdf

8N65
8N65

isc N-Channel MOSFET Transistor DMG8N65SCTFEATURESDrain Current I = 8.0A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
Back to Top

 


8N65
  8N65
  8N65
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top