15N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 15N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 312 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 295 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-247 TO-220F TO-220F2
Búsqueda de reemplazo de 15N65 MOSFET
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15N65 datasheet
15n65.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high
15n65.pdf
isc N-Channel MOSFET Transistor 15N65 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.78 (Max) DS(on) Fast Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Switch regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
stb15n65m5 std15n65m5.pdf
STB15N65M5, STD15N65M5 Datasheet N-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packages Features TAB TAB VDS @ RDS(on) max. ID Order code TJmax 3 2 2 1 3 STB15N65M5 1 710 V 0.34 11 A D2PAK DPAK STD15N65M5 Extremely low RDS(on) D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval
std15n65m5.pdf
STB15N65M5, STD15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max TAB STB15N65M5 TAB 710 V
stb15n65.pdf
STB15N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB15N25 250 V
stf15n65m5 stfi15n65m5 stp15n65m5.pdf
STF15N65M5, STFI15N65M5, STP15N65M5 N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages Datasheet production data Features VDS @ RDS(on) Order codes ID TJmax max 3 2 1 STF15N65M5 TO-220FP STFI15N65M5 710 V
fdp15n65 fdpf15n65.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia
fda15n65.pdf
January 2007 TM UniFET FDA15N65 650V N-Channel MOSFET Features Description 16A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especially tailor
fdp15n65 fdpf15n65ydtu.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia
sihf15n65e.pdf
SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U
sihp15n65e.pdf
SiHP15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Available Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (U
sihb15n65e.pdf
SiHB15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.28 Reduced switching and conduction losses Qg max. (nC) 96 Ultra low gate charge (Qg) Qgs (nC) 11 Avalanche energy rated (UIS) Qgd (nC) 21
ika15n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKA15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
ikp15n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKP15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparal
ika15n65et6.pdf
IKA15N65ET6 TRENCHSTOP IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode C Features and Benefits Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 3 s Trench and field-stop technology for 650V applications offers G very tight parameter distribution E high rugg
ikb15n65eh5.pdf
IKB15N65EH5 High speed switching series 5th generation TRENCHSTOPTM 5 high speed switching IGBT copacked with full rated current RAPID 1 anti parallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low Q G E IGBT copacked with full rated current RAPID 1 fas
spa15n65c3.pdf
SPA15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-31 Type Package Marking SPA15N65C3 PG-TO220-3-31 15N65C3 Maximum ratings, at T =
spi15n65c3.pdf
SPI15N65C3 C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features 650 V DS R 'AH 93E7 5 3C97 0.28 W DS(on) max R IEC7?7 6G 6E C3E76 6 nC g typ R #;9 B73= 5FCC7@E 53B34;>;EJ R , F3>;8;76 for industrial grade applications 355AC6;@9 EA % R +4 8C77 >736 B>3E;@9 - A#. 5A?B>;3@E; Halogen free mold compound TO 262 1 ;;8!#& 01>53 10 2;= R ) AE74AA= 63BE7C Type Package Mar
igb15n65s5.pdf
IGB15N65S5 High speed switching series fifth generation TRENCHSTOPTM 5 high speed soft switching IGBT Features and Benefits C High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal current CEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q E G Maxim
spp15n65c3.pdf
SPP15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-1 CoolMOS C3 designed for Notebook Adapter Type Package Marking SPP15N65C3
ika15n65f5.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKA15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparal
ikp15n65h5.pdf
IGBT High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft antiparallel diode IKP15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft antiparallel diode C
ixyp15n65c3d1.pdf
Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25 C to 175 C 650 V VCGR
ixyp15n65c3.pdf
Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3 GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR TJ = 25 C to 175 C, RGE = 1M 650 V G C Tab
ixyp15n65c3d1m.pdf
Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3D1M GenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab) tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 175 C 650 V VCGR
ixya15n65c3d1.pdf
Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25 C to 175 C 650 V VCGR
fdp15n65 fdpf15n65.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia
15n65l-t47-t 15n65g-t47-t 15n65l-ta3-t 15n65g-ta3-t 15n65l-tc3-t 15n65g-tc3-t 15n65l-tf1-t 15n65g-tf1-t.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en
15n65l-tf2-t 15n65g-tf2-t 15n65l-tf3-t 15n65g-tf3-t 15n65l-tq2-t 15n65g-tq2-t 15n65l-tq2-r 15n65g-tq2-r.pdf
UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en
jcs15n65fei jcs15n65bei jcs15n65sei jcs15n65cei.pdf
N R N-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
jcs15n65fh.pdf
N R N-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge
brf15n65.pdf
BRF15N65(BRCS15N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Crss 100 dv/dt Low gate charge, Low Crss ,Fast switching,100% avalanche tested, Improved dv/dt capability. / Appl
fhp15n65a fhf15n65a.pdf
N N-CHANNEL MOSFET FHP15N65A /FHF15N65A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 650V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ @Vgs=10V 0.46 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv
ost15n65krf.pdf
OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost15n65drf.pdf
OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost15n65frf.pdf
OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
ost15n65prf.pdf
OST15N65PRF Enhancement Mode N-Channel Power IGBT General Description OST15N65PRF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog
swf15n65d.pdf
SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 650V Features ID 15A High ruggedness RDS(ON) 0.57 Low RDS(ON) (Typ 0.57 )@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow
swmn15n65j swd15n65j.pdf
SW15N65J N-channel Enhanced mode TO-220SF/TO-252 MOSFET Features TO-220SF TO-252 BVDSS 650V High ruggedness ID 15A Low RDS(ON) (Typ 0.22 )@VGS=10V RDS(ON) 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application LED , Charger, PC Power 3 3 1 1. Gate 2. Drain 3. Source General Description This p
sw15n65d swf15n65d.pdf
SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS 650V Features ID 15A High ruggedness RDS(ON) 0.57 Low RDS(ON) (Typ 0.57 )@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow
wml15n65c4 wmk15n65c4 wmm15n65c4 wmn15n65c4 wmp15n65c4 wmo15n65c4.pdf
WML1 MM15N65C 15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFET V 0.26 Super Junction Descrip ption WMOSTM C4 is Wa 4th generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C4
wml15n65f2 wmk15n65f2 wmm15n65f2 wmn15n65f2 wmp15n65f2 wmo15n65f2.pdf
WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65F N15N65F2, N65F2, WM F2 650V Super Ju MOSFET V 0.29 S unction Power M T Descrip ption WMOSTM F2 is Wa 2nd generation super ayon s junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f s D S D G G G S D G SJ-MOSFE while of an extr
wml15n65c2 wmk15n65c2 wmm15n65c2 wmn15n65c2 wmp15n65c2 wmo15n65c2.pdf
WML1 MM15N65C 15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFET V 0.32 Super Junction Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-re D S D G G G S D G and low ga charge performanc WMOSTM C2
jjt15n65ss.pdf
650V 15A Trench and Field Stop IGBT JJT15N65SS Key performance V =650V CE TO-220F I =15A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. 10 s short circuit capability. G C E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant
jjt15n65sg.pdf
650V 15A Trench and Field Stop IGBT JJT15N65SG Key performance TO-220A V =650V CE I =15A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant
jjt15n65sc.pdf
650V 15A Trench and Field Stop IGBT JJT15N65SC Key performance TO-263 V =650V CE I =15A@T =100 C C V =1.6 V CE(sat) C Features G High ruggedness performance. E 10 s short circuit capability. Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.
jjt15n65sy.pdf
650V 15A Trench and Field Stop IGBT JJT15N65SY Key performance TO-220 V =650V CE I =15A@T =100 C C V =1.6 V CE(sat) Features High ruggedness performance. G C 10 s short circuit capability. E Positive V temperature coefficient. CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.
spf15n65t1t1tl.pdf
SPF15N65T1T1TL 650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150 C High breakdown voltage up to 650V for I 15 A C improved reliability V I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat
spd15n65t1t0tl.pdf
SPD15N65T1T0TL 650V /15A Tren ch Field Stop IGBT V 650 V CE Features I 15 A C Max Junction Temperature 150 C High breakdown voltage up to 650V for V I =15A 1.65 V CE(SAT) C improved reliability Short Circuit Rated Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli
spf15n65t1t2tl.pdf
SPF15N65T1T2TL 650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150 C High breakdown voltage up to 650V for I 15 A C improved reliability V I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat
dgw15n65ctl.pdf
DGW15N65CTL RoHS COMPLIANT IGBT Descrete V 650 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temp
dgp15n65ctl.pdf
RoHS DGP15N65CTL COMPLIANT IGBT Descrete V 650 V CE I 15 A C V I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, te
hms15n65a.pdf
HMS15N65A N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industry s ID 1 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features
hms15n65i hms15n65k.pdf
HMS15N65I / HMS15N65K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial
hms15n65 hms15n65f hms15n65d.pdf
HMS15N65D, HMS15N65, HMS15N65F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industry s ID 15 A AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power ap
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf
MPBX15N65EF 650V-15A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution G C TO-220 E Type Marking Package Code C MPBP15N65EF MP15N65EF TO-220-3 MPBA15N65EF MP15N
spd15n65t1.pdf
SPD15N65T1 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application
spt15n65t1.pdf
SPT15N65T1 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application
ygf15n65t2 ygk15n65t2 ygp15n65t2.pdf
YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175 C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications
spa15n65c3.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPA15N65C3 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET
Otros transistores... 7N65 , 7N65Z , 7N65K , 8N65 , 9N65 , 10N65 , 10N65Z , 10N65K , 5N60 , 18N65 , 20N65 , 22N65 , 1N65A , 1N65 , 2N65 , 2N65L , 2N65Z .
History: IRFH8324PBF
History: IRFH8324PBF
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