All MOSFET. 15N65 Datasheet

 

15N65 MOSFET. Datasheet pdf. Equivalent

Type Designator: 15N65

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 312 W

Maximum Drain-Source Voltage |Vds|: 650 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 125 nS

Drain-Source Capacitance (Cd): 295 pF

Maximum Drain-Source On-State Resistance (Rds): 0.5 Ohm

Package: TO-247_TO-220F_TO-220F2

15N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

15N65 Datasheet (PDF)

1.1. sihb15n65e.pdf Size:206K _upd-mosfet

15N65
15N65

SiHB15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (UIS) Qgd (nC) 21 •

1.2. sihf15n65e.pdf Size:160K _upd-mosfet

15N65
15N65

SiHF15N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Available • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.28 • Reduced switching and conduction losses Available Qg max. (nC) 96 • Ultra low gate charge (Qg) Qgs (nC) 11 • Avalanche energy rated (U

 1.3. fdp15n65 fdpf15n65ydtu.pdf Size:457K _upd-mosfet

15N65
15N65

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description • 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( typical 48.5 nC) stripe, DMOS technology. • Low Crss ( typical 23.6 pF) This advanced technology has been especia

1.4. stb15n65.pdf Size:87K _st

15N65
15N65

STB15N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STB15N25 250 V < 0.25 ? 15 A TYPICAL R = 0.2 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE LOW GATE CHARGE 3 3 2 LOW LEAKAGE CURRENT 1 1 APPLICATION ORIENTED CHARACTERIZATION I2PAK D2PAK THROUGH-HOLE

 1.5. fdp15n65 fdpf15n65.pdf Size:490K _fairchild_semi

15N65
15N65

April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especially tailored

1.6. fda15n65.pdf Size:876K _fairchild_semi

15N65
15N65

January 2007 TM UniFET FDA15N65 650V N-Channel MOSFET Features Description 16A, 650V, RDS(on) = 0.44? @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especially tailored to Fa

1.7. spi15n65c3 rev 2 0.pdf Size:558K _infineon

15N65
15N65

SPI15N65C3 C??IMOSTM $;B1= '=-:>5>?;= $=;0@/? &@99-=D Features 650 V DS R 'AH 93E7 5:3C97 0.28 W DS(on) max R IEC7?7 6G 6E C3E76 6 nC g typ R #;9: B73= 5FCC7@E 53B34;>;EJ R , F3>;8;76 for industrial grade applications 355AC6;@9 EA % R +4 8C77 >736 B>3E;@9 - A#. 5A?B>;3@E; Halogen free mold compound TO?262? ?1 ;;8!#& 01>53:10 2;= R ) AE74AA= 63BE7C Type Package Marking SPI15

1.8. spp15n65c3 rev 2 0.pdf Size:253K _infineon

15N65
15N65

SPP15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 ? DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-1 CoolMOS C3 designed for: Notebook Adapter Type Package Marking SPP15N65C3 PG-TO220-3 15N65

1.9. spa15n65c3 rev2.0.pdf Size:277K _infineon

15N65
15N65

SPA15N65C3 CoolMOSTM Power Transistor Product Summary Features V 650 V DS Low gate charge R 0.28 ? DS(on),max Extreme dv/dt rated Q 63 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO220-3-31 Type Package Marking SPA15N65C3 PG-TO220-3-31 15N65C3 Maximum ratings, at T =25 C, unless o

1.10. 15n65.pdf Size:230K _utc

15N65
15N65

UNISONIC TECHNOLOGIES CO., LTD 15N65 Power MOSFET 15A, 650V N-CHANNEL POWER MOSFET ? DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energ

1.11. ixyp15n65c3.pdf Size:190K _igbt_a

15N65
15N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3 GenX3TM IC110 = 15A   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR TJ = 25°C to 175°C, RGE = 1M 650 V G C Tab

1.12. ika15n65h5.pdf Size:2449K _igbt_a

15N65
15N65

IGBT High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKA15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diod

1.13. ika15n65f5.pdf Size:2448K _igbt_a

15N65
15N65

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKA15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKA15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti par

1.14. ixyp15n65c3d1.pdf Size:222K _igbt_a

15N65
15N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25°C to 175°C 650 V VCGR

1.15. ixya15n65c3d1.pdf Size:222K _igbt_a

15N65
15N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYA15N65C3D1 GenX3TM w/Diode IC110 = 15A IXYP15N65C3D1   VCE(sat)    2.5V     tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching TO-263 AA (IXYA) G Symbol Test Conditions Maximum Ratings E C (Tab) VCES TJ = 25°C to 175°C 650 V VCGR

1.16. ikp15n65f5.pdf Size:2447K _igbt_a

15N65
15N65

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti parallel diode IKP15N65F5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65F5 High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft anti par

1.17. ikp15n65h5.pdf Size:2448K _igbt_a

15N65
15N65

IGBT High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft anti parallel diode IKP15N65H5 650V DuoPack IGBT and Diode High speed switching series fifth generation Data sheet Industrial Power Control IKP15N65H5 High speed switching series fifth generation High speed 5 IGBT in TRENCHSTOPTM technology copacked with RAPID 1 fast and soft anti parallel diode C

1.18. ixyp15n65c3d1m.pdf Size:195K _igbt_a

15N65
15N65

Preliminary Technical Information XPTTM 650V IGBT VCES = 650V IXYP15N65C3D1M GenX3TM w/Diode IC110 = 9A   VCE(sat)    2.5V     (Electrically Isolated Tab) tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching OVERMOLDED TO-220 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 175°C 650 V VCGR

1.19. brf15n65.pdf Size:1106K _blue-rocket-elect

15N65
15N65

BRF15N65(BRCS15N65FL) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-220FL 塑封封装 N 沟道 MOS 场效应管。N-CHANNEL MOSFET in a TO-220FL Plastic Package. 特征 / Features 低栅极电荷,低 Crss,快速开关,100%的雪崩测试,改进 dv/dt 能力。 Low gate charge, Low Crss ,Fast switching,100% avalanche tested, Improved dv/dt capability. 用途 / Appl

Datasheet: 7N65 , 7N65Z , 7N65K , 8N65 , 9N65 , 10N65 , 10N65Z , 10N65K , IRF5210 , 18N65 , 20N65 , 22N65 , 1N65A , 1N65 , 2N65 , 2N65L , 2N65Z .

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