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 ..1. Size:172K  utc
 9n65.pdf

UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in

 0.1. Size:346K  1
 fch099n65s3.pdf

FCH099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced

 0.2. Size:408K  1
 crjq99n65g2.pdf

CRJQ99N65G2 ( ) SJMOS N-MOSFET 650V, 81m , 35A Features Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650V RDS(on)_typ Better efficiency due to very low FOM 81m ID 35A Applications 100% DVDS Tested 100% DVDS Tested LED/LCD/PDP TV and monitor Lighting 100% Avalanche Test

 0.3. Size:156K  international rectifier
 irfb9n65apbf.pdf

PD - 95416 IRFB9N65APbF SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) 650V 0.93 8.5A l Uninterruptible Power Supply l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and TO-22

 0.4. Size:102K  international rectifier
 irfb9n65a.pdf

PD - 91815C SMPS MOSFET IRFB9N65A HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 8.5A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curre

 0.5. Size:457K  st
 stfu9n65m2.pdf

STFU9N65M2 Datasheet N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads package Features VDS RDS(on) max. ID Order code STFU9N65M2 650 V 0.90 5 A Extremely low gate charge 3 Excellent output capacitance (COSS) profile 2 1 100% avalanche tested TO-220FP Zener-protected ultra narrow leads D(2) Applications Switching

 0.6. Size:666K  st
 stfw69n65m5 stw69n65m5.pdf

STFW69N65M5 STW69N65M5 N-channel 650 V, 0.037 typ., 58 A MDmesh V Power MOSFET in TO-3PF and TO-247 packages Datasheet - production data Features Order codes VDSS @ TJmax RDS(on) max ID STFW69N65M5 710 V

 0.7. Size:965K  st
 sty139n65m5.pdf

STY139N65M5 N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in Max247 package Datasheet production data Features VDS Order code @TjMAX RDS(on) max ID STY139N65M5 710 V 0.017 130 A Max247 worldwide best RDS(on) Higher VDSS rating 3 2 Higher dv/dt capability 1 Excellent switching performance Max247 Easy to drive 100% avalanche tes

 0.8. Size:1015K  st
 ste139n65m5.pdf

STE139N65M5 N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package Datasheet - preliminary data Features Order code VDS @Tjmax RDS(on) max ID STE139N65M5 710 V 0.017 W 130 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performance ISOTOP 100% avalanche tested Applications Figure 1. Internal schem

 0.9. Size:1169K  st
 stl19n65m5.pdf

STL19N65M5 N-channel 650 V, 0.215 typ., 12.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV package Datasheet - production data Features Order code VDS RDS(on)max. ID S(3) S(3) STL19N65M5 710 V 0.240 12.5 A(1) S(3) G(1) 1. The value is rated according to Rthj-case and limited by package. D(2) Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt ca

 0.10. Size:1352K  st
 std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB RDS(on) Order codes VDS max ID 3 1 DPAK STD9N65M2 3 2 1 STF9N65M2 650 V 0.9 5 A STP9N65M2 TO-220FP TAB STU9N65M2 TAB Extremely low gate charge 3 2 Excellent output capacit

 0.11. Size:783K  st
 stw69n65m5-4.pdf

STW69N65M5-4 N-channel 650 V, 0.037 typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Datasheet - production data Features RDS(on) Order code VDS @ TJmax max ID STW69N65M5-4 710 V 0.045 58 A Higher VDS rating 4 3 Higher dv/dt capability 2 1 Excellent switching performance thanks to the extra driving source pin TO247-4 Easy to drive 100% aval

 0.12. Size:248K  toshiba
 tk49n65w.pdf

TK49N65W MOSFETs Silicon N-Channel MOS (DTMOS ) TK49N65W TK49N65W TK49N65W TK49N65W 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Low drain-source on-resistance RDS(ON) = 0.048 (typ.) by using Super Junction Structure DTMOS (2) Easy to control Gate switching (3) Enh

 0.13. Size:249K  toshiba
 tk49n65w5.pdf

TK49N65W5 MOSFETs Silicon N-Channel MOS (DTMOS ) TK49N65W5 TK49N65W5 TK49N65W5 TK49N65W5 1. Applications 1. Applications 1. Applications 1. Applications Switching Voltage Regulators 2. Features 2. Features 2. Features 2. Features (1) Fast reverse recovery time trr = 145 ns (typ.) (2) Low drain-source on-resistance RDS(ON) = 0.051 (typ.) by using Super Junction Stru

 0.14. Size:223K  vishay
 sihfb9n65a.pdf

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu

 0.15. Size:223K  vishay
 irfb9n65a sihfb9n65a.pdf

IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement Available RDS(on) ( )VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 48 COMPLIANT Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 19 and Current Configu

 0.16. Size:226K  diodes
 dmg9n65ct.pdf

DMG9N65CT Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for Power Application TC = +25 C Low Input/Output Leakage 650V 1.3 @ VGS = 10V TO-220AB 9.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

 0.17. Size:407K  diodes
 dmg9n65cti.pdf

DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(ON) Package TC = +25 C High BVDss Rating for Power Application 650V 1.3 @ VGS = 10V ITO-220AB 9.0A Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

 0.18. Size:1996K  infineon
 ikp39n65es5.pdf

IKP39N65ES5 High speed switching series 5 th generation TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full rated current RAPID 1 fast and soft anti parallel diode C Features and Benefits High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V CEsat 650V breakdown voltage G Low Q G E IGBT copacked

 0.19. Size:376K  onsemi
 fcp099n65s3.pdf

FCP099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advanced

 0.20. Size:308K  onsemi
 fcpf099n65s3.pdf

FCPF099N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge VDSS RDS(ON) MAX ID MAX balance technology for outstanding low on-resistance and lower gate 650 V 99 mW @ 10 V 30 A charge performance. This advance

 0.21. Size:286K  onsemi
 fcb199n65s3.pdf

FCB199N65S3 MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 14 A, 199 mW Description www.onsemi.com SUPERFET III MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advance technology is tailored

 0.22. Size:323K  onsemi
 fcb099n65s3.pdf

MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 30 A, 99 mW FCB099N65S3 Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored

 0.23. Size:347K  onsemi
 fcmt099n65s3.pdf

FCMT099N65S3 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 30 A, 99 mW Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate VDSS RDS(ON) MAX ID MAX charge performance. This advanced technology is tailored t

 0.24. Size:286K  analog power
 am9n65p.pdf

Analog Power AM9N65P N-Channel 650-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) ( ) VDS (V) ID(A) Low r trench technology DS(on) 1.7 @ VGS = 10V Low thermal impedance 650 9a 1.8 @ VGS = 6V Fast switching speed Typical Applications Off-line Power Supplies Electronic Ballasts DRAIN connected High Power LED Lighting to TAB ABSOLUTE

 0.25. Size:1294K  cn wxdh
 d9n65.pdf

D9N65 9A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 9.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =1.

 0.26. Size:461K  ruichips
 ru9n65p.pdf

RU9N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/9A, RDS (ON) =750m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion in

 0.27. Size:596K  samwin
 swt69n65k2.pdf

SW69N65K2 N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS 650V ID 69A High ruggedness Low RDS(ON) (Typ 32m ) RDS(ON) 32m Low Gate Charge (Typ 181nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is pro

 0.28. Size:612K  samwin
 swt69n65k2f.pdf

SW69N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS 650V ID 69A High ruggedness Low RDS(ON) (Typ 35m ) RDS(ON) 35m Low Gate Charge (Typ 184nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is pr

 0.29. Size:315K  ubiq
 qm09n65f.pdf

QM09N65F 1 2011-03-08 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM09N65F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 1.1 9 A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N65F m

 0.30. Size:309K  ubiq
 qm09n65p.pdf

QM09N65P 1 2011-03-08 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM09N65P is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 1.1 9 A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N65P m

 0.31. Size:306K  ubiq
 qm09n65b.pdf

QM09N65B 1 2011-03-08 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM09N65B is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 650V 1.1 9 A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N65B m

 0.32. Size:1203K  way-on
 wmo9n65d1.pdf

WMO9N65D1 650V 9A 0.85 N-ch Power MOSFET Description TO-252 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power D G density and high efficiency. And it is very S robust and RoHS compliant. Features Typ.R =0.85 @V =10V DS(on) GS 100% avalanche tested Pb-

 0.33. Size:403K  convert
 cs9n65f cs9n65d.pdf

nvert Suzhou Convert Semiconductor Co ., Ltd. CS9N65F, CS9N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS9N65F TO-220F CS9N65F CS9N6

 0.34. Size:1785K  first semi
 fir9n65lg.pdf

FIR9N65LG 9A 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-252(D-PAK) FIR9N65LG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and D cell structure have been especially tailored to minimize on-state resistance, provide superior switching

 0.35. Size:1005K  cn hmsemi
 hms29n65 hms29n65d hms29n65f.pdf

HMS29N65/HMS29N65D/HMS29N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 2 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

 0.36. Size:361K  inchange semiconductor
 fch099n65s3.pdf

isc N-Channel MOSFET Transistor FCH099N65S3 FEATURES With TO-247 packaging Drain Source Voltage- V 650V DSS Static drain-source on-resistance RDS(on) 99m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 0.37. Size:206K  inchange semiconductor
 fcp099n65s3.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP099N65S3 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RAT

 0.38. Size:256K  inchange semiconductor
 fcpf099n65s3.pdf

isc N-Channel MOSFET Transistor FCPF099N65S3 FEATURES With TO-220 packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 0.39. Size:258K  inchange semiconductor
 fcb199n65s3.pdf

Isc N-Channel MOSFET Transistor FCB199N65S3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 0.40. Size:285K  inchange semiconductor
 irfb9n65a.pdf

iscN-Channel MOSFET Transistor IRFB9N65A FEATURES Low drain-source on-resistance RDS(ON) =0.93 (MAX) Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU

 0.41. Size:261K  inchange semiconductor
 dmg9n65ct.pdf

isc N-Channel MOSFET Transistor DMG9N65CT FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 0.42. Size:252K  inchange semiconductor
 dmg9n65cti.pdf

isc N-Channel MOSFET Transistor DMG9N65CTI FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 1.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp