UNISONIC TECHNOLOGIES CO., LTD 9N65 Preliminary Power MOSFET 9A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N65 is an N-channel mode power MOSFET using UTCsadvanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in

FCH099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advanced

CRJQ99N65G2() SJMOS N-MOSFET 650V, 81m, 35AFeatures Product Summary CRM(CQ) Super_Junction technology Much lower Ron*A performance for On-state efficiency VDS 650VRDS(on)_typ Better efficiency due to very low FOM 81mID35AApplications100% DVDS Tested100% DVDS Tested LED/LCD/PDP TV and monitor Lighting100% Avalanche Test

PD - 95416IRFB9N65APbFSMPS MOSFETHEXFET Power MOSFETApplicationsVDSS RDS(on) max IDl Switch Mode Power Supply (SMPS)650V 0.93 8.5Al Uninterruptible Power Supplyl High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andTO-22

PD - 91815CSMPS MOSFETIRFB9N65AHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 650V 0.93 8.5A High Speed Power SwitchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Curre

STFU9N65M2DatasheetN-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFET in a TO-220FP ultra narrow leads packageFeaturesVDS RDS(on) max. IDOrder codeSTFU9N65M2 650 V 0.90 5 A Extremely low gate charge3 Excellent output capacitance (COSS) profile21 100% avalanche testedTO-220FP Zener-protectedultra narrow leadsD(2)Applications Switching

STFW69N65M5 STW69N65M5N-channel 650 V, 0.037 typ., 58 A MDmesh V Power MOSFETin TO-3PF and TO-247 packagesDatasheet - production dataFeaturesOrder codes VDSS @ TJmax RDS(on) max IDSTFW69N65M5710 V

STY139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in Max247 packageDatasheet production dataFeaturesVDS Order code@TjMAX RDS(on) max IDSTY139N65M5 710 V 0.017 130 A Max247 worldwide best RDS(on) Higher VDSS rating32 Higher dv/dt capability1 Excellent switching performanceMax247 Easy to drive 100% avalanche tes

STE139N65M5N-channel 650 V, 0.014 typ., 130 A, MDmesh V Power MOSFET in a ISOTOP packageDatasheet - preliminary dataFeatures Order code VDS @Tjmax RDS(on) max IDSTE139N65M5 710 V 0.017 W 130 A Very low RDS(on) Higher VDSS rating Higher dv/dt capability Excellent switching performanceISOTOP 100% avalanche testedApplicationsFigure 1. Internal schem

STL19N65M5N-channel 650 V, 0.215 typ., 12.5 A MDmesh V Power MOSFET in a PowerFLAT 8x8 HV packageDatasheet - production dataFeatures Order code VDS RDS(on)max. IDS(3)S(3)STL19N65M5 710 V 0.240 12.5 A(1)S(3)G(1)1. The value is rated according to Rthj-case and limited by package.D(2) Worldwide best RDS(on) * area Higher VDSS rating and high dv/dt ca

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit

STW69N65M5-4N-channel 650 V, 0.037 typ., 58 A, MDmesh V Power MOSFET in a TO247-4 packageDatasheet - production dataFeaturesRDS(on) Order code VDS @ TJmax max IDSTW69N65M5-4 710 V 0.045 58 A Higher VDS rating43 Higher dv/dt capability21 Excellent switching performance thanks to the extra driving source pinTO247-4 Easy to drive 100% aval

TK49N65WMOSFETs Silicon N-Channel MOS (DTMOS)TK49N65WTK49N65WTK49N65WTK49N65W1. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Low drain-source on-resistance: RDS(ON) = 0.048 (typ.) by using Super Junction Structure : DTMOS(2) Easy to control Gate switching(3) Enh

TK49N65W5MOSFETs Silicon N-Channel MOS (DTMOS)TK49N65W5TK49N65W5TK49N65W5TK49N65W51. Applications1. Applications1. Applications1. Applications Switching Voltage Regulators2. Features2. Features2. Features2. Features(1) Fast reverse recovery time: trr = 145 ns (typ.)(2) Low drain-source on-resistance: RDS(ON) = 0.051 (typ.) by using Super Junction Stru

IRFB9N65A, SiHFB9N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650Requirement AvailableRDS(on) ()VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 48COMPLIANTRuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 19and CurrentConfigu

IRFB9N65A, SiHFB9N65AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 650Requirement AvailableRDS(on) ()VGS = 10 V 0.93 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 48COMPLIANTRuggednessQgs (nC) 12 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 19and CurrentConfigu

DMG9N65CT GreenN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Input Capacitance ID V(BR)DSS RDS(ON) Package High BVDss rating for Power Application TC = +25C Low Input/Output Leakage 650V 1.3 @ VGS = 10V TO-220AB 9.0 A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descripti

DMG9N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low Input Capacitance V(BR)DSS RDS(ON) Package TC = +25C High BVDss Rating for Power Application 650V 1.3 @ VGS = 10V ITO-220AB 9.0A Low Input/Output Leakage Lead-Free Finish; RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description

IKP39N65ES5High speed switching series 5 th generationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full ratedcurrent RAPID 1 fast and soft anti parallel diodeCFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low VCEsat 650V breakdown voltageG Low QGE IGBT copacked

FCP099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advanced

FCPF099N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWDescription www.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargeVDSS RDS(ON) MAX ID MAXbalance technology for outstanding low on-resistance and lower gate650 V 99 mW @ 10 V 30 Acharge performance. This advance

FCB199N65S3MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 14 A, 199 mWDescriptionwww.onsemi.comSUPERFET III MOSFET is ON Semiconductors brand-new highvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advance technology is tailored

MOSFET Power, N-Channel,SUPERFET III, Easy Drive650 V, 30 A, 99 mWFCB099N65S3DescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored

FCMT099N65S3Power MOSFET, N-Channel,SUPERFET) III, Easy Drive,650 V, 30 A, 99 mWDescriptionSUPERFET III MOSFET is ON Semiconductors brand-new highwww.onsemi.comvoltage super-junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on-resistance and lower gateVDSS RDS(ON) MAX ID MAXcharge performance. This advanced technology is tailored t

Analog Power AM9N65PN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID(A) Low r trench technology DS(on)1.7 @ VGS = 10V Low thermal impedance 6509a1.8 @ VGS = 6V Fast switching speed Typical Applications: Off-line Power Supplies Electronic Ballasts DRAIN connected High Power LED Lighting to TAB ABSOLUTE

D9N659A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 9.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)=1.

RU9N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/9A, RDS (ON) =750m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion in

SW69N65K2 N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 69A High ruggedness Low RDS(ON) (Typ 32m) RDS(ON) : 32m Low Gate Charge (Typ 181nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is pro

SW69N65K2F N-channel Enhanced mode TO-247 MOSFET Features TO-247 BVDSS : 650V ID : 69A High ruggedness Low RDS(ON) (Typ 35m) RDS(ON) : 35m Low Gate Charge (Typ 184nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 3 Application:Charger,LED,PC Power 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is pr

QM09N65F 1 2011-03-08 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM09N65F is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 1.1 9 Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N65F m

QM09N65P 1 2011-03-08 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM09N65P is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 1.1 9 Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N65P m

QM09N65B 1 2011-03-08 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM09N65B is the highest performance N-ch MOSFETs with specialized high voltageBVDSS RDSON ID technology, which provide excellent RDSON and 650V 1.1 9 Agate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM09N65B m

WMO9N65D1650V 9A 0.85 N-ch Power MOSFETDescriptionTO-252WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerDGdensity and high efficiency. And it is verySrobust and RoHS compliant.Features Typ.R =0.85@V =10VDS(on) GS 100% avalanche tested Pb-

nvertSuzhou Convert Semiconductor Co ., Ltd.CS9N65F, CS9N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS9N65F TO-220F CS9N65FCS9N6

FIR9N65LG9A 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-252(D-PAK)FIR9N65LG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTMhigh-voltage planar VDMOS technology. The improved process and Dcell structure have been especially tailored to minimize on-state resistance, provide superior switching

HMS29N65/HMS29N65D/HMS29N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 96 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 2 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and indu

isc N-Channel MOSFET Transistor FCH099N65S3FEATURESWith TO-247 packagingDrain Source Voltage-: V 650VDSSStatic drain-source on-resistance:RDS(on) 99m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP099N65S3FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RAT

isc N-Channel MOSFET Transistor FCPF099N65S3FEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Isc N-Channel MOSFET Transistor FCB199N65S3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

iscN-Channel MOSFET Transistor IRFB9N65AFEATURESLow drain-source on-resistance:RDS(ON) =0.93 (MAX)Enhancement mode:Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching Voltage RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc N-Channel MOSFET Transistor DMG9N65CTFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

isc N-Channel MOSFET Transistor DMG9N65CTIFEATURESDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 1.3(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp