15N65 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. Italso can withstand high

isc N-Channel MOSFET Transistor 15N65FEATURESDrain Current I = 15A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.78(Max)DS(on)Fast SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONSwitch regulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

STB15N65M5, STD15N65M5DatasheetN-channel 650 V, 0.308 typ., 11 A MDmesh M5 Power MOSFETs in D2PAK and DPAK packagesFeaturesTABTABVDS @RDS(on) max. IDOrder codeTJmax32213STB15N65M51710 V 0.34 11 AD2PAK DPAKSTD15N65M5 Extremely low RDS(on)D(2, TAB) Low gate charge and input capacitance Excellent switching performance 100% aval

STL15N65M5N-channel 650 V, 0.335 typ., 10 A MDmesh V Power MOSFET in a PowerFLAT 5x6 HV packageDatasheet - production dataFeaturesOrder code VDSS RDS(on) max IDSTL15N65M5 710 V

STB15N65M5, STD15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in D2PAK and DPAK packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax maxTABSTB15N65M5TAB710 V

STB15N25N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORPRELIMINARY DATATYPE V R IDSS DS(on) DSTB15N25 250 V

STF15N65M5, STFI15N65M5, STP15N65M5N-channel 650 V, 0.308 typ., 11 A MDmesh V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packagesDatasheet production dataFeaturesVDS @ RDS(on) Order codes IDTJmax max321STF15N65M5TO-220FPSTFI15N65M5 710 V

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

January 2007TMUniFETFDA15N65 650V N-Channel MOSFETFeatures Description 16A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especially tailor

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

SiHF15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (U

SiHP15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700Available Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesAvailableQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (U

SiHB15N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.28 Reduced switching and conduction lossesQg max. (nC) 96 Ultra low gate charge (Qg)Qgs (nC) 11 Avalanche energy rated (UIS)Qgd (nC) 21

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA15N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA15N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKP15N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP15N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

IKA15N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

IKB15N65EH5High speed switching series 5th generationTRENCHSTOPTM 5 high speed switching IGBT copacked with full ratedcurrent RAPID 1 anti parallel diodeCFeatures and Benefits:High speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies 650V breakdown voltageG Low QGE IGBT copacked with full rated current RAPID 1 fas

SPA15N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Low gate chargeR 0.28DS(on),max Extreme dv/dt ratedQ 63 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220-3-31Type Package MarkingSPA15N65C3 PG-TO220-3-31 15N65C3Maximum ratings, at T =

SPI15N65C3CIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 650 VDSR 'AH 93E7 5:3C97 0.28 WDS(on) maxR IEC7?7 6G 6E C3E76 6 nCg typR #;9: B73= 5FCC7@E 53B34;>;EJR , F3>;8;76 for industrial grade applications 355AC6;@9 EA % R +4 8C77 >736 B>3E;@9 - A#. 5A?B>;3@E; Halogen free mold compoundTO262 1 ;;8!#& 01>53:10 2;=R ) AE74AA= 63BE7CType Package Mar

IGB15N65S5High speed switching series fifth generationTRENCHSTOPTM 5 high speed soft switching IGBTFeatures and Benefits: CHigh speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.35V at nominal currentCEsat Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maxim

SPP15N65C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 650 VDS Low gate chargeR 0.28DS(on),max Extreme dv/dt ratedQ 63 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO220-3-1CoolMOS C3 designed for: Notebook AdapterType Package MarkingSPP15N65C3

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKA15N65F5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKA15N65F5High speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparal

IGBTHigh speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1fast and soft antiparallel diodeIKP15N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKP15N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1fast and soft antiparallel diodeC

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA15N65C3D1GenX3TM w/Diode IC110 = 15AIXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEC (Tab)VCES TJ = 25C to 175C 650 VVCGR

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3GenX3TM IC110 = 15A VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR TJ = 25C to 175C, RGE = 1M 650 VGCTab

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYP15N65C3D1MGenX3TM w/Diode IC110 = 9A VCE(sat) 2.5V (Electrically Isolated Tab)tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingOVERMOLDED TO-220Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 VVCGR

Preliminary Technical InformationXPTTM 650V IGBT VCES = 650VIXYA15N65C3D1GenX3TM w/Diode IC110 = 15AIXYP15N65C3D1 VCE(sat) 2.5V tfi(typ) = 28nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-263 AA (IXYA)GSymbol Test Conditions Maximum RatingsEC (Tab)VCES TJ = 25C to 175C 650 VVCGR

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET usingUTCs advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high en

N RN-CHANNEL MOSFET JCS15N65EI Package MAIN CHARACTERISTICS ID 15A VDSS 650V Rdson-max 0.52 Vgs=10V Qg-Typ 52.3nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

N RN-CHANNEL MOSFET JCS15N65H MAIN CHARACTERISTICS Package ID 15.0 A VDSS 650 V Rdson-Max 0.55 @Vgs=10V Qg-Typ 35.2 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge

BRF15N65(BRCS15N65FL) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220FL N MOS N-CHANNEL MOSFET in a TO-220FL Plastic Package. / Features Crss100 dv/dt Low gate charge, Low Crss ,Fast switching,100% avalanche tested, Improved dv/dt capability. / Appl

N N-CHANNEL MOSFET FHP15N65A /FHF15N65A MAIN CHARACTERISTICS FEATURES ID 15A Low gate charge VDSS 650V Crss ( 16pF) Low Crss (typical 16pF ) Rdson-typ@Vgs=10V 0.46 Fast switching Qg-typ 50nC 100% 100% avalanche tested dv/dt Improved dv

OST15N65KRF Enhancement Mode N-Channel Power IGBT General Description OST15N65KRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST15N65DRF Enhancement Mode N-Channel Power IGBT General Description OST15N65DRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST15N65FRF Enhancement Mode N-Channel Power IGBT General Description OST15N65FRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST15N65PRF Enhancement Mode N-Channel Power IGBT General Description OST15N65PRF uses advanced Oriental-Semis patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CEperformance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 15A High ruggedness RDS(ON) : 0.57 Low RDS(ON) (Typ 0.57)@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow

SW15N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 15A Low RDS(ON) (Typ 0.22)@VGS=10VRDS(ON) : 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:LED , Charger, PC Power 3311. Gate 2. Drain 3. SourceGeneral DescriptionThis p

SW15N65D N-channel Enhanced mode TO-220F MOSFET TO-220F BVDSS : 650V Features ID : 15A High ruggedness RDS(ON) : 0.57 Low RDS(ON) (Typ 0.57)@VGS=10V Low Gate Charge (Typ 57nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charge, PC Power 1. Gate 2. Drain 3. Source 3 General Description This pow

WML1 MM15N65C15N65C4, WMK15N65C4, WM C4 WMN15N65C4, WMP15N65C4, WM C4 MO15N65C 650V n Power MOSFETV 0.26 Super JunctionDescripptionWMOSTM C4 is Wa 4th generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C4

WML N65F2, WM F2 L15N65F2, WMK15N MM15N65F WMN , WMP15N MO15N65FN15N65F2, N65F2, WM F2 650V Super Ju MOSFETV 0.29 S unction Power M TDescripptionWMOSTM F2 is Wa 2nd generation super ayons junction MOSFET fam with fa body di F2 M mily ast iode. S series pro all benefits of a fast switching ovide b f sD S D G GG S D G SJ-MOSFE while of an extr

WML1 MM15N65C15N65C2, WMK15N65C2, WM C2 WMN15N65C2, WMP15N65C2, WM C2 MO15N65C 650V n Power MOSFETV 0.32 Super JunctionDescripptionWMOSTM C2 is Wa 2nd generation super ayons n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance echnology fo y low on-reD S D G GG S D G and low ga charge performanc WMOSTM C2

650V 15A Trench and Field Stop IGBTJJT15N65SSKey performance: V =650VCETO-220F I =15A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance. 10s short circuit capability.GCE Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

650V 15A Trench and Field Stop IGBTJJT15N65SGKey performance:TO-220A V =650VCE I =15A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant

650V 15A Trench and Field Stop IGBTJJT15N65SCKey performance:TO-263 V =650VCE I =15A@T =100C C V =1.6 VCE(sat)CFeatures:G High ruggedness performance.E 10s short circuit capability. Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

650V 15A Trench and Field Stop IGBTJJT15N65SYKey performance:TO-220 V =650VCE I =15A@T =100C C V =1.6 VCE(sat)Features: High ruggedness performance.GC 10s short circuit capability.E Positive V temperature coefficient.CE (sat) High efficiency for motor control. Excellent current sharing in parallel operation. RoHS compliant.

SPF15N65T1T1TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat

SPD15N65T1T0TL650V /15A Trench Field Stop IGBT V 650 V CEFeatures I 15 A C Max Junction Temperature 150C High breakdown voltage up to 650V forV I =15A 1.65 V CE(SAT) Cimproved reliability Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching appli

SPF15N65T1T2TL650V /15A Trench Field Stop IGBT Features V 650 V CE Max Junction Temperature 150C High breakdown voltage up to 650V for I 15 A Cimproved reliabilityV I =15A 1.65 V CE(SAT) C Short Circuit Rated Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching applicat

DGW15N65CTL RoHS COMPLIANT IGBT Descrete V 650 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, temp

RoHS DGP15N65CTL COMPLIANT IGBT Descrete V 650 V CEI 15 A CV I = A 1.65 V CE(SAT) C 15 Applications Circuit Soft switchingapplications Airconditioning Motor driveinverter Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Positive temperature coefficient High ruggedness, te

HMS15N65AN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 1 AAC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features

HMS15N65I / HMS15N65KN-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial

HMS15N65D, HMS15N65, HMS15N65FN-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction VDS 650 V technology and design to provide excellent RDS(ON) with low RDS(ON) MAX 260 m gate charge. This super junction MOSFET fits the industrys ID 15 A AC-DC SMPS requirements for PFC, AC/DC powerconversion, and industrial power ap

MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N

SPD15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

SPT15N65T1650V /15A Trench Field Stop IGBT Features Max Junction Temperature 150CV 650 V CE High breakdown voltage up to 650V forimproved reliabilityI 15 A C Short Circuit RatedV I =15A 1.65 V CE(SAT) C Very Low Saturation Voltage:V = 1.65V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications Soft switching application

YGF15N65T2 YGK15N65T2 YGP15N65T2 650V /15A Trench Field Stop IGBT Features Max Junction Temperature 175C V 650 V CE High breakdown voltage up to 650V for improved reliability I 15 A C Short Circuit Rated V I =15A 1.50 V CE(SAT) C Very Low Saturation Voltage: V = 1.50V (Typ.) @ I = 15A CE(SAT) C Soft current turn-off waveforms Applications

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPA15N65C3FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET